Enlightening gallium nitride-based UV photodetectors

Neha Aggarwal,Govind Gupta

DOI: https://doi.org/10.1039/d0tc03219k

IF: 6.4

2020-01-01

Journal of Materials Chemistry C

Abstract:This article highlights the emerging demand for gallium nitride (GaN) semiconductor technology that offers superior optoelectronic properties making it suitable for futuristic ultraviolet (UV) photodetection applications.

materials science, multidisciplinary,physics, applied

What problem does this paper attempt to address?

Gallium Nitride –Based Photodiode: A review

Haneen D. Jabbar,Makram A. Fakhri,Mohammed Jalal AbdulRazzaq

DOI: https://doi.org/10.1016/j.matpr.2020.12.729

2021-01-01

Materials Today: Proceedings

Abstract:This paper shows Gallium Nitride material based photodiode as an overview to use it with different layer thickness in order to detect multi-spectral ranges and to obtain high performance, high responsivity, high speed and low cost optoelectronic devices. The earlier published works are summarized as well as the Gallium Nitride material grown on different substrates materials as silicon, or sapphire or quartz using different growth methods to fabricate photodiodes used in wide application field and get attractive attention to civil and military industries to detect missile plumes, flame sensors, engine control, solar UV monitoring, source calibration, UV astronomy, and secure space-to-space communications. GaN material based photodiodes are consider to be promising to open a new generation fields to their virtues to design high temperature, high frequency and high power optoelectronic devices.
Current advances in solar-blind photodetection technology: using Ga 2 O 3 and AlGaN

Urvashi Varshney,Neha Aggarwal,Govind Gupta

DOI: https://doi.org/10.1039/d1tc05101f

IF: 6.4

2022-01-01

Journal of Materials Chemistry C

Abstract:Recent advancements and applications of solar-blind ultraviolet photodetectors utilizing Ga 2 O 3 and AlGaN materials.

materials science, multidisciplinary,physics, applied
Enhanced Performance of a Graphene/gaas Self-Driven Near-Infrared Photodetector with Upconversion Nanoparticles.

Jianghong Wu,Zhenwei Yang,Caiyu Qiu,Yuejiao Zhang,Zhiqian Wu,Jingliang Yang,Yanghua Lu,Jianfeng Li,Dongxiao Yang,Ran Hao,Erping Li,Geliang Yu,Shisheng Lin

DOI: https://doi.org/10.1039/c8nr00594j

IF: 6.7

2018-01-01

Nanoscale

Abstract:Near-infrared photodetectors (NIRPDs) have attracted great attention because of their wide range of applications in many fields. Herein, a novel self-driven NIRPD at the wavelength of 980 nm is reported based on the graphene/GaAs heterostructure. Extraordinarily, its sensitivity to light illumination (980 nm) is far beyond the absorption limitation of GaAs (874 nm). This means that the photocurrent originates from the separation of photo-induced carriers in graphene, which is caused by the vertically built-in electric field formed through the high quality van der Waals contact between graphene and GaAs. Moreover, after introducing NaYF4:Yb3+/Er3+ upconversion nanoparticles (UCNPs) onto the graphene/GaAs heterojunction, the responsivity increases to be as superior as 5.97 mA W-1 and the corresponding detectivity is 1.1 × 1011 cm Hz0.5 W-1 under self-driven conditions. This dramatic improvement is mainly ascribed to the radiative energy transfer from UCNPs to the graphene/GaAs heterostructure. The high-quality and self-driven UCNPs/graphene/GaAs heterostructure NIRPD holds significant potential for practical application in low-consumption and large-scale optoelectronic devices.
Recent advances and prospects for GaN-based hybrid type ultraviolet photodetector

Jiaxin Zhang,Liqiong Deng,Shihong Xia,Chenyu Guo,Kunzi Liu,Li Chen,Wei Liu,Hui Xiao,Zhenhai Yang,Wei Guo,Jichun Ye

DOI: https://doi.org/10.1088/1361-6641/ad5100

IF: 2.048

2024-05-29

Semiconductor Science and Technology

Abstract:Solid-state UV photodetectors (PD) have received numerous attention because of the advantages of small size, absence of external cooling, high selectivity, and the ability to utilize the energy band structure semiconductor materials to achieve detection across various wavelengths. III-nitride thin films, as typical wide bandgap semiconductors with mature n-type and p-type doping capabilities, are ideal candidates for solid-state UV-PDs. However, a combination between III-nitride and other wide bandgap materials can either enrich the functionality of such devices such as spectrum-selective and broadband UV detection, or offers opportunities to enhance device performance, including high photoresponsivity, high external quantum efficiency, low dark current and fast response time. This topical review focuses on giving a thorough review of the III-nitride based hybrid-type UV photodetectors, their recent progress and future prospects. This review highlights different optical and electrical properties of various materials including GaN, Ga2O3, ZnO, perovskite etc. By carefully choosing the materials on two sides of the heterojunction and modulating the thickness and fermi levels and corresponding layers, p-i-n, Schottky, or MSM type photodetectors were successfully fabricated with outstanding device performances and novel spectral-selective properties. The advantages for future development of such hybrid-type PDs will be discussed, such as inherently formed p-n junction with large depletion region at the interface of two different materials, capability of bandgap engineering to tune the band offset of conduction band and valence band, thus enabling large barrier height for one type of carrier without influencing the other. The drawbacks in hybrid-type UV-PD due to poor interface quality and challenges in forming electrical contact in nanostructure hybrid UV-PD will also be discussed.

materials science, multidisciplinary,engineering, electrical & electronic,physics, condensed matter
Ga 2 O 3 /GaN Heterostructural Ultraviolet Photodetectors with Exciton-Dominated Ultranarrow Response

Ruifan Tang,Guanqi Li,Ying Jiang,Na Gao,Jinchai Li,Cheng Li,Kai Huang,Junyong Kang,Tao Wang,Rong Zhang

DOI: https://doi.org/10.1021/acsaelm.1c00917

IF: 4.494

2021-12-28

ACS Applied Electronic Materials

Abstract:Ultraviolet photodetectors have demonstrated a wide range of applications, e.g., missile launching, tracking detection, environmental monitoring, etc. This Article presents an ultraviolet photodetector based on a Ga2O3/GaN heterostructure that is equipped with tunable multiband detectivity via bias voltage and a record ultranarrow response. Particularly, this spectral response can be tuned from ultraviolet-C to ultraviolet-A by modulating the depletion region of the photodetector via adjusting bias. Under a higher bias, a photoresponse with a full-width at half-maximum of ∼4 nm at 363 nm is achieved. This ultranarrow response reaches 2.58 × 103 A/W and an external quantum efficiency of (8.84 × 105)% under 28 V bias. The photoluminescence, photoluminescence excitation, and light-absorption measurements suggest that this ultranarrow-band detectivity can be ascribed to the field-enhanced exciton ionization process in the GaN layer. The high responsivity can be attributed to the internal gain of the photodetector originating from the relatively large valence band offset between the Ga2O3 and GaN layers. This work provides a promising approach to the development of high-performance and versatile multiband ultraviolet photodetectors with electrical tunability. It is also worth highlighting that the features of inexpensive manufacturing and easy scalability are particularly attractive for mass production.

materials science, multidisciplinary,engineering, electrical & electronic
Nanoflowers like GaSe/β-Ga2O3 based heterostructure for highly efficient self-powered broadband photodetector

Urvashi Varshney,Anuj Sharma,Aditya Yadav,Preeti Goswami,Govind Gupta

DOI: https://doi.org/10.1039/d3tc04337a

IF: 6.4

2024-01-01

Journal of Materials Chemistry C

Abstract:The rising demand for missile warnings, fire alarms, and astronomical imaging applications makes gallium oxide a promising ultra-wide band gap semiconducting material. Integrating gallium oxide with suitable material can enhance...

materials science, multidisciplinary,physics, applied
Unleashing the potential of gallium oxide: A paradigm shift in optoelectronic applications for image sensing and neuromorphic computing applications

Naif H. Al-Hardan,Muhammad Azmi Abdul Hamid,Azman Jalar,Mohd Firdaus-Raih

DOI: https://doi.org/10.1016/j.mtphys.2023.101279

IF: 11.021

2023-11-10

Materials Today Physics

Abstract:Gallium oxide (Ga 2 O 3 ) is an ultrawide-bandgap semiconductor material that has gained attention in recent years owing to its potential applications in optoelectronic devices. Ga 2 O 3 has become a potential material for high-performance solar-blind ultraviolet (UV–C) photodetectors in the wavelength range of 200–280 nm. One of its emerging applications as a photodetector is as an image sensor. It has been used to create arrays of multiple photodetectors that can detect UV light through objects and produce an image based on the intensity of the detected transmitted UV light. The imaging process has found cutting-edge applications, such as missile detection, flame monitoring, and neuromorphic vision sensors that mimic the human vision system. Ga 2 O 3 photodetectors have several advantages that are useful for such applications. Among them, Ga 2 O 3 has high sensitivity to UV-C light, which allows for the detection of low levels of UV-C radiation. They also have a high signal-to-noise ratio, which is important for imaging applications in which the accurate detection of weak signals is critical. Furthermore, gallium oxide exhibits promising potential as a material for applications in the emergent field of neuromorphic computing. Due to its distinct properties, Ga 2 O 3 has been employed as an artificial synapse, and these devices are expected to be integrated into neuromorphic computing systems. Artificial synapses emulate the structure and function of the human brain and neural system. The functionality of these devices relies on two fundamental mechanisms, namely the resistive switching properties and the optoelectronic properties exhibited by the material. However, there are also challenges in using Ga 2 O 3 for photodetector arrays, including the need for high-quality material growth by minimizing the defects in the material. Additionally, this technology is still in the early stages of development, and further research is needed to improve device performance and reliability. This review article aims to provide an overview on the application of Ga 2 O 3 photodetector for imaging processes and its application in the field of neuromorphic computing.

materials science, multidisciplinary,physics, applied
Emerging gallium nitride based devices

S.N. Mohammad,A.A. Salvador,H. Morkoc

DOI: https://doi.org/10.1109/5.469300

IF: 20.6

1995-01-01

Proceedings of the IEEE

Abstract:Wide bandgap GaN has long been sought for its applications to blue and UV emitters and high temperature/high power electronic devices. Recent introduction of commercial blue and blue-green LED's have led to a plethora of activity in all three continents into the heterostructures based on GaN and its alloys with AlN and InN. In this review, the status and future prospects of emerging wide bandgap gallium nitride semiconductor devices are discussed. Recent successes in p-doping of GaN and its alloys with InN and AlN, and in n-doping with much reduced background concentrations have paved the way for the design, fabrication, and characterization of devices such as MESFET's, MISFET's, HBT's, LED's, and optically pumped lasers. We discuss the electrical properties of these devices and their drawbacks followed by future prospects. After a short elucidation of materials characteristics of the nitrides, we explore their electrical transport properties in detail. Recent progress in processing such as formation of low-resistance ohmic contacts and etching is also presented. The promising features of quarternaries and double heterostructures in relation to possible current injection lasers, LED's, and photodetectors are also elaborated on.<>

engineering, electrical & electronic
Gallium Oxide-Based Solar-Blind Ultraviolet Photodetectors

Xuanhu Chen,Fang-Fang Ren,Jiandong Ye,Shulin Gu

DOI: https://doi.org/10.1088/1361-6641/ab6102

IF: 2.048

2020-01-01

Semiconductor Science and Technology

Abstract:Gallium oxide (Ga2O3) is an emerging ultrawide bandgap (UWBG) semiconducting material as a key building block for the applications of power electronics, solar blind photodetectors and deep ultraviolet optoelectronics beyond existing technologies. To date, solar-blind photodetectors based on Ga2O3 in the various forms of bulk crystals, epitaxial thin films, nanostructures, and heterostructures have been demonstrated with either high performance or multiple functionalities, however, several remaining challenges require proper solutions for practical applications. In this topic review, we summarized recent advances in processing and device performance of solar photodetectors based on Ga2O3 and the associated physical mechanisms behind according to the architecture of photodetectors. The feasibility of p-type doping, the defect behavior, and radiation effects on the device performance have been discussed. The demonstration of novel and advanced architectures such as phototransistors, highly narrow-band photodetectors, photodetector arrays, and integrated NEMS resonance oscillators for real-time ultraviolet light detection are included. This review may provide better understanding on the optoelectronics properties of the Ga2O3 emerging material to fully exploit its promising optoelectronic applications in deep ultraviolet spectral region.
Non-Polar Gallium Nitride for Photodetection Applications: A Systematic Review

Omar Al-Zuhairi,Ahmad Shuhaimi,Nafarizal Nayan,Adreen Azman,Anas Kamarudzaman,Omar Alobaidi,Mustafa Ghanim,Estabraq T. Abdullah,Yong Zhu

DOI: https://doi.org/10.3390/coatings12020275

IF: 3.236

2022-02-18

Coatings

Abstract:Ultraviolet photodetectors have been widely utilized in several applications, such as advanced communication, ozone sensing, air purification, flame detection, etc. Gallium nitride and its compound semiconductors have been promising candidates in photodetection applications. Unlike polar gallium nitride-based optoelectronics, non-polar gallium nitride-based optoelectronics have gained huge attention due to the piezoelectric and spontaneous polarization effect–induced quantum confined-stark effect being eliminated. In turn, non-polar gallium nitride-based photodetectors portray higher efficiency and faster response compared to the polar growth direction. To date, however, a systematic literature review of non-polar gallium nitride-based photodetectors has yet to be demonstrated. Hence, the objective of this systematic literature review is to critically analyze the data related to non-polar gallium nitride-based photodetectors. Based on the pool of literature, three categories are introduced, namely, growth and fabrication, electrical properties, and structural, morphological, and optical properties. In addition, bibliometric analysis, a precise open-source tool, was used to conduct a comprehensive science mapping analysis of non-polar gallium nitride-based photodetectors. Finally, challenges, motivations, and future opportunities of non-polar gallium nitride-based photodetectors are presented. The future opportunities of non-polar GaN-based photodetectors in terms of growth conditions, fabrication, and characterization are also presented. This systematic literature review can provide initial reading material for researchers and industries working on non-polar gallium nitride-based photodetectors.

materials science, multidisciplinary,physics, applied, coatings & films
High responsivity, low dark current ultraviolet photodetector based on AlGaN/GaN interdigitated transducer

Peter F. Satterthwaite,Ananth Saran Yalamarthy,Noah A. Scandrette,A. K. M. Newaz,Debbie G. Senesky

DOI: https://doi.org/10.48550/arXiv.1808.05723

2018-08-17

Abstract:An ultraviolet (UV) photodetector employing the two-dimensional electron gas (2DEG) formed at the AlGaN/GaN interface as an interdigitated transducer (IDT) is characterized under optical stimulus. The 2DEG-IDT photodetector exhibits a record high normalized photocurrent-to-dark current ratio (NPDR, $6\times10^{14}$). In addition, we observe a high responsivity ($7,800$ A/W) and ultraviolet-visible rejection-ratio ($10^{6}$), among the highest reported values for any GaN photodetector architecture. We propose a gain mechanism to explain the high responsivity of this device architecture, which corresponds to an internal gain of $26,000$. We argue that the valence band offset in the AlGaN/GaN heterostructure is essential in achieving this high responsivity, allowing for large gains without necessitating the presence of trap states, in contrast to common metal-semiconductor-metal (MSM) photodetector architectures. Our proposed gain mechanism is consistent with measurements of the scaling of gain with device channel width and incident power. In addition to high performance, this photodetector architecture has a simple two-step fabrication flow that is monolithically compatible with AlGaN/GaN high electron mobility transistor (HEMT) processing. This unique combination of low dark current, high responsivity and compatibility with HEMT processing is attractive for a variety of UV sensing applications.

Applied Physics
A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

Damanpreet Kaur,Mukesh Kumar

DOI: https://doi.org/10.1002/adom.202002160

IF: 9

2021-03-03

Advanced Optical Materials

Abstract:<p>With the use of UV‐C radiation sterilizers on the rise in the wake of the recent pandemic, it has become imperative to have health safety systems in place to curb the ill‐effects on humans. This requires detection systems with suitable spectral response to the "invisible to the naked eye" radiation leaks with utmost sensitivity and swiftness. State of the art deep‐UV photodetectors based on the wide bandgap material gallium oxide have achieved responsivities up to few hundred A W<sup>−1</sup> while the minimum response time achieved is few hundred nanoseconds. However, due to the trade‐off between these two key parameters, the ultimate performance of the photodetectors remains inadequate. The focus here is to give a thorough review of the gallium oxide based photodetectors, their recent progress and future prospects. This review highlights the fundamental physics and the key parameters such as dark current, responsivity, and response time with their dependence on the material properties. Exploration of the reasons behind current scenario in the field of gallium oxide is comprehensively and critically analyzed. The key challenges which limit device performance and inhibit the realization of real‐world practical detectors are also described. The lacunae currently plaguing the field is also discussed with possible remedial solutions.</p>

materials science, multidisciplinary,optics
Magnesium ion-implantation-based gallium nitride p-i-n photodiode for visible-blind ultraviolet detection

Weizong Xu,Yating Shi,Fangfang Ren,Dong Zhou,Linlin Su,Qing Liu,Liang Cheng,Jiandong Ye,Dunjun Chen,Rong Zhang,Youdou Zheng,Hai Lu

DOI: https://doi.org/10.1364/PRJ.7.000B48

IF: 7.6

2019-01-01

Photonics Research

Abstract:In this work, a GaN p-i-n diode based on Mg ion implantation for visible-blind UV detection is demonstrated. With an optimized implantation and annealing process, a p-GaN layer and corresponding GaN p-i-n photodiode are achieved via Mg implantation. As revealed in the UV detection characterizations, these diodes exhibit a sharp wavelength cutoff at 365 nm, high UV/visible rejection ratio of 1.2 x 10(4), and high photoresponsivity of 0.35 A/W, and are proved to be comparable with commercially available GaN p-n photodiodes. Additionally, a localized states-related gain mechanism is systematically investigated, and a relevant physics model of electric-field-assisted photocarrier hopping is proposed. The demonstrated Mg ion-implantation-based approach is believed to be an applicable and CMOS-process-compatible technology for GaN-based p-i-n photodiodes. (C) 2019 Chinese Laser Press
Super-high responsivity and harsh environment-resistant ultraviolet photodetector enabled by Ta2NiSe5/GaN van der Waals heterojunction

Jianpeng Lei,Tao Zheng,Wanglong Wu,Zhaoqiang Zheng,Quansheng Zheng,Xiaozhou Wang,Wenbo Xiao,Jingbo Li,Mengmeng Yang

DOI: https://doi.org/10.1007/s40843-023-2736-6

2024-02-01

Science China Materials

Abstract:Gallium nitride (GaN) has garnered significant research interest for ultraviolet (UV) photodetectors due to its direct bandgap, inherent UV absorption window, and high breakdown voltage. In this work, a new ternary chalcogenides Ta 2 NiSe 5 with high mobility is successfully stacked with unintentionally-doped GaN to creat an integrated mixed-dimensional Ta 2 NiSe 5 /GaN (2D/3D) van der Waals heterojunction with a typical type-I band alignment. The resulting Ta 2 NiSe 5 /GaN heterojunction exhibits excellent UV detection performance, with a pronounced light on/off ratio of 10 7 and a large responsivity of 1.22 × 10 4 A W −1 . Moreover, it demonstrates an enhanced detectivity up to 1.3 × 10 16 Jones under 365-nm light illumination at a bias of 4 V. The photodetector also exhibits a fast response speed of 1.22/3.16 ms. Remarkably, the device showcases exceptional stability, repeatability, and tolerance to harsh environmental conditions, including high temperature and acidic condition. Furthermore, leveraging the high responsivity, detectivity, and light on/off ratio of the photodetector, we successfully integrate this heterojunction device into UV optical communication, high-lighting its potential in information transmission.

materials science, multidisciplinary
Ultraviolet Optoelectronic Devices Based on AlGaN-SiC Platform: Towards Monolithic Photonics Integration System

Chen Huang,Haochen Zhang,Haiding Sun

DOI: https://doi.org/10.1016/j.nanoen.2020.105149

IF: 17.6

2020-01-01

Nano Energy

Abstract:Rapid advancement of wide-bandgap AlGaN semiconductor materials offers tremendous opportunities in the field of ultraviolet (UV) optoelectronics for a wide range of advanced applications. Additionally, SiC has large bandgap and excellent material properties, also making itself a suitable material for UV photodetection. More importantly, high-quality AlGaN alloys can be epitaxially grown on SiC substrates because of the very small lattice mismatch between them (less than 1%), which enables a possible monolithic integration of those two materials and allows us to take advantage of their material and physical properties to realize high-performance UV optoelectronics and eventually the integrated UV photonics systems. Herein, we review the recent progress in the development of UV optoelectronics based on AlGaN-SiC platform, mainly focusing on: (1) the growth strategies and material characterizations of AlGaN epilayers on SiC; (2) the fabrication and performance evaluation of UV optoelectronic devices built on the platform, including UV LEDs/lasers and UV photodetectors. Thereafter, we briefly discuss the initial efforts in the pursuit of monolithic integration of those UV optoelectronic devices. Finally, the challenges and potential advances associated with individual UV optoelectronic components as well as UV integrated photonics system on the prosperous AlGaN-SiC platform are outlined, providing insights and perspectives for possible deviceand system-level innovation in future.
Ultrasensitive self-powered large area planar GaN UV-photodetector using reduced graphene oxide electrodes

Nisha Prakash,Manjri Singh,Gaurav Kumar,Arun Barvat,Kritika Anand,Prabir Pal,Surinder P. Singh,Suraj P. Khanna

DOI: https://doi.org/10.1063/1.4971982

IF: 4

2016-12-12

Applied Physics Letters

Abstract:A simplistic design of a self-powered UV-photodetector device based on hybrid reduced-graphene-oxide (r-GO)/gallium nitride (GaN) is demonstrated. Under zero bias, the fabricated hybrid photodetector shows a photosensivity of ∼85% while the ohmic contact GaN photodetector with an identical device structure exhibits only ∼5.3% photosensivity at 350 nm illumination (18 μW/cm2). The responsivity and detectivity of the hybrid device were found to be 1.54 mA/W and 1.45 × 1010 Jones (cm Hz½ W−1), respectively, at zero bias with fast response (60 ms), recovery time (267 ms), and excellent repeatability. Power density-dependent responsivity and detectivity revealed ultrasensitive behaviour under low light conditions. The source of the observed self-powered effect in the hybrid photodetector is attributed to the depletion region formed at the r-GO and GaN quasi-ohmic interface.

physics, applied
Ultralow Dark-Current and Superhigh Detectivity Ultraviolet Photodetector Based on Freestanding GaN Nanobelt Array

Yuqing Yang,Jianqi Dong,Qiao Wang,Yicheng Xie,Shishi Liu,Wei Zhao,Zhitao Chen,Shuti Li,Shuanghong Wu,Chenguang He,Kang Zhang,Xingfu Wang

DOI: https://doi.org/10.1021/acsaelm.2c01086

IF: 4.494

2022-11-08

ACS Applied Electronic Materials

Abstract:One-dimensional (1D) GaN nanostructures have attracted increasing attention due to their unique optical absorption and electrical transport characteristics. Herein, we demonstrate the preparation of a single-crystalline GaN nanobelt (NB) array with remarkable optical and carrier confinement property by combining top-down etching and epitaxial lift-off techniques. The peeled-off NB demonstrated lower nonradiative recombination and higher radiative recombination probability, which indicated the lees defects in the peeled-off NB. Based on the obtained high-quality GaN NB array, high performance ultraviolet photodetectors (UV PDs) with Ohmic contacts were fabricated. Under a low bias of 1.0 V, the representative PD shows a high responsivity >500 A W–1, a high detectivity of 3.08 × 1016 Jones, and a fast response time at 325 nm. In particular, the PD exhibits extremely high light on/off ratio >108. To our best knowledge, the obtained on/off ratio is the best result for 1D GaN based UV PDs, which is ascribed to the ultralow dark current caused by strong surface depletion of the released GaN NBs. This work provides a route for GaN NB preparation and transfer, which is conducive to develop functional devices such as GaN heterogeneous integrated devices and flexible devices.

materials science, multidisciplinary,engineering, electrical & electronic
High Quality MBE-grown GaN P-N Nanowires and Their Carrier Transport Control for Photoelectrochemical Ultraviolet Photodetection

Shi Fang,Danhao Wang,Haiding Sun

DOI: https://doi.org/10.1117/12.2605967

2022-01-01

Abstract:The single-crystalline GaN nanowires play crucial roles in the pursuit of modern nanophotonic and nanoelectronic devices. Here, a photoelectrochemical-type ultraviolet photodetector consisting of GaN p-n junction nanowires as photoelectrodes is constructed. It is found that two competing charge transport processes co-determine the photoresponsive behavior of the device. Furthermore, the surface platinum (Pt) decoration has successfully tuned the charge transfer dynamics by enhancing the charge transport efficiency of the one process at the surface, resulting in a twenty-fold increase of the photocurrent. Theoretical calculations reveal that the high photoresponse benefits from the newly formed electronic states at the Pt/GaN interface and the optimized hydrogen adsorption energy.
High-Performance Self-Powered Ultraviolet Photodetector Based On Nano-Porous Gan And Copc P-N Vertical Heterojunction

Yan Xiao,Lin Liu,Zhi-Hao Ma,Bo Meng,Su-Jie Qin,Ge-Bo Pan

DOI: https://doi.org/10.3390/nano9091198

IF: 5.3

2019-01-01

Nanomaterials

Abstract:Gallium nitride (GaN) is a superior candidate material for fabricating ultraviolet (UV) photodetectors (PDs) by taking advantage of its attractive wide bandgap (3.4 eV) and stable chemical and physical properties. However, the performance of available GaN-based UV PDs (e.g., in terms of detectivity and sensitivity) still require improvement. Fabricating nanoporous GaN (porous-GaN) structures and constructing organic/inorganic hybrids are two effective ways to improve the performance of PDs. In this study, a novel self-powered UV PD was developed by using p-type cobalt phthalocyanine (CoPc) and n-type porous-GaN (CoPc/porous-GaN) to construct a p-n vertical heterojunction via a thermal vapor deposition method. Under 365 nm 0.009 mWcm(-2) light illumination, our device showed a photoresponsivity of 588 mA/W, a detectivity of 4.8 x 10(12) Jones, and a linear dynamic range of 79.5 dB, which are better than CoPc- and flat-GaN (CoPc/flat-GaN)-based PDs. The high performance was mainly attributed to the built-in electric field (BEF) generated at the interface of the CoPc film and the nanoporous-GaN, as well as the nanoporous structure of GaN, which allows for a higher absorptivity of light. Furthermore, the device showed excellent stability, as its photoelectrical property and on/off switching behavior remained the same, even after 3 months.
Vertically Aligned GaN Nanorod Arrays/p-Si Heterojunction Self-Powered UV Photodetector with Ultrahigh Photoresponsivity.

Yulin Zheng,Xin Tang,Yuhui Yang,Wenliang Wang,Guoqiang Li

DOI: https://doi.org/10.1364/ol.402454

2020-01-01

Abstract:Self-powered photodetectors have demonstrated potential for developing future wireless and implantable devices. Herein, we present a self-powered UV photodetector with an ultrahigh photoresponse based on vertically oriented and high crystalline quality n-type GaN nanorod arrays: poly(methyl methacrylate)/p-Si heterojunction. Benefiting from the highly efficient separation and transport of photoexcited electron-hole pairs, significant improvements in photoresponsivity are experimentally obtained. In a zero-biased self-powered detection mode, a 6.7AW-1 responsivity and 2.68×1013 Jones detectivity are achieved under 355 nm light illumination, and the response time is as low as 0.29/3.07 ms (rise/fall times).

Enlightening gallium nitride-based UV photodetectors

Gallium Nitride –Based Photodiode: A review

Current advances in solar-blind photodetection technology: using Ga 2 O 3 and AlGaN

Enhanced Performance of a Graphene/gaas Self-Driven Near-Infrared Photodetector with Upconversion Nanoparticles.

Recent advances and prospects for GaN-based hybrid type ultraviolet photodetector

Ga 2 O 3 /GaN Heterostructural Ultraviolet Photodetectors with Exciton-Dominated Ultranarrow Response

Nanoflowers like GaSe/β-Ga2O3 based heterostructure for highly efficient self-powered broadband photodetector

Unleashing the potential of gallium oxide: A paradigm shift in optoelectronic applications for image sensing and neuromorphic computing applications

Emerging gallium nitride based devices

Gallium Oxide-Based Solar-Blind Ultraviolet Photodetectors

Non-Polar Gallium Nitride for Photodetection Applications: A Systematic Review

High responsivity, low dark current ultraviolet photodetector based on AlGaN/GaN interdigitated transducer

A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

Magnesium ion-implantation-based gallium nitride p-i-n photodiode for visible-blind ultraviolet detection

Super-high responsivity and harsh environment-resistant ultraviolet photodetector enabled by Ta2NiSe5/GaN van der Waals heterojunction

Ultraviolet Optoelectronic Devices Based on AlGaN-SiC Platform: Towards Monolithic Photonics Integration System

Ultrasensitive self-powered large area planar GaN UV-photodetector using reduced graphene oxide electrodes

Ultralow Dark-Current and Superhigh Detectivity Ultraviolet Photodetector Based on Freestanding GaN Nanobelt Array

High Quality MBE-grown GaN P-N Nanowires and Their Carrier Transport Control for Photoelectrochemical Ultraviolet Photodetection

High-Performance Self-Powered Ultraviolet Photodetector Based On Nano-Porous Gan And Copc P-N Vertical Heterojunction

Vertically Aligned GaN Nanorod Arrays/p-Si Heterojunction Self-Powered UV Photodetector with Ultrahigh Photoresponsivity.