Abstract:Higher large‐scale on‐chip integrated photodetector array on a Si wafer are proposed, which consist of 21×21 GaN p‐n homojunction active pixels. The GaN subunit has significant photovoltaic performance at 0 V, and GaN units have small relative deviations. The proof of concept for GaN imaging and communication capabilities has been completed. To realize the advantageous combination of microelectronic integrated circuit technology and photonic technology, the development of high‐speed, low‐power, and chip‐integrated photodetection devices is extremely critical. Here, a large‐scale on‐chip integration photodetector array on a Si wafer consisting of 21×21 GaN p‐n homojunction pixels is prepared. The GaN homojunction subunit has significant photovoltaic performance at a bias voltage of 0 V, including high responsivity of 229.5 mA W−1, outstanding specific detectivity of 2.46×1013 Jones (360 nm, 45.7 μW cm−2), and fast response speed of 240/290 μs. Especially, external quantum efficiency can reach 94% in the faint UV illumination at 0 V bias. The excellent photoresponse is confirmed by finite element analysis, which is resulted from an oversized built‐in potential at the p‐n homojunction interface. For exploring potential practical applicability of the device, the full range of active pixels is statistically analyzed. It is confirmed that the small relative deviation of the GaN array is extremely favorable for obtaining high‐resolution imaging capability. Moreover, the prepared device can be used as an optical data receiver for UV optical communication. With compatibility and integrability to Si‐based optoelectronics platforms, the devices are appealing for sensing, imaging and communications.

Magnesium ion-implantation-based gallium nitride p-i-n photodiode for visible-blind ultraviolet detection

Photoresponse Study of Visible Blind GaN/AlGaN P-I-n Ultraviolet Photodetector

Monolithic integration of ultraviolet light emitting diodes and photodetectors on a p-GaN/AlGaN/GaN/Si platform

Low temperature atomic layer deposition of GaO x N y thin film on III-GaN:Mg for UV photodetector

Integrated GaN Prism Array Self‐Powered Photodetector on Si for Ultraviolet Imaging and Communication

Three-dimensional metal–semiconductor–metal bipolar ultraviolet phototransistor based on GaN p - i - n epilayer

AlGaN-Based Ultraviolet PIN Photodetector Grown on Silicon Substrates Using SiN Nitridation Process and Step-Graded Buffers

Ga 2 O 3 /GaN Heterostructural Ultraviolet Photodetectors with Exciton-Dominated Ultranarrow Response

High-Performance Self-Driven Single GaN-Based p–i–n Homojunction One-Dimensional Microwire Ultraviolet Photodetectors

An Ultrahigh Responsivity Self-Powered Solar-Blind Photodetector Based on a Centimeter-Sized Β-Ga2o3/polyaniline Heterojunction.

A self-powered ultraviolet photodiode using an amorphous InGaZnO/p-silicon nanowire heterojunction

Inverted‐Structural Self‐Powered Gan/PZT/ITO UV Photodetector Enhanced by Ferroelectric Modulation

Ga2O3/GaN-Based Planar Heterojunction Phototransistor for Ultraviolet Photodetection

Gallium Oxide-Based Solar-Blind Ultraviolet Photodetectors

Self-powered, Ultrafast, Visible-Blind UV Detection and Optical Logical Operation Based on ZnO/GaN Nanoscale P-N Junctions.

A Fast Self‐Powered Solar‐Blind Ultraviolet Photodetector Realized by Ga2O3/GaN PIN Heterojunction with a Fully Depleted Active Region

Ultrafast Self-Powered Solar-Blind Ultraviolet Photodetector Based on Ga2O3 Microwire/GaN p-n Heterojunction Using a Single-Layer Graphene as Electrode

Metal–Semiconductor–Metal Photodetectors Based on β-MgGaO Thin Films

AlGaN-based metal–semiconductor–metal photodiodes fabricated with nonplanar structure geometry for ultraviolet light detection

High sensitivity wide-bandgap semiconductor ultraviolet photodetector

High‐performance fully‐transparent ultraviolet photodetector fabricated using GaN‐based Schottky barrier photodiode