High mobility cerium-doped indium oxide thin films prepared by reactive plasma deposition without oxygen

Yanping Zhang,Yu Gan,Tian Gan,Lili Wu,Jingquan Zhang,Xia Hao,Dewei Zhao

DOI: https://doi.org/10.1016/j.vacuum.2022.111512

IF: 4

2022-12-01

Vacuum

Abstract:Cerium-doped indium oxide thin films were prepared by reactive plasma deposition on ultra-white glass substrates in pure argon atmosphere at room temperature. To improve the properties, the films were post-annealed at 180 °C –280 °C with an oxygen-free atmosphere (vacuum and nitrogen) and with air atmosphere as reference. The as-deposited ICO films were amorphous and transformed to polycrystalline state after annealing treatment. And the mobility increases from 42 cm2 V−1s−1 to 93 cm2 V−1s−1. The change in mobility is analytically attributed to the filling of oxygen vacancies and the reduction of ionized impurity scattering. After annealing, the average transmittance of the films is increased to 89% in the visible band (380 nm –780 nm) and maintains above 85% in the near-infrared band (780 nm –1200 nm), indicating that post-annealing is an effective way to improve the optical and electronic properties of the films.

materials science, multidisciplinary,physics, applied