Elevated temperature tribological properties of a-C:Si films sputtered from SiC target in the presence of C2H2 gas

Linqing Wang,Hao Li,Chunlin Pu,Li Wang,Junjun Wang
DOI: https://doi.org/10.1016/j.mtcomm.2024.108226
IF: 3.8
2024-03-01
Materials Today Communications
Abstract:The study investigated the tribological behavior of the a-C:Si films sputtered from SiC target in the presence of C2H2 gas at elevated temperatures. The results showed that the a-C:Si films exhibited excellent tribological property until 450 °C, with a friction coefficient (COF) below 0.09, and a low wear rate in the 10−7 mm3/N·m order of magnitude. The friction mechanisms of the films varied depending on the test temperature. At temperatures below 200 °C, the films show low COF and excellent anti-wear performance due to their unique composite structure of thin films, which had weak interactions with Al2O3 ball. At 300 °C, the films showed good tribological properties attributed to the formation of transfer layer consisting of Si, C and O. This transfer layer contributed to reduce COF and wear rate. At temperatures of 400–450 °C, the dominant wear mechanism changed to oxidation wear, and the presence of SiO2 tribo-film resulted in low COF and wear rate.
materials science, multidisciplinary
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