Abstract:Mg 3 Sb 2 -based n-type materials are consisted of earth-abundant elements and possess comparable thermoelectric properties with n-type Bi 2 Te 3 at low temperatures, which make them promising candidates for cooling and power generation applications in terms of cost and performance. Substitution of Sb atom with chalcogen elements (Te, Se S) is a conventional method for n-type doping, but doping cations such as rare-earth elements and transition metals is also widely studied for its unique advantages. In this study, La and Mn were selected for co-doping of Mg3SbBi, and the thermoelectric performances of the doped materials were investigated. Mg 3 La 0.005 Mn x SbBi (0  x  0.015) polycrystalline samples were made by sintering the fine powders of the mother alloy after arc melting, in which elemental Mn and LaSb compound were included for n-type dual doping. Considering the loss of Mg at elevated temperatures by vaporization, the molar ratio of Mg, Sb, and Bi in the mixture for arc melting was set to 4 : 1 : 1 with excess Mg. Analysis shows that all the samples are n-type, and the electrical conductivity of Mg 3 La 0.005 Mn 0.015 SbBi increased by 62% from the Mn-free Mg 3 La 0.005 SbBi at 298 K. In addition, the lattice thermal conductivity (  lat ) decreased with increasing Mn content in the measured temperature range of 298-623 K. The minimum value of  lat was about 0.60 W m -1 K -1 in Mg 3 La 0.005 Mn 0.015 SbBi at 523 K, which is about 19% smaller than that of the Mn-free sample. As a result of these enhancements in thermoelectric performance, the maximum figure of merit ( zT max ) of 1.12 was obtained in Mg 3 La 0.005 Mn 0.01 SbBi and Mg 3 La 0.005 Mn 0.015 SbBi at 573 K, and the zT at 298 K increased by 73% to 0.35 in Mg 3 La 0.005 Mn 0.015 SbBi compared to Mn-free Mg 3 La 0.005 SbBi, which is beneficial to room-temperature applications.

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