Abstract:The availability of thin-film lithium niobate on insulator (LNOI) and advances in processing have led to the emergence of fully integrated LiNbO3 electro-optic devices, including low-voltage, high-speed modulators, electro-optic frequency combs, and microwave-optical transducers. Yet to date, LiNbO3 photonic integrated circuits (PICs) have mostly been fabricated using non-standard etching techniques that lack the reproducibility routinely achieved in silicon photonics. Widespread future application of thin-film LiNbO3 requires a reliable and scalable solution using standard processing and precise lithographic control. Here we demonstrate a heterogeneously integrated LiNbO3 photonic platform that overcomes the abovementioned challenges by employing wafer-scale bonding of thin-film LiNbO3 to planarized low-loss silicon nitride (Si3N4) photonic integrated circuits, a mature foundry-grade integrated photonic platform. The resulting devices combine the substantial Pockels effect of LiNbO3 with the scalability, high-yield, and complexity of the underlying Si3N4 PICs. Importantly, the platform maintains the low propagation loss (<0.1 dB/cm) and efficient fiber-to-chip coupling (<2.5 dB per facet) of the Si3N4 waveguides. We find that ten transitions between a mode confined in the Si3N4 PIC and the hybrid LiNbO$_3$ mode produce less than 0.8 dB additional loss, corresponding to a loss per transition not exceeding 0.1 dB. These nearly lossless adiabatic transitions thus link the low-loss passive Si3N4 photonic structures with electro-optic components. We demonstrate high-Q microresonators, optical splitters, electrically tunable photonic dimers, electro-optic frequency combs, and carrier-envelope phase detection of a femtosecond laser on the same platform, thus providing a reliable and foundry-ready solution to low-loss and complex LiNbO3 integrated photonic circuits.

A versatile, inexpensive integrated photonics platform

Integrated resonant electro-optic comb enabled by platform-agnostic laser integration

Extending the spectrum of fully integrated photonics

Photonic Integrated Circuits and Components Using Quantum Well Intermixing

Multi-Micron Silicon Photonics Platform for Highly Manufacturable and Versatile Photonic Integrated Circuits

Photonic-integrated circuits and components using quantum well intermixing

Ultra-wideband integrated photonic devices on silicon platform: from visible to mid-IR

Passive Devices at 2 Μm Wavelength on 200 Mm CMOS-compatible Silicon Photonics Platform [Invited]

Extending the spectrum of fully integrated photonics to submicrometre wavelengths

Heterogeneously integrated MIR silicon photonics

A heterogeneously integrated lithium niobate-on-silicon nitride photonic platform

Visible to Near-Infrared Light Integrated Photonic Components on PECVD and LPCVD SiN Platform

Monolithic back-end-of-line integration of phase change materials into foundry-manufactured silicon photonics

Hybrid integration of silicon photonic devices on lithium niobate for optomechanical wavelength conversion

Multi-material heterogeneous integration on a 3-D Photonic-CMOS platform

Photonic Damascene Process for Integrated High-Q Microresonator Based Nonlinear Photonics

A Monolithically-Integrated Chip-to-Chip Optical Link in Bulk CMOS

Wafer-Scale Demonstration of Low-Loss (~0.43 dB/cm), High-Bandwidth (> 38 GHz), Silicon Photonics Platform Operating at the C-Band

Innovative Integration of Dual Quantum Cascade Lasers on Silicon Photonics Platform

Heterogeneous Integration of Lithium Niobate and Silicon Nitride Waveguides for Wafer-Scale Photonic Integrated Circuits on Silicon.

300-Nm-thick, Ultralow-Loss Silicon Nitride Photonic Integrated Circuits by 8-In. Foundry Production