Abstract:Silicon Carbide (SiC) is renowned for its exceptional thermal stability, making it a crucial material for high-temperature power devices in extreme environments. While optically detected magnetic resonance (ODMR) in SiC has been widely studied for magnetometry, it requires complex setups involving optical and microwave sources. Similarly, electrically detected magnetic resonance (EDMR) in SiC, which relies on an electrical readout of spin resonance, has also been explored for magnetometry. However, both techniques require microwave excitation, which limits their scalability. In contrast, SiC's spin-dependent recombination (SDR) currents enable a purely electrical approach to magnetometry through the near zero-field magnetoresistance (NZFMR) effect, where the device resistance changes in response to small magnetic fields. Despite its potential, NZFMR remains underexplored for high-temperature applications. In this work, we demonstrate the use of NZFMR in SiC diodes for high-temperature magnetometry and achieve sensitive detection of weak magnetic fields at temperatures up to 500$^\circ$C . Our technology offers a simple and cost-effective alternative to other magnetometry architectures. The NZFMR signal is modulated by an external magnetic field, which alters the singlet-triplet pair ratio controlled by hyperfine interactions between nuclear and electron/hole spins as well as dipole-dipole/exchange interactions between electron and hole spins, providing a novel mechanism for magnetometry sensing at elevated temperatures. A critical advantage of our approach is its low power consumption -less than 0.5 W at 500$^\circ$C for magnetic fields below 5 Gauss. This approach provides a sensitive, reliable, and scalable solution with promising applications in space exploration, automotive systems, and industrial sectors, where high performance in extreme conditions is essential.

4H–SiC vertical magnetotransistor with microtesla detectivity up to 500 °C

Temperature Sensing Elements for Harsh Environments in a 4H-SiC CMOS Technology

All Electrical NZFMR Magnetometry up to 500$^\circ$C Using SiC Devices

An analog to digital converter in a SiC CMOS technology for high-temperature applications

High-Temperature Hall Effect Sensor Based on Epitaxial Graphene on High-Purity Semiinsulating 4H-SiC

High Temperature Characterization Of 4h-Sic Normally-On Vertical Jfets With Buried Gate And Buried Field Rings

Exploring the nonlinear piezoresistive effect of 4H-SiC and developing MEMS pressure sensors for extreme environments

Short-Circuit and Over-Current Fault Detection for SiC MOSFET Modules Based on Tunnel Magnetoresistance with Predictive Capabilities

High-Temperature Characterization of a 1.2-Kv SiC MOSFET Using Dynamic Short-Circuit Measurement Technique

Nonlinear piezoresistive effect of 4H–SiC for applications of high temperature pressure sensors

Integrated Lateral SBD Temperature Sensor of a 4H-Sic VDMOS for Real-Time Temperature Monitoring

Thermoresistance of P‐type 4h–sic Integrated MEMS Devices for High‐Temperature Sensing

Optical thermometry based on level anticrossing in silicon carbide

Comprehensive Characterization of the 4H-Sic Planar and Trench Gate MOSFETs from Cryogenic to High Temperature

Very High In‐Plane Magnetic Field Sensitivity in Ion‐Implanted 4H‐SiC PIN Diodes

Current Induced Non-Volatile Resistive Switching Effect in Silicon Devices with Large Magnetoresistance

High-precision and flexible magnetoelectric sensor operated at 25–330 °C

Unintentionally Doped Epitaxial 3C-SiC(111) Nanothin Film as Material for Highly Sensitive Thermal Sensors at High Temperatures

Static and Dynamic Characteristics of SiC MOSFET under Extremely High Temperature

Characteristics of AlGaN/GaN High Electron Mobility Transistor Temperature Sensor

Real-Time Measurement of Temperature Sensitive Electrical Parameters in SiC Power MOSFETs