Abstract:For more possibilities in exploring the spin–orbit (SO) control in two-dimensional (2D) semiconductor quantum wells, we resort to the laser field by constructing a generic model including both the axial and transverse field components relative to the well-growth direction, with the axial one primarily modifying the structural potential of the well and the transverse one mainly altering the electron density of states and so the Hartree potential. For GaInAs/AlInAs quantum wells with two-subband occupation, we obtain the full scenario of the laser-field response of the Rashba and Dresselhaus SO couplings, including both the intrasubband ( αν and βν with ν = 1,2 denoting the subband index) and intersubband ( η and Γ ) types, by solving the Poisson–Schrödinger equations. Remarkably, for the Dresselhaus coupling, which is insensitive to the electrical manipulation, we demonstrate that it can be substantially tuned by the laser field and unified SO control of different subbands is possible, suggesting that the optical manner is an effective supplement to the electrical means. Moreover, symmetric ( α1=−α2 ) and selective ( α1=0 , α2≠0 ) control of the Rashba coupling of different subbands are also observed with the interplay of the two laser components, which are desirable for the realization of skyrmion lattice and the suppression of spin relaxation of given subbands. Besides, for the intersubband coupling, the Rashba term η is optically tunable while the Dresselhaus term Γ is basically immune to the laser field, i.e., selective control of the intersubband coupling by virtue of optical means. These diverse laser-field-mediated SO features offer exciting possibilities in incorporating 2D quantum wells for new applications in the field of spintronics.

Gate-Controlled Electron Spin Resonance in a GaAs/AlGaAs Heterostructure

Gate voltage control over spin relaxation length

Electric field control of spin-orbit splittings in GaAs/AlGaAs coupled quantum wells

Direct Observation of Above-Quantum-step Quasibound States Ingaas/alx

Visualizing electrostatic gating effects in two-dimensional heterostructures

Gate-defined Quantum Devices Realized on an InGaAs/InP Heterostructure by Incorporating a High-Κ Dielectric Material

Spin-flip Raman scattering of the resident electron in singly charged (In,Ga)As/GaAs quantum dot ensembles

Electric field tunable exchange interaction in InAs/GaAs coupled quantum dots

Electrical Spin Injection into the 2D Electron Gas in AlN/GaN Heterostructures with Ultrathin AlN Tunnel Barrier

Metastable Excited States of a Closed Quantum Dot Probed by an Aluminum Single-Electron Transistor

Quantum steering of electron wave function in an InAs Y-branch switch

In-plane gate induced transition asymmetry of spin-resolved Landau levels in InAs-based quantum wells

Spin gap in the 2D electron system of GaAs/AlGaAs single heterojunctions in weak magnetic fields

Laser-field-mediated Rashba and Dresselhaus spin–orbit control in GaInAs/AlInAs quantum wells

Transport properties in a gated heterostructure with a trapezoidal AlxGa1-xAs barrier layer

Gate Voltage and Structure Parameter Modulated Spin Splitting in AlGaN/GaN Quantum Wells

Quantum Hall-Effect Of Two-Dimensional Electron-Gas In Alyga1-Yas Ga1-Xinxas Gaas Pseudomorphic Structures

Tuning spin-orbit coupling and realizing inverse persistent spin helix by an extra above-barrier radiation in a GaAs/Al_0.3Ga_0.7As heterostructure

Transport and Spin Properties of the Two-Dimensional Electron Gas in GaN-based Heterostructures

Photoinduced Spin Precession in Fe/GaAs(001) Heterostructure with Low Power Excitation

Electric control of spin in monolayer WSe2 field effect transistors