Abstract:Conventional HgCdTe infrared detectors need significant cooling in order to reduce noise and leakage currents resulting from thermal generation and recombination processes. Although the need for cooling has long been thought to be fundamental and inevitable, it has been recently suggested that Auger recombination and generation rates can be reduced by using the phenomena of exclusion and extraction to produce nonequilibrium carrier distributions. The devices with Auger suppressed operation requires precise control over the composition, and donor and acceptor doping. The successful development of the molecular beam epitaxy (MBE) growth technique for multi-layer HgCdTe makes it possible to grow these device structures. Theoretical calculations suggest that the p n+ layer sequence is preferable for near-room temperature operation due to longer minority carrier lifetime in lightly doped p-HgCdTe absorber layers. However, because the low doping required for absorption and nonequilibrium operation is easier to achieve in n-type materials, and because Shockley-Read centers should be minimized in order to obtain the benefits of Auger suppression, we have focused on p+ n structures. Planar photodiodes were formed on CdTe/Si (211) composite substrates by As implantation followed by a three step annealing sequence. Three inch diameter Si substrates were employed since they are of high quality, low cost, and available in large areas. Due to this development, large area focal plane arrays (FPAs) operated at room temperature are possible in the near future. The structures were characterized by FTIR, x-ray diffraction, temperature dependent Hall measurements, minority carrier lifetimes by photoconductive decay, and in-situ ellipsometry. To study the relative influence of bulk and surface effects, devices with active areas from 1.6 10−5 cm2 to 10−3 cm2 were fabricated. The smaller area devices show better performance in terms of reverse bias characteristics indicating that the bulk quality could be further improved. At 80 K, the zero bias leakage current for a 40 m 40 m diode with 3.2 m cutoff wavelength is 1 pA, the R0A product is 1.1 104-cm2 and the breakdown voltage is in excess of 500 mV. The device shows a responsivity of 1.3 107 V/W and a 80 K detectivity of 1.9 1011 cm-Hz1/2/W. At 200 K, the zero bias leakage current is 5 nA and the R0A product 2.03-cm2, while the breakdown voltage decreases to 40 mV.

Role of growth temperature on microstructural and electronic properties of rapid thermally grown MoTe2 thin film for IR detection

Role of growth temperature on microstructural and electronic properties of rapid thermally grown MoTe2thin film for infrared detection

High temperature Raman investigation of few-layer MoTe2

Highly Sensitive Visible to Infrared MoTe2 Photodetectors Enhanced by the Photogating Effect.

Unraveling Thermal Transport Properties of MoTe2 Thin Films Using the Optothermal Raman Technique

Phase-controlled van der Waals growth of wafer-scale 2D MoTe2 layers for integrated high-sensitivity broadband infrared photodetection

Thermionic Emission of Atomic Layer Deposited MoO3/Si UV Photodetectors

Role of Process Parameters on Microstructural and Electronic Properties of Rapid Thermally Grown MoS2 Thin Films on Silicon Substrates

Overall High-Performance Near-Infrared Photodetector Based on CVD-Grown MoTe<sub>2</sub> and Graphene Vertical vdWs Heterostructure

Exploring optical properties of and single crystals by spectroscopic ellipsometry

Photodetection of CVD-Grown MoSe2 Monolayer Devices in Infrared Range

Effect of interface on mid-infrared photothermal response of MoS2 thin film grown by pulsed laser deposition

Atomistic Observation of the Local Phase Transition in MoTe2 for Application in Homojunction Photodetectors.

Investigating the temperature-dependent Raman spectroscopy of Se/Bi2Te3 thin films and its enhanced photoresponse for optoelectronic applications

Ordered growth of hexagonal and monoclinic phases of MoTe2 on a sapphire substrate

High performance near-infrared MoTe2/Ge heterojunction photodetector fabricated by direct growth of Ge flake on MoTe2 film substrate

Phase Transformation on Two-Dimensional MoTe2 Films for Surface-Enhanced Raman Spectroscopy

HgCdTe/CdTe/Si infrared photodetectors grown by MBE for near-room temperature operation

Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy

Ultrasensitive Near‐Infrared MoTe2 Photodetectors with Monolithically Integrated Fresnel Zone Plate Metalens

Electrical, optical and mechanical properties of monolayer MoTe 2 for applications in wearable optoelectronic devices