Abstract:A mechanistic understanding of interactions be-tween atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) and their growth substrates is important for achieving the unidirectional alignment of nuclei and seamless stitching of 2D TMD domains and thus 2D wafers. In this work, we conduct a cross-sectional scanning transmission electron microscopy (STEM) study to investigate the atomic-scale nucleation and early stage growth behaviors of chemical vapor deposited monolayer (ML-) MoS2 and molecular beam epitaxy ML-MoSe2 on a Au(111) substrate. Statistical analysis reveals the majority of as-grown domains, i.e., similar to 88% for MoS2 and 90% for MoSe2, nucleate on surface terraces, with the rest (i.e., similar to 12% for MoS2 and 10% for MoSe2) on surface steps. Moreover, within the latter case, step-associated nucleation, similar to 64% of them are terminated with a Mo-zigzag edge in connection with the Au surface steps, with the rest (similar to 36%) being S-zigzag edges. In conjunction with ab initio density functional theory calculations, the results confirm that van der Waals epitaxy, rather than the surface step guided epitaxy, plays deterministic roles for the realization of unidirectional ML-MoS2 (MoSe2) domains on a Au(111) substrate. In contrast, surface steps, particularly their step height, are mainly responsible for the integrity and thickness of MoS2/MoSe2 films. In detail, it is found that the lateral growth of monolayer thick MoS2/MoSe2 domains only proceeds across mono-Au-atom high surface steps (similar to 2.4 angstrom), but fail for higher ones (bi-Au atom step and higher) during the growth. Our cross-sectional STEM study also confirms the existence of considerable compressive residual strain that reaches similar to 3.0% for ML-MoS2/MoSe2 domains on Au(111). The present study aims to understand the growth mechanism of 2D TMD wafers.

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Structural and Electrical Properties of MoTe$_2$ and MoSe$_2$ Grown by Molecular Beam Epitaxy

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Two-Dimensional Molybdenum Tungsten Diselenide Alloys: Photoluminescence, Raman Scattering, and Electrical Transport

Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

Molecular beam epitaxial growth of MoSe2 on graphite, CaF2 and graphene

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Molecular Beam Epitaxy growth of MoTe$_2$ on Hexagonal Boron Nitride

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Ordered growth of hexagonal and monoclinic phases of MoTe2 on a sapphire substrate

Molecular Beam Epitaxy Growth of Transition Metal Dichalcogenide (Mo,Mn)Se$_2$ on 2D, 3D and polycrystalline substrates

Electronic Structure of Molecular Beam Epitaxy Grown 1T^'-Mote_2 Film and Strain Effect

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Molecular Beam Epitaxy Growth of Atomically Ultrathin MoTe2 Lateral Heterophase Homojunctions on Graphene Substrates

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Halide Vapor Phase Epitaxy of Monolayer Molybdenum Diselenide Single Crystals

Millimeter-scale layered MoSe2 grown on sapphire and evidence for negative magnetoresistance

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Van der Waals Heteroepitaxy of Te Crystallites/2H-MoTe2 Atomically Thin Films on GaAs Substrates by Using Metal-Organic Chemical-Vapor Deposition