Abstract:Two-dimensional (2D) photodetectors based on semiconducting transitional metal chalcogenides (TMDs) have attracted much attention because of its unique mechanical and opto-electronic properties which can be integrated into nanoscale-sized opto-electronic devices and complex circuits. However, the photodetection range of 2D TMDs materials based detectors are generally limited within the visible range due to its intrinsic relatively large band-gap. In addition, 2D TMDs materials also suffers from weak light absorption inherited from their atomically thin layers, resulting in a photoresponsivity that can be further improved. Herein, by combining 2D MoS2 with zero-dimensional (0D) PbSe quantum dots (QDs) and Au nanocrystals (NCs), a novel 2D-0D photo detector (i.e., MoS2/PbSe@Au) is fabricated. Our MoS2/PbSe@Au photodetector exploits the 2D MoS2 as the conduction channels and PbSe@Au NCs as light sensitizer, which promote the absorption of the entire device and enable appreciable photodetection extending to the near-infrared (NIR). Prominently, the mixed-dimensional photodetector exhibits high responsivity of 1.22 A/W and detectivity of 1.56*10(9) Jones (cm.Hz(1/2).W-1) at NIR (e.g., 1064 nm) compared with the MoS2 photodetector with PbSe QDs only, which are ascribed to the more efficient two-step charge transfer process between PbSe and MoS2 with the presence of Au NCs. We further identify the new carrier multiplication mechanism when comparing the photoresponse of our photodetectors at 405 nm and 635 nm. We found the extremely high EQE of MoS2/PbSe@Au photodetector at the wavelength of 405 nm (268.1%) could be ascribed to the synergism of carrier multiplication (CM) in PbSe QDs and the photo gating effect induced by Au nanoparticles. Our study demonstrates that the novel mixed-dimensional photodetectors based on CVD-grown MoS2 may provide a new route for designing and realizing high-performance optoelectronic devices with harvesting merits of hybrid nanomaterials.

Photodetection of CVD-Grown MoSe2 Monolayer Devices in Infrared Range

CVD synthesis of large-area, highly crystalline MoSe2 atomic layers on diverse substrates and application to photodetectors

Van der Waals integration inch-scale 2D MoSe2 layers on Si for highly-sensitive broadband photodetection and imaging

Wafer‐scale Single‐crystalline MoSe2 and WSe2 Monolayers Grown by Molecular‐beam Epitaxy at Low‐temperature — the Role of Island‐substrate Interaction and Surface Steps

High performance photodetectors constructed on atomically thin few-layer MoSe2 synthesized using atomic layer deposition and a chemical vapor deposition chamber

Enhanced Visible to Near-Infrared Photodetectors Made from MoS2-based Mixed-Dimensional Structures

Synthesis of Few-Layer 2H-Mose2 Thin Films with Wafer-Level Homogeneity for High-Performance Photodetector

Controllable growth of multilayered XSe 2 (X = W and Mo) for nonlinear optical and optoelectronic applications

Phase-controlled van der Waals growth of wafer-scale 2D MoTe2 layers for integrated high-sensitivity broadband infrared photodetection

Low wavenumber Raman spectroscopy of highly crystalline MoSe2 grown by chemical vapor deposition

Growth and Photoresponse of WS2/MoSe2 Lateral Heterostructure

Infrared Light Gated MoS_2 Field Effect Transistor

High response and broadband photodetection by monolayer MoSe2 with vanadium doping and Mo vacancies

Wafer-Scale Atomic Assembly for 2D Multinary Transition Metal Dichalcogenides for Visible and NIR Photodetection

Facile Integration of MoS2/SiC Photodetector by Direct Chemical Vapor Deposition

Three-terminal Photodetectors Based on Chemical Vapor Deposition-Grown Triangular MoSe2 Flakes

Three-Terminal Photodetectors based on Chemical Vapor Deposition-Grown Triangular MoSe 2 Flakes

High external quantum efficiency monolayer MoS2(1−x)Se2x phototransistor with alloying-induced near-infrared absorption

Room-Temperature Ultrabroadband Photodetection with MoS2 by Electronic-Structure Engineering Strategy

High-performance MoSe2 Homojunction Infrared Photodetector

Large-Scale Multilayer MoS2 Nanosheets Grown by Atomic Layer Deposition for Sensitive Photodetectors