Abstract:Two-dimensional (2D) photodetectors based on semiconducting transitional metal chalcogenides (TMDs) have attracted much attention because of its unique mechanical and opto-electronic properties which can be integrated into nanoscale-sized opto-electronic devices and complex circuits. However, the photodetection range of 2D TMDs materials based detectors are generally limited within the visible range due to its intrinsic relatively large band-gap. In addition, 2D TMDs materials also suffers from weak light absorption inherited from their atomically thin layers, resulting in a photoresponsivity that can be further improved. Herein, by combining 2D MoS2 with zero-dimensional (0D) PbSe quantum dots (QDs) and Au nanocrystals (NCs), a novel 2D-0D photo detector (i.e., MoS2/PbSe@Au) is fabricated. Our MoS2/PbSe@Au photodetector exploits the 2D MoS2 as the conduction channels and PbSe@Au NCs as light sensitizer, which promote the absorption of the entire device and enable appreciable photodetection extending to the near-infrared (NIR). Prominently, the mixed-dimensional photodetector exhibits high responsivity of 1.22 A/W and detectivity of 1.56*10(9) Jones (cm.Hz(1/2).W-1) at NIR (e.g., 1064 nm) compared with the MoS2 photodetector with PbSe QDs only, which are ascribed to the more efficient two-step charge transfer process between PbSe and MoS2 with the presence of Au NCs. We further identify the new carrier multiplication mechanism when comparing the photoresponse of our photodetectors at 405 nm and 635 nm. We found the extremely high EQE of MoS2/PbSe@Au photodetector at the wavelength of 405 nm (268.1%) could be ascribed to the synergism of carrier multiplication (CM) in PbSe QDs and the photo gating effect induced by Au nanoparticles. Our study demonstrates that the novel mixed-dimensional photodetectors based on CVD-grown MoS2 may provide a new route for designing and realizing high-performance optoelectronic devices with harvesting merits of hybrid nanomaterials.

High performance photodetectors constructed on atomically thin few-layer MoSe2 synthesized using atomic layer deposition and a chemical vapor deposition chamber

Synthesis of Few-Layer 2H-Mose2 Thin Films with Wafer-Level Homogeneity for High-Performance Photodetector

Fast Photoresponse from 1T Tin Diselenide Atomic Layers

CVD synthesis of large-area, highly crystalline MoSe2 atomic layers on diverse substrates and application to photodetectors

Enhanced Visible to Near-Infrared Photodetectors Made from MoS2-based Mixed-Dimensional Structures

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Photodetection of CVD-Grown MoSe2 Monolayer Devices in Infrared Range

Extremely Low Dark Current MoS2 Photodetector Via 2D Halide Perovskite As the Electron Reservoir

High performance photodetector based on few-layer MoTe2/CdS0.42Se0.58 flake heterojunction

High-responsivity molybdenum diselenide photodetector with dirac electrodes

Large-Scale Multilayer MoS2 Nanosheets Grown by Atomic Layer Deposition for Sensitive Photodetectors

Scalable Fabrication of High-Performance Self-Powered a -MoSe 2 Thin-Film-Based Photodetectors on a-SiO 2 /Si Substrates

High response and broadband photodetection by monolayer MoSe2 with vanadium doping and Mo vacancies

Scalable Fabrication of Atomically Thin Monolayer MoS2 Photodetectors

High-performance MoSe2 Homojunction Infrared Photodetector

Design and Construction of Ultra-Thin Mose2 Nanosheet-Based Heterojunction for High-Speed and Low-Noise Photodetection

Fabrication of Scalable and Ultra Low Power Photodetectors with High Light/dark Current Ratios Using Polycrystalline Monolayer MoS2 Sheets

Growth and Photoresponse of WS2/MoSe2 Lateral Heterostructure