Abstract:Low‐temperature atomic‐molecular layer deposition pathway for highly stable Zn‐benzene dithol film is reported. These novel conformal thin films are deposited using non‐pyrophoric bis‐3‐(N,N‐dimethylamino)propyl zinc [Zn(DMP)2] and 1,4‐benzene dithiol (BDT) precursors. Conformality of the reported process is demonstrated using lateral high‐aspect‐ratio structures. The excellent film coverage of the reported process is indicated with penetration depth of aspect ratio over 400. The atomic/molecular layer deposition (ALD/MLD) technique combining both inorganic and organic precursors is strongly emerging as a unique tool to design exciting new functional metal‐organic thin‐film materials. Here, this method is demonstrated to work even at low deposition temperatures and can produce highly stable and conformal thin films, fulfilling the indispensable prerequisites of today's 3D microelectronics and other potential industrial applications. This new ALD/MLD process is developed for Zn‐organic thin films grown from non‐pyrophoric bis‐3‐(N,N‐dimethylamino)propyl zinc [Zn(DMP)2] and 1,4‐benzene dithiol (BDT) precursors. This process yields air‐stable Zn‐BDT films with appreciably high growth per cycle (GPC) of 4.5 Å at 60 °C. The Zn/S ratio is determined at 0.5 with Rutherford backscattering spectrometry (RBS), in line with the anticipated (Zn─S─C6H6─S─)n bonding scheme. The high degree of conformality is shown using lateral high‐aspect‐ratio (LHAR) test substrates; scanning electron microscopy (SEM) analysis shows that the film penetration depth (PD) into the LHAR structure with cavity height of 500 nm is over 200 μm (i.e., aspect‐ratio of 400). It is anticipated that the electrically insulating metal‐organic Zn‐BDT thin films grown via the solvent‐free ALD/MLD technique, can be excellent barrier layers for temperature‐sensitive and flexible electronic devices.

Conformal Zn‐Benzene Dithiol Thin Films for Temperature‐Sensitive Electronics Grown via Industry‐Feasible Atomic/Molecular Layer Deposition Technique

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