Abstract:The traditional influence on the sidewall damage of Micro-LED was mostly focused on the research of I-V-L. In this paper, we discussed the influence of Micro-LED sidewall damage from the perspective of optical and microstructural characterization. Scanning electron microscopy showed that the Micro-LED structure with smaller size was more irregular after inductively coupled plasma etching. High-resolution transmission electron microscopy and energy dispersive x-ray spectroscopy analysis showed that the area of the upper and lower regions of the quantum well was inconsistent, there was about 2 nm lattice disorder on the surface of the sidewall of the mesa, and oxygen and silicon impurity atoms were enriched. For optical characterization, a method combining laser scanning confocal microscopy and photoluminescence (PL) was proposed to evaluate the optical performance of the mesa. The results showed that the luminescence of Micro-LED mesa was uneven, the luminous intensity at the edge of the mesa was reduced by more than 65%, and the luminous wavelength was shifted by several nanometers. Finally, we optimized the sidewall treatment process, effectively improved the performance of Micro-LED devices by combining tetramethylammonium hydroxide treatment and SiO2 passivation, and increased the luminous intensity of Micro-LED 2 mu m away from the edge by about 4.7 times and PL uniformity was greatly improved. These results provided an available reference for the development of Micro-LED.

Investigation of GaN-Based Micro-LEDs with Effective Tetramethylammonium Hydroxide Treatment

External quantum efficiency enhancement of GaN-based blue LEDs by treating their full-M-sided hexagonal mesa with TMAH solution

Microstructure characterization and sidewall treatment of GaN/InGaN micro-light-emitting diodes

High-Efficiency, Microscale Gan Light-Emitting Diodes and Their Thermal Properties on Unusual Substrates

Enhanced contact performance of high-brightness micro-LEDs via ITO/Al anode stack and annealing process

Improved electro-optical and photoelectric performance of GaN-based micro-LEDs with an atomic layer deposited AlN passivation layer.

Efficiency boosting of 236 nm AlGaN-based micro-LEDs

P‐10.7: Investigation of Fabrication Technologies of GaN‐based Micro‐LED Devices

Study of GaN-Based Light-Emitting Diode (LED) With a Hybrid Surface Structure

Improvement of the Emission Intensity of GaN-Based Micro-Light Emitting Diodes by a Suspended Structure

Improved Optical and Electrical Characteristics of GaN-Based Micro-LEDs by Optimized Sidewall Passivation

Comparative Analysis of Microstructure, Electrical and Optical Performance in Sidewall Etching Process for GaN-Based Green Micro-LED

Investigations of Sidewall Passivation Technology on the Optical Performance for Smaller Size GaN-Based Micro-LEDs

Investigation on the Optical Properties of Micro-LEDs Based on InGaN Quantum Dots Grown by Molecular Beam Epitaxy

Recent Advances on GaN-Based Micro-LEDs

Optimizing Al Composition in Barriers for InGaN Amber Micro-LEDs with High Wall-Plug Efficiency

GaN-on-Si Micro Resonant-Cavity Light-Emitting Diodes with Dielectric and Metal Mirrors

Optical and microstructural characterization of Micro-LED with sidewall treatment

Improved Performance of AlGaInP Red Micro Light-Emitting Diodes by Sidewall Treatments of Citric Acid

Study on 3D Thermal Transport in Micro-Leds on GaN Substrate at the Level of Kw/cm2

High-temperature Performance of InGaN-based Amber Micro-Light-emitting Diodes Using an Epitaxial Tunnel Junction Contact