Creating extreme subsurface integrity by laser-induced material self-organization

S. Muto,Jiwang Yan,T. Kuriyagawa
2009-12-01
Abstract:INTRODUCTION Single-crystal silicon and germanium are not only dominant semiconductor materials but also important infrared optical materials. The manufacturing of defect-free substrates of silicon and germanium is indispensable for production of precision dark-field optics, optoelectronic elements, and micro electromechanical systems. Usually, silicon and germanium substrates are manufactured by mechanical machining processes such as slicing, cutting, grinding and lapping followed by polishing. However, these processes will inevitably cause subsurface damage to the crystalline structures due to the mechanical contacts between the tools and the workpieces. The subsurface damage includes a microstructural change, namely amorphization, in the near-surface layer, and a dislocation layer beneath the amorphous layer [1-3]. Removing the subsurface damage has become a subject of concentrated research interests from multidisciplinary research communities and industries. Currently, chemical etching and/or chemo-mechanical polishing (CMP) are carried out after the machining processes to remove the damaged layers. However, due to the poor controllability in processing depth, deterioration of form accuracy becomes a big problem. Other issues, such as increase in production cost, and environmental pollution due to the chemical waste fluids, are also serious problems. Instead of removing the damaged surface layer, an alternative method currently being considered is the use of laser irradiation to repair the subsurface damage [4]. The purpose of the present work is to explore the possibility of generating perfect single crystalline structures on grinding-damaged semiconductor substrates by nanosecond-pulsed laser irradiation.
Physics,Engineering,Materials Science
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