Abstract: The silicon-based electronic technology has made quite a great progress in the past five decades since the invention of the integrated circuit [1]. The advance is maintained primarily through the size scaling of the devices, i.e., metal-oxide-semiconductor field-effect transistor (MOSFET), which has resulted in many successive generations of devices with increased transistor performance and density. In case of the continual decrease for the device dimensions at a present speed, most of scientists forecast that the development of the integrated circuit will meet its physical and theoretical limit soon, perhaps in next decade [2–4]. To keep the device performance continuing to update, the seeking and preparation of new technologies is mandatory [5]. So far, two distinct routes have been taken to address that issue. One of them is to adopt the revolutionary technologies based on totally new concepts, e.g., two-terminal molecular devices [6], quantum computing [7], spintronics [8], and so on. However, these technologies will be incompatible with present application developed from silicon-based electronic industry. In the other case, attention is paid to a more evolutionary approach that is based on the well-established three terminal transistor concept, but utilizes alternative materials, specially single-walled carbon nanotubes (SWCNTs) that possess many unique advantages including onedimensional nanoscale structure as well as the excellent electrical and optical properties [5]. High-mobility, low-defect structure and intrinsic nanometer scale of carbon nanotubes (CNTs) have led to an intense research effort into the viability of utilizing carbon-nanotube field-effect transistors (CNTFETs) as a replacement for, or a complement to, future semiconductor devices [9–17].

Semiconductor nanochannels in metallic carbon nanotubes by thermomechanical chirality alteration

Chirality Transitions and Transport Properties of Individual Few-Walled Carbon Nanotubes As Revealed by in Situ TEM Probing

Using Nanoscale Thermocapillary Flows to Create Arrays of Purely Semiconducting Single-Walled Carbon Nanotubes

Nanotube and Nanowire Transistors

Carbon Nanotube Technology For Solid State And Vacuum Electronics

Acoustic-assisted assembly of an individual monochromatic ultralong carbon nanotube for high on-current transistors.

Directly Correlating the Strain-Induced Electronic Property Change to the Chirality of Individual Single-Walled and Few-Walled Carbon Nanotubes

Tuning Threshold Voltage of Carbon Nanotube Thin Film Transistors by Channel Length Engineering

Femtosecond Laser Treatment of SWNT Onto Metal Electrodes and Its Effect on Carbon Nanotube Field Effect Transistor

Nanoassembly and Packaging of Single Carbon Nanotube Based Transistors

A novel thin-film transistor using carbon nanotubes as both channel and electrodes

High-throughput optical imaging and spectroscopy of individual carbon nanotubes in devices

Tuning Semiconducting Properties Of Single Carbon Nanotube For Fabrication Of Nano Devices

Modelling of Chirality-Dependent Current-Voltage Characteristics of Carbon-Nanotube Field-Effect Transistors

Modeling And Simulation Of Carbon Nanotube-Semiconductor Heterojunction Vertical Field Effect Transistors

Nanowelded Multichannel Carbon-Nanotube Field-Effect Transistors (MC-CNTFETs)

Carbon Nanotube Field‐Effect Transistors: Towards Entire‐Carbon‐Nanotube Circuits: the Fabrication of Single‐Walled‐Carbon‐Nanotube Field‐Effect Transistors with Local Multiwalled‐Carbon‐Nanotube Interconnects (adv. Mater. 13/2009)

Fabrication and Characterization of the Performance of Multi-Channel Carbon-Nanotube Field-Effect Transistors

Full-Band Quantum Transport Based Simulation for Carbon Nanotube Field Effect Transistor from Chirality to Device Performance

Direct Identification of Metallic and Semiconducting Single-Walled Carbon Nanotubes in Scanning Electron Microscopy.

The Effect of Localized Strain on the Electrical Characteristics of Curved Carbon Nanotubes