Abstract:The VBr are easy to form in wide‐bandgap perovskite films, and the introduction of I‐rich alkali metal small‐molecule compounds is demonstrated to heal the VBr defects and increase the VOC of perovskite indoor photovoltaic cells. In this work, a stable perovskite indoor photovoltaic module with an independent certified efficiency of 36.36% at 1000 lux TL84 illumination is also reported. Indoor photovoltaics (IPVs) are expected to power the Internet of Things ecosystem, which is attracting ever‐increasing attention as part of the rapidly developing distributed communications and electronics technology. The power conversion efficiency of IPVs strongly depends on the match between typical indoor light spectra and the band gap of the light absorbing layer. Therefore, band‐gap tunable materials, such as metal‐halide perovskites, are specifically promising candidates for approaching the indoor illumination efficiency limit of ∼56%. However, perovskite materials with ideal band gap for indoor application generally contain high bromine (Br) contents, causing inferior open‐circuit voltage (VOC). By fabricating a series of wide‐bandgap perovskites (Cs0.17FA0.83PbI3−xBrx, 0.6 ≤ x ≤ 1.6) with varying Br contents and related band gaps, it is found that, the high Br vacancy (VBr) defect density is a significant reason that leading to large VOC deficits apart from the well‐accepted halide segregation. The introduction of I‐rich alkali metal small‐molecule compounds is demonstrated to suppress the VBr and increase the VOC of perovskite IPVs up to 1.05 V under 1000 lux light‐emitting diode illumination, one of the highest VOC values reported so far. More importantly, the modules are sent for independent certification and have gained a record efficiency of 36.36%.

Bipolar Pseudohalide Ammonium Salts Bridged Perovskite Buried Interface toward Efficient Indoor Photovoltaics

Minimizing Voltage Deficit in Perovskite Indoor Photovoltaics by Interfacial Engineering

Wide-Gap Perovskite Via Synergetic Surface Passivation and Its Application Toward Efficient Stacked Tandem Photovoltaics.

Br Vacancy Defects Healed Perovskite Indoor Photovoltaic Modules with Certified Power Conversion Efficiency Exceeding 36%

Enhanced Efficiency and Stability of Wide‐Bandgap Perovskites via Br‐Rich Bulk and Surface 2D Passivation for Indoor Photovoltaics

Engineering the Non‐Radiative Recombination of Mixed‐Halide Perovskites with Optimal Bandgap for Indoor Photovoltaics

Curing the vulnerable heterointerface via organic-inorganic hybrid hole transporting bilayers for efficient inverted perovskite solar cells

High Efficient Hole Extraction and Stable All-Bromide Inorganic Perovskite Solar Cells via Derivative-Phase Gradient Bandgap Architecture

Pushing the Limit of Open‐circuit Voltage Deficit Via modifying Buried Interface in CsPbI3 Perovskite Solar Cells

Efficient wide-bandgap perovskite solar cells with open-circuit voltage deficit below 0.4 V via hole-selective interface engineering

Impermeable inorganic “walls” sandwiching perovskite layer toward inverted and indoor photovoltaic devices

Ion‐Dipole Interaction Enabling Highly Efficient CsPbI3 Perovskite Indoor Photovoltaics

Interface Engineering for All‐Inorganic CsPbIBr 2 Perovskite Solar Cells with Enhanced Power Conversion Efficiency over 11%

Minimized surface deficiency on wide-bandgap perovskite for efficient indoor photovoltaics

Impermeable Inorganic Walls Sandwiching Photoactive Layer toward Inverted Perovskite Solar and Indoor-Photovoltaic Devices

Multifunctional molecule interface modification for high-performance inverted wide-bandgap perovskite cells and modules

Self‐Assembled Amphiphilic Monolayer for Efficient and Stable Wide‐Bandgap Perovskite Solar Cells

Ambipolar-transport wide-bandgap perovskite interlayer for organic photovoltaics with over 18% efficiency

Regulating the Perovskite/c60 Interface Via a Bifunctional Interlayer for Efficient Inverted Perovskite Solar Cells

Highly electroluminescent and stable inorganic CsPbI2Br perovskite solar cell enabled by balanced charge transfer

2D/3D heterojunction engineering at the buried interface towards high-performance inverted methylammonium-free perovskite solar cells