Abstract:Analog and digital integrated circuit performance has greatly benefited by the shrinking of semiconductor fabrication technology components. In order to reduce the size of the transistors, it is obvious that the speed of the circuits must increase and the supply voltage must decrease. Although this decreases the power consumption of the circuits, it typically reduces the characteristics of analog circuits, such as dynamic range and output resistance. The gift In this study, a novel wide bandwidth current mirror with low power consumption, low voltage, and super high voltage swing are given. The proposed design calls for a current mirror bandwidth of 168 MHz. Additionally, the output impedance for the proposed circuit, which is exceptionally high and is close to 175 MΩ according to the simulation results, guarantees the high accuracy of the suggested current mirror current. The suggested circuit design's low power consumption of 42.4 μW, lowest output voltage of 100 mV, and maximum swing limit of 850 mV all demonstrate that they are ideally suited for low power/operational voltage applications and ultra-low voltage circuit design. And resists less-than-ideal PVT circumstances. The capability of this technique to achieve high-speed current mirror and high-current driving capabilities with few accuracy or power performance restrictions is demonstrated in this work. It is implemented in 0.18 m AMS CMOS technology with a 1 V supply voltage and offers a high output current with a relative current copy error of 2% and a maximum settling time of 2–4 ns, making it well suited for the implementation of quick and balanced multipole current sources.

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Design and simulation of a new current mirror circuit with low power consumption and high performance and output impedance

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Characterization and Modeling of Self-Heating in Nanometer Bulk-CMOS at Cryogenic Temperatures

Performance of TFET and FinFET devices applied to current mirrors for different dimensions and temperatures

Analysis on Static Current Sharing of N-Paralleled Silicon Carbide MOSFETs

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Unified Self-Heating Effect Model for Advanced Digital and Analog Technology and Thermal-Aware Lifetime Prediction Methodology

Mirror Deformation and Zero Thermal Expansion Temperature Shift in Optical Cavity due to Radiative Heating

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Electro-thermal characterization of Si-Ge HBTs with pulse measurement and transient simulation

The Impact of Self-Heating on HCI Reliability in High-Performance Digital Circuits

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Experimental Demonstration of Current Mirrors Based on Silicon Nanowire Transistors for Inversion and Subthreshold Operations

Research On The Dynamic Performance Of Mems Micromirrors