All-2D electronics for AI processing

Fang Wang,Weida Hu

DOI: https://doi.org/10.1038/s41563-023-01720-z

IF: 41.2

2023-11-28

Nature Materials

Abstract:The monolithic 3D integration of wafer-free all-2D-materials-based electronics can produce an AI processor.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter

What problem does this paper attempt to address?

Monolithic 3D integration of 2D materials-based electronics towards ultimate edge computing solutions

Ji-Hoon Kang,Heechang Shin,Ki Seok Kim,Min-Kyu Song,Doyoon Lee,Yuan Meng,Chanyeol Choi,Jun Min Suh,Beom Jin Kim,Hyunseok Kim,Anh Tuan Hoang,Bo-In Park,Guanyu Zhou,Suresh Sundaram,Phuong Vuong,Jiho Shin,Jinyeong Choe,Zhihao Xu,Rehan Younas,Justin S. Kim,Sangmoon Han,Sangho Lee,Sun Ok Kim,Beomseok Kang,Seungju Seo,Hyojung Ahn,Seunghwan Seo,Kate Reidy,Eugene Park,Sungchul Mun,Min-Chul Park,Suyoun Lee,Hyung-Jun Kim,Hyun S. Kum,Peng Lin,Christopher Hinkle,Abdallah Ougazzaden,Jong-Hyun Ahn,Jeehwan Kim,Sang-Hoon Bae

DOI: https://doi.org/10.1038/s41563-023-01704-z

IF: 41.2

2023-11-28

Nature Materials

Abstract:Three-dimensional (3D) hetero-integration technology is poised to revolutionize the field of electronics by stacking functional layers vertically, thereby creating novel 3D circuity architectures with high integration density and unparalleled multifunctionality. However, the conventional 3D integration technique involves complex wafer processing and intricate interlayer wiring. Here we demonstrate monolithic 3D integration of two-dimensional, material-based artificial intelligence (AI)-processing hardware with ultimate integrability and multifunctionality. A total of six layers of transistor and memristor arrays were vertically integrated into a 3D nanosystem to perform AI tasks, by peeling and stacking of AI processing layers made from bottom-up synthesized two-dimensional materials. This fully monolithic-3D-integrated AI system substantially reduces processing time, voltage drops, latency and footprint due to its densely packed AI processing layers with dense interlayer connectivity. The successful demonstration of this monolithic-3D-integrated AI system will not only provide a material-level solution for hetero-integration of electronics, but also pave the way for unprecedented multifunctional computing hardware with ultimate parallelism.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter
Hierarchical processing enabled by 2D ferroelectric semiconductor transistor for low-power and high-efficiency AI vision system

Guangcheng Wu,Li Xiang,Wenqiang Wang,Chengdong Yao,Zeyi Yan,Cheng Zhang,Jiaxin Wu,Yong Liu,Biyuan Zheng,Huawei Liu,Chengwei Hu,Xingxia Sun,Chenguang Zhu,Yizhe Wang,Xiong Xiong,Yanqing Wu,Liang Gao,Dong Li,Anlian Pan,Shengman Li

DOI: https://doi.org/10.1016/j.scib.2023.12.027

2024-02-26

Abstract:The growth of data and Internet of Things challenges traditional hardware, which encounters efficiency and power issues owing to separate functional units for sensors, memory, and computation. In this study, we designed an α-phase indium selenide (α-In2Se3) transistor, which is a two-dimensional ferroelectric semiconductor as the channel material, to create artificial optic-neural and electro-neural synapses, enabling cutting-edge processing-in-sensor (PIS) and computing-in-memory (CIM) functionalities. As an optic-neural synapse for low-level sensory processing, the α-In2Se3 transistor exhibits a high photoresponsivity (2855 A/W) and detectivity (2.91 × 1014 Jones), facilitating efficient feature extraction. For high-level processing tasks as an electro-neural synapse, it offers a fast program/erase speed of 40 ns/50 µs and ultralow energy consumption of 0.37 aJ/spike. An AI vision system using α-In2Se3 transistors has been demonstrated. It achieved an impressive recognition accuracy of 92.63% within 12 epochs owing to the synergistic combination of the PIS and CIM functionalities. This study demonstrates the potential of the α-In2Se3 transistor in future vision hardware, enhancing processing, power efficiency, and AI applications.
Vertical Integration of 2D Building Blocks for All‐2D Electronics

Jian Tang,Qinqin Wang,Zheng Wei,Cheng Shen,Xiaobo Lu,Shuopei Wang,Yanchong Zhao,Jieying Liu,Na Li,Yanbang Chu,Jinpeng Tian,Fanfan Wu,Wei Yang,Congli He,Rong Yang,Dongxia Shi,Kenji Watanabe,Takashi Taniguchi,Guangyu Zhang

DOI: https://doi.org/10.1002/aelm.202000550

IF: 6.2

2020-10-07

Advanced Electronic Materials

Abstract:2D materials are promising building blocks for novel electronic devices. It is possible that future electronic devices will be entirely made of 2D materials to fully realize their potential, due to their natural thinness, atomically flat surface/interfaces and diverse properties. In this work, three typical 2D materials, i.e., monolayer molybdenum disulfide (MoS2), hexagonal boron nitride (hBN), and few layer graphene (FLG) serving as semiconducting, dielectric, and contact/gating materials, respectively, are assembled for vertically integrated multilayer devices via the layer‐by‐layer stacking process. An individual layer of all‐2D field effect transistors (FETs) shows comprehensive device performances with parameters of ultralow off‐current ≈100 fA, ultrahigh on/off ratio approaching to 1010, ideal subthreshold swing (SS) ≈100 mV dec−1, and decent room temperature mobility up to 52 cm2 V−1 s−1, benefiting from the effective dual‐gate modulation and high contact quality. Vertically stacked multilayers of all‐2D FETs are successfully achieved with nearly multiplied on‐current density, equivalent device mobility, and persevered on/off ratio and SS of the individual layers. The vertical integration of multilayered devices with different layer functions, e.g., memory, logic and sensor, are further demonstrated. This work provides a technological base for future high‐performance integrated devices based on all‐2D materials.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
The Road for 2D Semiconductors in the Silicon Age

Shuiyuan Wang,Xiaoxian Liu,Peng Zhou

DOI: https://doi.org/10.1002/adma.202106886

Abstract:Continued reduction in transistor size can improve the performance of silicon integrated circuits (ICs). However, as Moore's law approaches physical limits, high-performance growth in silicon ICs becomes unsustainable, due to challenges of scaling, energy efficiency, and memory limitations. The ultrathin layers, diverse band structures, unique electronic properties, and silicon-compatible processes of 2D materials create the potential to consistently drive advanced performance in ICs. Here, the potential of fusing 2D materials with silicon ICs to minimize the challenges in silicon ICs, and to create technologies beyond the von Neumann architecture, is presented, and the killer applications for 2D materials in logic and memory devices to ease scaling, energy efficiency bottlenecks, and memory dilemmas encountered in silicon ICs are discussed. The fusion of 2D materials allows the creation of all-in-one perception, memory, and computation technologies beyond the von Neumann architecture to enhance system efficiency and remove computing power bottlenecks. Progress on the 2D ICs demonstration is summarized, as well as the technical hurdles it faces in terms of wafer-scale heterostructure growth, transfer, and compatible integration with silicon ICs. Finally, the promising pathways and obstacles to the technological advances in ICs due to the integration of 2D materials with silicon are presented.
Monolithic 3D integration with 2D materials

Sangmoon Han,Ji-Yun Moon,Sang-Hoon Bae

DOI: https://doi.org/10.1038/s41928-024-01260-7

IF: 33.255

2024-10-10

Nature Electronics

Abstract:Nature Electronics, Published online: 09 October 2024; doi:10.1038/s41928-024-01260-7 The monolithic 3D integration of 2D molybdenum disulfide memtransistors and graphene chemitransistors can be used to create near-sensor computing chips with high interconnect density and a vertical separation between tiers of less than 50 nm.

engineering, electrical & electronic
The development of integrated circuits based on two-dimensional materials

Kaichen Zhu,Chao Wen,Areej A. Aljarb,Fei Xue,Xiangming Xu,Vincent Tung,Xixiang Zhang,Husam N. Alshareef,Mario Lanza

DOI: https://doi.org/10.1038/s41928-021-00672-z

IF: 33.255

2021-11-01

Nature Electronics

Abstract:Two-dimensional (2D) materials could potentially be used to develop advanced monolithic integrated circuits. However, despite impressive demonstrations of single devices and simple circuits—in some cases with performance superior to those of silicon-based circuits—reports on the fabrication of integrated circuits using 2D materials are limited and the creation of large-scale circuits remains in its infancy. Here we examine the development of integrated circuits based on 2D layered materials. We assess the most advanced circuits fabricated so far and explore the key challenges that need to be addressed to deliver highly scaled circuits. We also propose a roadmap for the future development of integrated circuits based on 2D layered materials.

engineering, electrical & electronic
Dielectric Engineered Two-Dimensional Neuromorphic Transistors

Du Xiang,Tao Liu,Xumeng Zhang,Peng Zhou,Wei Chen

DOI: https://doi.org/10.1021/acs.nanolett.1c00492

IF: 10.8

2021-04-09

Nano Letters

Abstract:Two-dimensional (2D) materials, which exhibit planar-wafer technique compatibility and pure electrically triggered communication, have established themselves as potential candidates in neuromorphic architecture integration. However, the current 2D artificial synapses are mainly realized at a single-device level, where the development of 2D scalable synaptic arrays with complementary metal-oxide-semiconductor compatibility remains challenging. Here, we report a 2D transition metal dichalcogenide-based synaptic array fabricated on commercial silicon-rich silicon nitride (sr-SiNx) substrate. The array demonstrates uniform performance with sufficiently high analogue on/off ratio and linear conductance update, and low cycle-to-cycle variability (1.5%) and device-to-device variability (5.3%), which are essential for neuromorphic hardware implementation. On the basis of the experimental data, we further prove that the artificial synapses can achieve a recognition accuracy of 91% on the MNIST handwritten data set. Our findings offer a simple approach to achieve 2D synaptic arrays by using an industry-compatible sr-SiNx dielectric, promoting a brand-new paradigm of 2D materials in neuromorphic computing.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Neuromorphic Computing: Devices, Hardware, and System Application Facilitated by Two-Dimensional Materials

Jihong Bian,Zhenyuan Cao,Peng Zhou

DOI: https://doi.org/10.1063/5.0067352

IF: 15

2021-01-01

Applied Physics Reviews

Abstract:Conventional computing based on von Neumann architecture cannot satisfy the demands of artificial intelligence (AI) applications anymore. Neuromorphic computing, emulating structures and principles based on the human brain, provides an alternative and promising approach for efficient and low consumption information processing. Herein, recent progress in neuromorphic computing enabled by emerging two-dimensional (2D) materials is introduced from devices design and hardware implementation to system integration. Especially, the advances of hopeful artificial synapses and neurons utilizing the resistive-switching-based devices, 2D ferroelectric-based memories and transistors, ultrafast flash, and promising transistors with attractive structures are highlighted. The device features, performance merits, bottlenecks, and possible improvement strategies, along with large-scale brain-inspired network fulfillment, are presented. Challenges and prospects of system application for neuromorphic computing are briefly discussed, shedding light on its great potential for AI.
An in-memory computing architecture based on a duplex 2D material structure for in-situ machine learning

Xinran Wang,Hongkai Ning,Zhihao Yu,Qingtian Zhang,Hengdi Wen,Bin Gao,Yun Mao,Yuankun Li,Ying Zhou,Yue Zhou,Jiewei Chen,Lei Liu,Wenfeng Wang,Taotao Li,Yating Li,Wanqing Meng,Weisheng Li,Yun Li,Hao Qiu,Yi Shi,Yang Chai,Huaqiang Wu

DOI: https://doi.org/10.21203/rs.3.rs-1973593/v1

2023-01-01

Abstract:Abstract The growing computational demand in artificial intelligence (AI) calls for hardware solutions that are capable of in-situ machine learning, where both training and inference are performed by edge computation. This not only requires extremely energy-efficient architecture (such as in-memory computing, IMC) but also memory hardware with tunable properties to simultaneously meet the demand for training and inference. Here, we report a duplex device structure based on ferroelectric field-effect transistor (FeFET) and atomically thin MoS2 channel and realize a universal IMC architecture for in-situ learning. By exploiting the tunability of ferroelectric energy landscape, the duplex building block demonstrates overall excellent performance in endurance (>1013), retention (>10 years), speed (4.8 ns) and energy consumption (22.7 fJ/(bit·μm2)). We implemented a hardware neural network using arrays of two-transistor-one-duplex-FeFET (2T1D) cells and achieved 99.86% accuracy in non-linear localization task with in-situ trained weights. Simulations show that the proposed device architecture could achieve the same level of performance as graphics processing unit under notably improved energy efficiency. Our device core can be combined with silicon circuitry through three-dimensional heterogeneous integration to give a hardware solution toward general edge intelligence (EI).
Neuromorphic Devices Based on Two-Dimensional Materials and Their Applications

Tongxuan Li

DOI: https://doi.org/10.54097/kxsmsn90

2024-03-26

Abstract:Neuromorphic computing, inspired by the human brain, utilizes thin 2D materials like graphene for their unique electronic properties. These materials are crucial in creating efficient, high-performance computing devices. This paper discusses the synthesis methods for 2D materials, including chemical vapor deposition and mechanical exfoliation, and their integration into neuromorphic device architectures such as transistors and memristors. The paper explores how these devices emulate synaptic behaviors and neuronal activities through charge transport mechanisms, ion migration, and the exploitation of material defects. Applications in artificial intelligence, edge computing, sensor networks, and robotics are highlighted, showcasing the potential of 2D materials to revolutionize these fields. The paper also addresses the challenges related to scalability, uniformity, and energy efficiency, and concludes by offering perspectives on future research directions in this burgeoning field. This comprehensive study underscores the significance of 2D materials in advancing neuromorphic computing, paving the way for more efficient, powerful, and brain-like artificial intelligence systems.
A Case for 3D Integrated System Design for Neuromorphic Computing & AI Applications

Eren Kurshan,Hai Li,Mingoo Seok,Yuan Xie

DOI: https://doi.org/10.48550/arXiv.2103.04852

2021-03-03

Abstract:Over the last decade, artificial intelligence has found many applications areas in the society. As AI solutions have become more sophistication and the use cases grew, they highlighted the need to address performance and energy efficiency challenges faced during the implementation process. To address these challenges, there has been growing interest in neuromorphic chips. Neuromorphic computing relies on non von Neumann architectures as well as novel devices, circuits and manufacturing technologies to mimic the human brain. Among such technologies, 3D integration is an important enabler for AI hardware and the continuation of the scaling laws. In this paper, we overview the unique opportunities 3D integration provides in neuromorphic chip design, discuss the emerging opportunities in next generation neuromorphic architectures and review the obstacles. Neuromorphic architectures, which relied on the brain for inspiration and emulation purposes, face grand challenges due to the limited understanding of the functionality and the architecture of the human brain. Yet, high-levels of investments are dedicated to develop neuromorphic chips. We argue that 3D integration not only provides strategic advantages to the cost-effective and flexible design of neuromorphic chips, it may provide design flexibility in incorporating advanced capabilities to further benefits the designs in the future.

Emerging Technologies,Artificial Intelligence,Hardware Architecture,Machine Learning,Neural and Evolutionary Computing
2D Materials for Intelligent Devices

Xuan Pan,Yixiang Li,Bin Cheng,Shi-Jun Liang,Feng Miao

DOI: https://doi.org/10.1007/s11433-022-2056-1

2023-01-01

Abstract:Neuromorphic intelligent hardware technologies have undergone rapid advancement during the past decade, with the goal of building intelligent devices and systems capable of overcoming challenges associated with conventional hardware. Realization of neuromorphic intelligent hardware depends on major advances in materials science, condensed matter physics, device physics and engineering. As a revolutionary discovery, two-dimensional (2D) materials with atomically-thin thickness and exceptionally high tunability introduce a new physical paradigm and show great promise in the development of intelligent devices. Here, we give prominence to three categories of tunable properties (i.e., charge carrier, band structure, lattice structure) that are inherent for 2D materials and review their superiorities in constructing intelligent devices particularly in electronics and optoelectronics. Furthermore, we provide insight into how the unique physical mechanisms emerging in 2D materials offer a fertile ground for the design of diverse intelligence devices.
Nanopatterning Technologies of Two‐Dimensional Materials for Integrated Electronic and Optoelectronic Devices

Shenghong Liu,Jing Wang,Jiefan Shao,Decai Ouyang,Wenjing Zhang,Shiyuan Liu,Yuan Li,Tianyou Zhai

DOI: https://doi.org/10.1002/adma.202200734

IF: 29.4

2022-05-04

Advanced Materials

Abstract:With the reduction of feature size and increase of integration density, the traditional three‐dimensional (3D) semiconductors have been unable to meet the future requirements of chip integration. The current semiconductor fabrication technologies are approaching their physical limits based on the Moore's law. Two‐dimensional (2D) materials such as graphene, transitional metal dichalcogenides (TMDs), etc., are of great promise for future memory, logic, and photonic devices due to their unique and excellent properties. To prompt the 2D materials and devices from laboratory research stage to industrial integrated circuit‐level, it is necessary to develop advanced nanopatterning methods to obtain high‐quality, wafer‐scale and patterned 2D products. In this article, we review the recent development of nanopatterning technologies, particularly towards realizing the large‐scale practical application of 2D materials. Based on the technological progress, we further summarize the unique requirement and advances of the 2D integration process for logic, memory and optoelectronic devices. Finally, we prospect the opportunities and challenges of the nanopatterning technologies of 2D materials for future integrated chip devices. This article is protected by copyright. All rights reserved

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Monolithic-3D Integration with 2D Materials: Toward Ultimate Vertically-Scaled 3D-ICs

K. Parto,W. Cao,Junkai Jiang,K. Banerjee

DOI: https://doi.org/10.1109/S3S.2018.8640131

2018-10-01

Abstract:This paper evaluates the merits of incorporating two-dimensional (2D) materials into monolithic threedimensional integrated circuits (M3D-IC), in terms of overcoming the major drawbacks of current 3D-ICs, including low thermal process budget, inter-tier signal delay and chip overheating problems. Our analysis reveals for the first time that the 2D-based M3D integration can offer $ > 10 -$folds higher integration density compared with through-silicon-via (TSV)based 3D integration, and $ > 150$% integration density improvement w.r.t conventional M3D integration. Therefore, 2D materials provide a better platform, with respect to bulk materials (such as Si, Ge, etc.), for realizing ultra-high-density M3D-ICs for next-generation electronics.

Materials Science,Engineering
Two-dimensional devices and integration towards the silicon lines

Shuiyuan Wang,Xiaoxian Liu,Mingsheng Xu,Liwei Liu,Deren Yang,Peng Zhou

DOI: https://doi.org/10.1038/s41563-022-01383-2

IF: 41.2

2022-10-25

Nature Materials

Abstract:Despite technical efforts and upgrades, advances in complementary metal–oxide–semiconductor circuits have become unsustainable in the face of inherent silicon limits. New materials are being sought to compensate for silicon deficiencies, and two-dimensional materials are considered promising candidates due to their atomically thin structures and exotic physical properties. However, a potentially applicable method for incorporating two-dimensional materials into silicon platforms remains to be illustrated. Here we try to bridge two-dimensional materials and silicon technology, from integrated devices to monolithic 'on-silicon' (silicon as the substrate) and 'with-silicon' (silicon as a functional component) circuits, and discuss the corresponding requirements for material synthesis, device design and circuitry integration. Finally, we summarize the role played by two-dimensional materials in the silicon-dominated semiconductor industry and suggest the way forward, as well as the technologies that are expected to become mainstream in the near future.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter
AI for EDA/Physical Design: Driving the AI Revolution: The Crucial Role of 3D-IC

Erick Chao

DOI: https://doi.org/10.1145/3626184.3635275

2024-03-12

Abstract:3D Integrated Circuits (3D-ICs) represent a significant advancement in semiconductor technology, offering enhanced functionality in smaller form factors, improved performance, and cost reductions. These 3D-ICs, particularly those utilizing Through-Silicon Vias (TSVs), are at the forefront of industry trends. They enable the integration of system components from various process nodes, including analog and RF, without being limited to a single node. TSVs outperform wire-bonded System in Package (SiP) in terms of reduced (RLC) parasitics, offering better performance, more power efficiency, and denser implementation. Compared to silicon interposer methods, vertical 3D die stacking achieves higher integration levels, smaller sizes, and quicker design cycles. This presentation introduces a novel AI-driven method designed to tackle the challenges hindering the automation of 3D-IC design flows.

Computer Science,Engineering
An in-memory computing architecture based on a duplex two-dimensional material structure for in situ machine learning

Hongkai Ning,Zhihao Yu,Qingtian Zhang,Hengdi Wen,Bin Gao,Yun Mao,Yuankun Li,Ying Zhou,Yue Zhou,Jiewei Chen,Lei Liu,Wenfeng Wang,Taotao Li,Yating Li,Wanqing Meng,Weisheng Li,Yun Li,Hao Qiu,Yi Shi,Yang Chai,Huaqiang Wu,Xinran Wang

DOI: https://doi.org/10.1038/s41565-023-01343-0

IF: 38.3

2023-03-21

Nature Nanotechnology

Abstract:The growing computational demand in artificial intelligence calls for hardware solutions that are capable of in situ machine learning, where both training and inference are performed by edge computation. This not only requires extremely energy-efficient architecture (such as in-memory computing) but also memory hardware with tunable properties to simultaneously meet the demand for training and inference. Here we report a duplex device structure based on a ferroelectric field-effect transistor and an atomically thin MoS 2 channel, and realize a universal in-memory computing architecture for in situ learning. By exploiting the tunability of the ferroelectric energy landscape, the duplex building block demonstrates an overall excellent performance in endurance (>10 13 ), retention (>10 years), speed (4.8 ns) and energy consumption (22.7 fJ bit –1 μm –2 ). We implemented a hardware neural network using arrays of two-transistors-one-duplex ferroelectric field-effect transistor cells and achieved 99.86% accuracy in a nonlinear localization task with in situ trained weights. Simulations show that the proposed device architecture could achieve the same level of performance as a graphics processing unit under notably improved energy efficiency. Our device core can be combined with silicon circuitry through three-dimensional heterogeneous integration to give a hardware solution towards general edge intelligence.

materials science, multidisciplinary,nanoscience & nanotechnology
An Atomically Thin Optoelectronic Machine Vision Processor

Houk Jang,Chengye Liu,Henry Hinton,Min‐Hyun Lee,Haeryong Kim,Minsu Seol,Hyeon‐Jin Shin,Seongjun Park,Donhee Ham

DOI: https://doi.org/10.1002/adma.202002431

IF: 29.4

2020-07-23

Advanced Materials

Abstract:2D semiconductors, especially transition metal dichalcogenide (TMD) monolayers, are extensively studied for electronic and optoelectronic applications. Beyond intensive studies on single transistors and photodetectors, the recent advent of large‐area synthesis of these atomically thin layers has paved the way for 2D integrated circuits, such as digital logic circuits and image sensors, achieving an integration level of ≈100 devices thus far. Here, a decisive advance in 2D integrated circuits is reported, where the device integration scale is increased by tenfold and the functional complexity of 2D electronics is propelled to an unprecedented level. Concretely, an analog optoelectronic processor inspired by biological vision is developed, where 32 × 32 = 1024 MoS2 photosensitive field‐effect transistors manifesting persistent photoconductivity (PPC) effects are arranged in a crossbar array. This optoelectronic processor with PPC memory mimics two core functions of human vision: it captures and stores an optical image into electrical data, like the eye and optic nerve chain, and then recognizes this electrical form of the captured image, like the brain, by executing analog in‐memory neural net computing. In the highlight demonstration, the MoS2 FET crossbar array optically images 1000 handwritten digits and electrically recognizes these imaged data with 94% accuracy.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
(Invited) Two-Dimensional Neuromorphic Computing Materials and Devices

Mark C Hersam

DOI: https://doi.org/10.1149/ma2023-01131317mtgabs

2023-08-28

ECS Meeting Abstracts

Abstract:The exponentially improving performance of digital computers has recently slowed due to the speed and power consumption issues resulting from the von Neumann bottleneck. In contrast, neuromorphic computing aims to circumvent these limitations by spatially co-locating logic and memory. Beyond reducing power consumption, neuromorphic devices provide efficient architectures for image recognition, machine learning, and artificial intelligence [1]. This talk will explore how two-dimensional (2D) nanoelectronic materials enable gate-tunable neuromorphic devices [2]. For example, by utilizing self-aligned, atomically thin heterojunctions, dual-gated Gaussian transistors have been realized, which show tunable anti-ambipolarity for artificial neurons, competitive learning, spiking circuits, and mixed-kernel support vector machines [3]. In addition, field-driven defect motion in polycrystalline monolayer MoS 2 enables gate-tunable memristive phenomena that serve as the basis of hybrid memristor/transistor devices (i.e., 'memtransistors' [4]) that concurrently provide logic and data storage functions [5]. The planar geometry of memtransistors further allows multiple contacts and dual gating that mimic the behavior of biological systems such as heterosynaptic responses [6]. Moreover, control over polycrystalline grain structure enhances the tunability of potentiation and depression, which enables unsupervised continuous learning in spiking neural networks [7]. Overall, this work introduces foundational circuit elements for neuromorphic computing by utilizing the unique quantum characteristics of 2D nanoelectronic materials [8]. [1] V. K. Sangwan, et al. , Nature Nanotechnology, 15 , 517 (2020). [2] M. E. Beck, et al. , ACS Nano , 14 , 6498 (2020). [3] M. E. Beck, et al. , Nature Communications , 11 , 1565 (2020). [4] V. K. Sangwan, et al. , Nature , 554 , 500 (2018). [5] X. Yan, et al. , Advanced Materials , 34 , 2108025 (2022). [6] H.-S. Lee, et al. , Advanced Functional Materials , 30 , 2003683 (2020). [7] J. Yuan, et al. , Nano Letters , 21 , 6432 (2021). [8] X. Liu, et al. , Nature Reviews Materials , 4 , 669 (2019).
From lab to fab: path forward for 2D material electronics

Hongkai Ning,Zhihao Yu,Taotao Li,Haoliang Shen,Gen Long,Yi Shi,Xinran Wang

DOI: https://doi.org/10.1007/s11432-023-3752-3

2023-05-27

Science China Information Sciences

Abstract:The increasing demand for computation requires the development of energy-efficient logic devices with reduced dimensions. Owing to their atomic thickness, 2D semiconductors are expected to provide possible solutions at the sub-1 nm technology node. Furthermore, taking advantage of the van der Waals nature, the low-temperature back-end of line integration with silicon may occur in the near future. In this perspective, vital progress in material synthesis, device engineering, and integration technologies toward integrated circuits based on 2D materials is reviewed. The challenges and important milestones on the roadmap for the next decade toward the fab adoption of 2D materials are outlined. Particularly, performance, power, area, cost, and equipment for further technology development in this area are proposed as key metrics and enablers.

computer science, information systems,engineering, electrical & electronic

All-2D electronics for AI processing

Monolithic 3D integration of 2D materials-based electronics towards ultimate edge computing solutions

Hierarchical processing enabled by 2D ferroelectric semiconductor transistor for low-power and high-efficiency AI vision system

Vertical Integration of 2D Building Blocks for All‐2D Electronics

The Road for 2D Semiconductors in the Silicon Age

Monolithic 3D integration with 2D materials

The development of integrated circuits based on two-dimensional materials

Dielectric Engineered Two-Dimensional Neuromorphic Transistors

Neuromorphic Computing: Devices, Hardware, and System Application Facilitated by Two-Dimensional Materials

An in-memory computing architecture based on a duplex 2D material structure for in-situ machine learning

Neuromorphic Devices Based on Two-Dimensional Materials and Their Applications

A Case for 3D Integrated System Design for Neuromorphic Computing & AI Applications

2D Materials for Intelligent Devices

Nanopatterning Technologies of Two‐Dimensional Materials for Integrated Electronic and Optoelectronic Devices

Monolithic-3D Integration with 2D Materials: Toward Ultimate Vertically-Scaled 3D-ICs

Two-dimensional devices and integration towards the silicon lines

AI for EDA/Physical Design: Driving the AI Revolution: The Crucial Role of 3D-IC

An in-memory computing architecture based on a duplex two-dimensional material structure for in situ machine learning

An Atomically Thin Optoelectronic Machine Vision Processor

(Invited) Two-Dimensional Neuromorphic Computing Materials and Devices

From lab to fab: path forward for 2D material electronics