Strain engineering the properties of graphene and other two-dimensional crystals

Mark A. Bissett,Masaharu Tsuji,Hiroki Ago

DOI: https://doi.org/10.1039/c3cp55443k

2014-01-01

Phys. Chem. Chem. Phys.

Abstract:This perspective discusses recent advances in using strain to engineer the properties of thin-layer materials such as graphene and transition metal dichalcogenides (TMDs).

What problem does this paper attempt to address?

Strain engineering of 2D semiconductors and graphene: from strain fields to band-structure tuning and photonic applications

Zhiwei Peng,Xiaolin Chen,Yulong Fan,David J. Srolovitz,Dangyuan Lei

DOI: https://doi.org/10.1038/s41377-020-00421-5

2020-11-23

Light: Science and Applications

Abstract:Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDCs) and graphene compose a new family of crystalline materials with atomic thicknesses and exotic mechanical, electronic, and optical properties. Due to their inherent exceptional mechanical flexibility and strength, these 2D materials provide an ideal platform for strain engineering, enabling versatile modulation and significant enhancement of their optical properties. For instance, recent theoretical and experimental investigations have demonstrated flexible control over their electronic states via application of external strains, such as uniaxial strain and biaxial strain. Meanwhile, many nondestructive optical measurement methods, typically including absorption, reflectance, photoluminescence, and Raman spectroscopies, can be readily exploited to quantitatively determine strain-engineered optical properties. This review begins with an introduction to the macroscopic theory of crystal elasticity and microscopic effective low-energy Hamiltonians coupled with strain fields, and then summarizes recent advances in strain-induced optical responses of 2D TMDCs and graphene, followed by the strain engineering techniques. It concludes with exciting applications associated with strained 2D materials, discussions on existing open questions, and an outlook on this intriguing emerging field.
Strain Engineering: Electromechanical Properties of Graphene

Shuze Zhu

DOI: https://doi.org/10.1002/9781119468455.ch26

2019-01-01

Abstract:This chapter contains sections titled: The Era of Strain Engineering of Graphene Electronic Dispersion of Graphene and Dirac Fermions Dirac Fermions in External Magnetic Field and Landau Levels Dirac Hamiltonian of Graphene in Strain Field and Pseudomagnetic Field The Coupling between Strain Field and Hopping Energy The Coupling between Strain Field and Pseudomagnetic Field Pseudo Landau Levels and Pseudospin Polarization Strain-Induced Pseudomagnetic Field Greater Than 300 T Graphene Drumheads and On-Demand Activation of Pseudomagnetic Field Strain Engineering of Pseudomagnetic Field: Triaxial Stretching Strain Engineering of Pseudomagnetic Field: Uniaxial Stretching Strain Engineering towards Topological Insulators and Valleytronics Summary
Tuning the physical properties of ultrathin transition-metal dichalcogenides via strain engineering

Yalan Yan,Shuang Ding,Xiaonan Wu,Jian Zhu,Dengman Feng,Xiaodong Yang,Fangfei Li

DOI: https://doi.org/10.1039/d0ra07288e

IF: 4.036

2020-01-01

RSC Advances

Abstract:Transition-metal dichalcogenides (TMDs) have become one of the recent frontiers and focuses in two-dimensional (2D) materials fields thanks to their superior electronic, optical, and photoelectric properties. Triggered by the growing demand for developing nano-electronic devices, strain engineering of ultrathin TMDs has become a hot topic in the scientific community. In recent years, both theoretical and experimental research on the strain engineering of ultrathin TMDs have suggested new opportunities to achieve high-performance ultrathin TMDs based devices. However, recent reviews mainly focus on the experimental progress and the related theoretical research has long been ignored. In this review, we first outline the currently employed approaches for introducing strain in ultrathin TMDs, both their characteristics and advantages are explained in detail. Subsequently, the recent research progress in the modification of lattice and electronic structure, and physical properties of ultrathin TMDs under strain are systematically reviewed from both experimental and theoretical perspectives. Despite much work being done in this filed, reducing the distance of experimental progress from the theoretical prediction remains a great challenge in realizing wide applications of ultrathin TMDs in nano-electronic devices.
Manipulating 2D Materials through Strain Engineering

Xiangxiang Yu,Zhuiri Peng,Langlang Xu,Wenhao Shi,Zheng Li,Xiaohan Meng,Xiao He,Zhen Wang,Shikun Duan,Lei Tong,Xinyu Huang,Xiangshui Miao,Weida Hu,Lei Ye

DOI: https://doi.org/10.1002/smll.202402561

IF: 13.3

2024-06-02

Small

Abstract:This paper encapsulates the review's focus on recent advances in strain engineering of 2D layered materials like graphene, h‐BN, TMDs, and BP. It outlines the methods, effects on properties, and potential applications in devices, providing a roadmap for further research. This review explores the growing interest in 2D layered materials, such as graphene, h‐BN, transition metal dichalcogenides (TMDs), and black phosphorus (BP), with a specific focus on recent advances in strain engineering. Both experimental and theoretical results are delved into, highlighting the potential of strain to modulate physical properties, thereby enhancing device performance. Various strain engineering methods are summarized, and the impact of strain on the electrical, optical, magnetic, thermal, and valleytronic properties of 2D materials is thoroughly examined. Finally, the review concludes by addressing potential applications and challenges in utilizing strain engineering for functional devices, offering valuable insights for further research and applications in optoelectronics, thermionics, and spintronics.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Strain engineering in semiconducting two-dimensional crystals

Rafael Roldán,Andrés Castellanos-Gomez,Emmanuele Cappelluti,Francisco Guinea

DOI: https://doi.org/10.1088/0953-8984/27/31/313201

2015-07-22

Abstract:One of the fascinating properties of the new families of two-dimensional crystals is their high stretchability and the possibility to use external strain to manipulate, in a controlled manner, their optical and electronic properties. Strain engineering, understood as the field that study how the physical properties of materials can be tuned by controlling the elastic strain fields applied to it, has a perfect platform for its implementation in the atomically thin semiconducting materials. The object of this review is to give an overview of the recent progress to control the optical and electronics properties of 2D crystals, by means of strain engineering. We will concentrate on semiconducting layered materials, with especial emphasis in transition metal dichalcogenides (MoS2, WS2, MoSe2 and WSe2). The effect of strain in other atomically thin materials like black phosphorus, silicene, etc, is also considered. The benefits of strain engineering in 2D crystals for applications in nanoelectronics and optoelectronics will be revised, and the open problems in the field will be discussed.
Strain‐Engineered 2D Materials: Challenges, Opportunities, and Future Perspectives

Ajit Kumar Katiyar,Jong‐Hyun Ahn

DOI: https://doi.org/10.1002/smtd.202401404

IF: 12.4

2024-12-04

Small Methods

Abstract:Strain engineering is a powerful tool, that can strongly modulate the physical and physicochemical properties of 2D materials. Particularly, the lattice distortion‐induced modification in the electronic band structure enables the emergence of many excellent properties that greatly expand the applicability of 2D materials in the fields of flexible electronics, flexible photo‐/image‐sensors, flexible strain sensors, and wearable bioelectronics devices. Strain engineering is a powerful strategy that can strongly influence and tune the intrinsic characteristics of materials by incorporating lattice deformations. Due to atomically thin thickness, 2D materials are excellent candidates for strain engineering as they possess inherent mechanical flexibility and stretchability, which allow them to withstand large strains. The application of strain affects the atomic arrangement in the lattice of 2D material, which modify the electronic band structure. It subsequently tunes the electrical and optical characteristics, thereby enhances the performance and functionalities of the fabricated devices. Recent advances in strain engineering strategies for large‐area flexible devices fabricated with 2D materials enable dynamic modulation of device performance. This perspective provides an overview of the strain engineering approaches employed so far for straining 2D materials, reviewing their advantages and disadvantages. The effect of various strains (uniaxial, biaxial, hydrostatic) on the characteristics of 2D material is also discussed, with a particular emphasis on electronic and optical properties. The strain‐inducing methods employed for large‐area device applications based on 2D materials are summarized. In addition, the future perspectives of strain engineering in functional devices, along with the associated challenges and potential solutions, are also outlined.

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Strain-tuning of the electronic, optical, and vibrational properties of two-dimensional crystals

E. Blundo,E. Cappelluti,M. Felici,G. Pettinari,A. Polimeni

DOI: https://doi.org/10.1063/5.0037852

IF: 15

2021-06-01

Applied Physics Reviews

Abstract:The variegated family of two-dimensional (2D) crystals has developed rapidly since the isolation of its forerunner: Graphene. Their plane-confined nature is typically associated with exceptional and peculiar electronic, optical, magnetic, and mechanical properties, heightening the interest of fundamental science and showing promise for applications. Methods for tuning their properties on demand have been pursued, among which the application of mechanical stresses, allowed by the incredible mechanical robustness and flexibility of these atomically thin materials. Great experimental and theoretical efforts have been focused on the development of straining protocols and on the evaluation of their impact on the peculiar properties of 2D crystals, revealing a novel, alluring physics. The relevance held by strain for 2D materials is introduced in Sec. I. Sections II and III present the multiplicity of methods developed to induce strain, highlighting the peculiarities, effectiveness, and drawbacks of each technique. Strain has largely widened the 2D material phase space in a quasi-seamless manner, leading to new and rich scenarios, which are discussed in Secs. IV–VI of this work. The effects of strain on the electronic, optical, vibrational, and mechanical properties of 2D crystals are discussed, as well as the possibility to exploit strain gradients for single-photon emission, non-linear optics, or valley/spintronics. Quantitative surveys of the relevant parameters governing these phenomena are provided. This review seeks to provide a comprehensive state-of-the-art overview of the straining methods and strain-induced effects, and to shed light on possible future paths. The aims and developments, the tools and strategies, and the achievements and challenges of this research field are widely presented and discussed.

physics, applied
Strain engineering of two‐dimensional materials: Methods, properties, and applications

Shengxue Yang,Yujia Chen,Chengbao Jiang

DOI: https://doi.org/10.1002/inf2.12177

2021-03-02

InfoMat

Abstract:Abstract Two‐dimensional (2D) materials have attracted extensive research interests due to their excellent properties related to unique structure. Strain engineering, as an important strategy for tuning the lattice and electronic structure of 2D materials, has been widely used in the modulation of physical properties, which broadens their applications in flexible nanoelectronic and optoelectronic devices. In this review, we first summarize the methods of inducing strain to 2D materials and discuss the advantages and problems of various methods. We then introduce the strain‐induced effects on optical, electrical, and magnetic properties, together with the phase transition of 2D materials. Finally, we illustrate the potential applications of strained 2D materials and further look forward to their opportunities and challenges in practical applications in the future. image

materials science, multidisciplinary
Recent Progress in Strain Engineering on Van der Waals 2D Materials: Tunable Electrical, Electrochemical, Magnetic and Optical Properties

Yaping Qi,Mohammad A. Sadi,Dan Hu,Ming Zheng,Zhenping Wu,Yucheng Jiang,Yong P. Chen

DOI: https://doi.org/10.1002/adma.202205714

IF: 29.4

2022-08-14

Advanced Materials

Abstract:Strain engineering is a promising way to tune the electrical, electrochemical, magnetic, and optical properties of two‐dimensional (2D) materials, with the potential to achieve high‐performance 2D‐material‐based devices ultimately. This review discusses the experimental and theoretical results from recent advances in the strain engineering of 2D materials. We summarize some novel methods to induce strain and then highlight the tunable electrical, and optical/optoelectronic properties of 2D materials via strain engineering including particularly the previously less discussed strain tuning of superconducting, magnetic, and electrochemical properties. Also, the future perspectives of strain engineering are given for its potential applications in functional devices. The state of the survey presents the ever‐increasing advantages and popularity of strain engineering for tuning properties of 2D materials. It provides suggestions and insights for further research and applications in optical, electronic, and spintronic devices. This article is protected by copyright. All rights reserved

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Novel effects of strains in graphene and other two dimensional materials

B. Amorim,A. Cortijo,F. de Juan,A.G. Grushin,F. Guinea,A. Gutiérrez-Rubio,H. Ochoa,V. Parente,R. Roldán,P. San-Jose,J. Schiefele,M. Sturla,M.A.H. Vozmediano

DOI: https://doi.org/10.1016/j.physrep.2015.12.006

IF: 30.51

2016-03-01

Physics Reports

Abstract:The analysis of the electronic properties of strained or lattice deformed graphene combines ideas from classical condensed matter physics, soft matter, and geometrical aspects of quantum field theory (QFT) in curved spaces. Recent theoretical and experimental work shows the influence of strains in many properties of graphene not considered before, such as electronic transport, spin–orbit coupling, the formation of Moiré patterns and optics. There is also significant evidence of anharmonic effects, which can modify the structural properties of graphene. These phenomena are not restricted to graphene, and they are being intensively studied in other two dimensional materials, such as the transition metal dichalcogenides. We review here recent developments related to the role of strains in the structural and electronic properties of graphene and other two dimensional compounds.
Strain engineering of graphene on rigid substrates

Yang Zhang,Yanhan Jin,Jinglan Liu,Qianchen Ren,Zhengyang Chen,Yi Zhao,Pei Zhao

DOI: https://doi.org/10.1039/d2na00580h

IF: 5.598

2022-01-01

Nanoscale Advances

Abstract:Graphene with a large tensile strain is a promising candidate for the new “straintronics’’ applications. Current approaches of strain engineering on graphene are mainly realized by flexible or hollow substrates....
Mechanical Control of Graphene on Engineered Pyramidal Strain Arrays.

Stephen T. Gill,John H. Hinnefeld,Shuze Zhu,William J. Swanson,Teng Li,Nadya Mason

DOI: https://doi.org/10.1021/acsnano.5b00335

IF: 17.1

2015-01-01

ACS Nano

Abstract:Strain can tune desirable electronic behavior in graphene, but there has been limited progress in controlling strain in graphene devices. In this paper, we study the mechanical response of graphene on substrates patterned with arrays of mesoscale pyramids. Using atomic force microscopy, we demonstrate that the morphology of graphene can be controlled from conformal to suspended depending on the arrangement of pyramids and the aspect ratio of the array. Nonuniform strains in graphene suspended across pyramids are revealed by Raman spectroscopy and supported by atomistic modeling, which also indicates strong pseudomagnetic fields in the graphene. Our results suggest that incorporating mesoscale pyramids in graphene devices is a viable route to achieving strain-engineering of graphene.
Strain-modulated defect engineering of two-dimensional materials

Prosun Santra,Sadegh Ghaderzadeh,Mahdi Ghorbani-Asl,Hannu-Pekka Komsa,Elena Besley,Arkady V. Krasheninnikov

DOI: https://doi.org/10.1038/s41699-024-00472-x

IF: 10.516

2024-05-07

npj 2D Materials and Applications

Abstract:Strain- and defect-engineering are two powerful approaches to tailor the opto-electronic properties of two-dimensional (2D) materials, but the relationship between applied mechanical strain and behavior of defects in these systems remains elusive. Using first-principles calculations, we study the response to external strain of h -BN, graphene, MoSe 2 , and phosphorene, four archetypal 2D materials, which contain substitutional impurities. We find that the formation energy of the defect structures can either increase or decrease with bi-axial strain, tensile or compressive, depending on the atomic radius of the impurity atom, which can be larger or smaller than that of the host atom. Analysis of the strain maps indicates that this behavior is associated with the compressive or tensile local strains produced by the impurities that interfere with the external strain. We further show that the change in the defect formation energy is related to the change in elastic moduli of the 2D materials upon introduction of impurity, which can correspondingly increase or decrease. The discovered trends are consistent across all studied 2D materials and are likely to be general. Our findings open up opportunities for combined strain- and defect-engineering to tailor the opto-electronic properties of 2D materials, and specifically, the location and properties of single-photon emitters.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Strain Engineering in Functional 2-Dimensional Materials

Yufei Sun,Kai Liu

DOI: https://doi.org/10.1063/1.5053795

IF: 2.877

2018-01-01

Journal of Applied Physics

Abstract:Two-dimensional (2D) materials have attracted growing interest in the past decade because of their extraordinary properties and great potential in a wide range of applications. Strain is regarded as a simple yet powerful tool to modulate the properties of 2D materials, as it directly affects lattice structures and thus alters electronic structures. In this tutorial, we first discuss the fundamentals of strain engineering in 2D materials from macro and atomic perspective and then review some approaches to strain engineering as well as their merits and drawbacks. After that, we examine in detail how strain modulates physical and chemical properties in various types of 2D materials. In the last section of this tutorial, the applications of strain engineering in functional 2D materials are exhibited.
Perspective: strain and strain gradient engineering in membranes of quantum materials

Dongxue Du,Jiamian Hu,Jason K Kawasaki

DOI: https://doi.org/10.48550/arXiv.2302.07390

2023-02-14

Materials Science

Abstract:Strain is powerful for discovery and manipulation of new phases of matter; however, the elastic strains accessible to epitaxial films and bulk crystals are typically limited to small ($<2\%$), uniform, and often discrete values. This Perspective highlights new directions for strain and strain gradient engineering in free-standing single crystalline membranes of quantum materials. Membranes enable large ($\sim 10\%$), continuously tunable strains and strain gradients via bending and rippling. Moreover, strain gradients break inversion symmetry to activate polar distortions, ferroelectricity, chiral spin textures, novel superconductivity, and topological states. Recent advances in membrane synthesis by remote epitaxy and sacrificial etch layers enable extreme strains in new materials, including transition metal oxides and Heusler compounds, compared to natively van der Waals (vdW) materials like graphene. We highlight new opportunities and challenges for strain and strain gradient engineering in membranes of non-vdW materials.
Strain-engineering in two-dimensional transition metal dichalcogenide alloys

Leah Isseroff Bendavid,Yilin Zhong,Ziyi Che,Yagmur Konuk

DOI: https://doi.org/10.1063/5.0120484

IF: 2.877

2022-12-15

Journal of Applied Physics

Abstract:Two-dimensional (2D) transition metal dichalcogenides (TMDs) are attractive semiconductors for use in electronic, optoelectronic, and spintronic devices. This study examines how the electronic properties of 2D TMDs can be tuned for specific applications through a combination of alloying and applying strain. Group VIB TMDs (MoS 2 , MoSe 2 , WS 2 , and WSe 2 ) are alloyed by mixing in the metal or chalcogen sublattices. Density functional theory is used to model the structures of the alloys at varying compositions and examine the electronic structure of the alloys under biaxial tensile and compressive strain. Alloying results in the continuous monotonic tuning of the direct bandgap between the limits of the pure components, with low bowing coefficients for all alloys. Applying strain results in a transition of the bandgap from direct to indirect at low values of tensile strain and higher values of compressive strain. Strain can also be used to increase or decrease the bandgap with low compressive strain or tensile strain, respectively. The shift rate, or the rate at which the bandgap changes with applied strain, changes monotonically with alloy composition. MoS 2 is identified as the 2D TMD with the highest shift rate.

physics, applied
Strain engineering of two-dimensional materials for energy storage and conversion applications

Xing Peng,Long Chen,Yifan Liu,Chao Liu,Honglan Huang,Jinbo Fan,Pan Xiong,Junwu Zhu

DOI: https://doi.org/10.20517/cs.2023.34

2023-11-03

Chemical Synthesis

Abstract:Two-dimensional (2D) materials have garnered much interest due to their exceptional optical, electrical, and mechanical properties. Strain engineering, as a crucial approach to modulate the physicochemical characteristics of 2D materials, has been widely used in various fields, especially for energy storage and conversion. Herein, the recent progress in strain engineering of 2D materials is summarized for energy storage and conversion applications. The fundamental understanding of strain in 2D materials is first described. Then, some synthetic methods for modulating the properties of 2D materials via strain engineering are introduced. Further, the applications of strain engineering of 2D materials in energy storage, photocatalysis, and electrocatalysis are discussed. Finally, the challenges and perspectives on strain engineering of 2D materials are also outlined.
Strain-engineering on mechanical and electronic properties of group IV-V two-dimensional semiconductors

Tianyu Wang,Kun Lu,Zhimi Li,Xin Li,Linling Dai,Jiuren Yin,Ping Zhang,Yanhuai Ding

DOI: https://doi.org/10.1088/2053-1591/ac0366

IF: 2.025

2021-10-01

Materials Research Express

Abstract:Due to the attractive physical properties, group IV-V materials (A3B, A = C, Si, Ge and B = N, P, As) have been received much attention in recent years. In this paper, first-principles calculations have been performed to investigate the elastic and electrical properties in two-dimensional (2D) A3B materials. The in-plane stiffness, Poisson's ratio, Young's modulus and ultimate strength of monolayer A3Bs along armchair and zigzag direction are calculated. The band gap of monolayer C3N can be modified significantly by the application of strain engineering. We predicted the electron and hole mobility in the armchair (zigzag) direction, rather high and highly anisotropic. Monolayer Ge3N exhibits an extremely high electron mobility of along the zigzag direction. The high mobility and anisotropic characteristics endow A3Bs with many potential applications in the field of microelectronics and optoelectronic devices.

materials science, multidisciplinary
Engineering the Strain and Interlayer Excitons of 2D Materials via Lithographically Engraved Hexagonal Boron Nitride

Yu-Chiang Hsieh,Zhen-You Lin,Shin-Ji Fung,Wen-Shin Lu,Sheng-Chin Ho,Siang-Ping Hong,Sheng-Zhu Ho,Chiu-Hua Huang,Kenji Watanabe,Takashi Taniguchi,Yang-Hao Chan,Yi-Chun Chen,Chung-Lin Wu,Tse-Ming Chen

DOI: https://doi.org/10.1021/acs.nanolett.3c01208

IF: 10.8

2023-06-23

Nano Letters

Abstract:Strain engineering has quickly emerged as a viable option to modify the electronic, optical, and magnetic properties of 2D materials. However, it remains challenging to arbitrarily control the strain. Here we show that, by creating atomically flat surface nanostructures in hexagonal boron nitride, we achieve an arbitrary on-chip control of both the strain distribution and magnitude on high-quality molybdenum disulfide. The phonon and exciton emissions are shown to vary in accordance with our...

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology

Strain engineering the properties of graphene and other two-dimensional crystals

Strain engineering of 2D semiconductors and graphene: from strain fields to band-structure tuning and photonic applications

Strain Engineering: Electromechanical Properties of Graphene

Tuning the physical properties of ultrathin transition-metal dichalcogenides via strain engineering

Manipulating 2D Materials through Strain Engineering

Strain engineering in semiconducting two-dimensional crystals

Strain‐Engineered 2D Materials: Challenges, Opportunities, and Future Perspectives

Strain-tuning of the electronic, optical, and vibrational properties of two-dimensional crystals

Strain engineering of two‐dimensional materials: Methods, properties, and applications

Recent Progress in Strain Engineering on Van der Waals 2D Materials: Tunable Electrical, Electrochemical, Magnetic and Optical Properties

Novel effects of strains in graphene and other two dimensional materials

Strain engineering of graphene on rigid substrates

Mechanical Control of Graphene on Engineered Pyramidal Strain Arrays.

Strain-modulated defect engineering of two-dimensional materials

Strain Engineering in Functional 2-Dimensional Materials

Perspective: strain and strain gradient engineering in membranes of quantum materials

Strain-engineering in two-dimensional transition metal dichalcogenide alloys

Strain engineering of two-dimensional materials for energy storage and conversion applications

Strain-engineering on mechanical and electronic properties of group IV-V two-dimensional semiconductors

Engineering the Strain and Interlayer Excitons of 2D Materials via Lithographically Engraved Hexagonal Boron Nitride