Strain engineering of graphene on rigid substrates

Yang Zhang,Yanhan Jin,Jinglan Liu,Qianchen Ren,Zhengyang Chen,Yi Zhao,Pei Zhao

DOI: https://doi.org/10.1039/d2na00580h

IF: 5.598

2022-01-01

Nanoscale Advances

Abstract:Graphene with a large tensile strain is a promising candidate for the new “straintronics’’ applications. Current approaches of strain engineering on graphene are mainly realized by flexible or hollow substrates....

What problem does this paper attempt to address?

Mechanical Control of Graphene on Engineered Pyramidal Strain Arrays.

Stephen T. Gill,John H. Hinnefeld,Shuze Zhu,William J. Swanson,Teng Li,Nadya Mason

DOI: https://doi.org/10.1021/acsnano.5b00335

IF: 17.1

2015-01-01

ACS Nano

Abstract:Strain can tune desirable electronic behavior in graphene, but there has been limited progress in controlling strain in graphene devices. In this paper, we study the mechanical response of graphene on substrates patterned with arrays of mesoscale pyramids. Using atomic force microscopy, we demonstrate that the morphology of graphene can be controlled from conformal to suspended depending on the arrangement of pyramids and the aspect ratio of the array. Nonuniform strains in graphene suspended across pyramids are revealed by Raman spectroscopy and supported by atomistic modeling, which also indicates strong pseudomagnetic fields in the graphene. Our results suggest that incorporating mesoscale pyramids in graphene devices is a viable route to achieving strain-engineering of graphene.
Strain Engineering: Electromechanical Properties of Graphene

Shuze Zhu

DOI: https://doi.org/10.1002/9781119468455.ch26

2019-01-01

Abstract:This chapter contains sections titled: The Era of Strain Engineering of Graphene Electronic Dispersion of Graphene and Dirac Fermions Dirac Fermions in External Magnetic Field and Landau Levels Dirac Hamiltonian of Graphene in Strain Field and Pseudomagnetic Field The Coupling between Strain Field and Hopping Energy The Coupling between Strain Field and Pseudomagnetic Field Pseudo Landau Levels and Pseudospin Polarization Strain-Induced Pseudomagnetic Field Greater Than 300 T Graphene Drumheads and On-Demand Activation of Pseudomagnetic Field Strain Engineering of Pseudomagnetic Field: Triaxial Stretching Strain Engineering of Pseudomagnetic Field: Uniaxial Stretching Strain Engineering towards Topological Insulators and Valleytronics Summary
Uniaxial Strain on Graphene: Raman Spectroscopy Study and Band-Gap

Opening Zhen Hua Ni,Ting Yu,Yun Hao Lu,Ying Ying Wang,Yuan Ping Feng,Ze Xiang Shen

2008-01-01

Abstract:Graphene was deposited on a transparent andflexible substrate, and tensile strain up to0.8% was loaded by stretching the substrate in one direction. Raman spectra of strained graphene show significant red shifts of 2D and G band (27.8 and14.2 cm1per 1% strain, respectively) because of the elongation of the carboncarbon bonds. This indicates that uniaxial strain has been successfully applied on graphene. We also proposedthat,byapplyinguniaxialstrainongraphene,tunablebandgapatKpointcanberealized.First-principle calculations predicted a band-gap opening of300 meV for graphene under 1% uniaxial tensile strain. The strained graphene provides an alternative way to experimentally tune the band gap of graphene, which would be more efficient and more controllable than other methods that are used to open the band gap in graphene. Moreover,ourresultssuggestthattheflexiblesubstrateisreadyforsuchastrainprocess,andRamanspectroscopy can be used as an ultrasensitive method to determine the strain.
Strain engineering the properties of graphene and other two-dimensional crystals

Mark A. Bissett,Masaharu Tsuji,Hiroki Ago

DOI: https://doi.org/10.1039/c3cp55443k

2014-01-01

Phys. Chem. Chem. Phys.

Abstract:This perspective discusses recent advances in using strain to engineer the properties of thin-layer materials such as graphene and transition metal dichalcogenides (TMDs).
Tailoring mechanically-tunable strain fields in graphene

M. Goldsche,J. Sonntag,T. Khodkov,G. Verbiest,S. Reichardt,C. Neumann,T. Ouaj,N. von den Driesch,D. Buca,C. Stampfer

DOI: https://doi.org/10.1021/acs.nanolett.7b04774

2017-11-13

Abstract:There are a number of theoretical proposals based on strain engineering of graphene and other two-dimensional materials, however purely mechanical control of strain fields in these systems has remained a major challenge. The two approaches mostly used so far either couple the electrical and mechanical properties of the system simultaneously or introduce some unwanted disturbances due to the substrate. Here, we report on silicon micro-machined comb-drive actuators to controllably and reproducibly induce strain in a suspended graphene sheet, in an entirely mechanical way. We use spatially resolved confocal Raman spectroscopy to quantify the induced strain, and we show that different strain fields can be obtained by engineering the clamping geometry, including tunable strain gradients of up to 1.4 %/$\mu$m. Our approach also allows for multiple axis straining and is equally applicable to other two-dimensional materials, opening the door to an investigating their mechanical and electromechanical properties. Our measurements also clearly identify defects at the edges of a graphene sheet as being weak spots responsible for its mechanical failure.

Materials Science,Mesoscale and Nanoscale Physics,Applied Physics
Strain engineering of 2D semiconductors and graphene: from strain fields to band-structure tuning and photonic applications

Zhiwei Peng,Xiaolin Chen,Yulong Fan,David J. Srolovitz,Dangyuan Lei

DOI: https://doi.org/10.1038/s41377-020-00421-5

2020-11-23

Light: Science and Applications

Abstract:Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDCs) and graphene compose a new family of crystalline materials with atomic thicknesses and exotic mechanical, electronic, and optical properties. Due to their inherent exceptional mechanical flexibility and strength, these 2D materials provide an ideal platform for strain engineering, enabling versatile modulation and significant enhancement of their optical properties. For instance, recent theoretical and experimental investigations have demonstrated flexible control over their electronic states via application of external strains, such as uniaxial strain and biaxial strain. Meanwhile, many nondestructive optical measurement methods, typically including absorption, reflectance, photoluminescence, and Raman spectroscopies, can be readily exploited to quantitatively determine strain-engineered optical properties. This review begins with an introduction to the macroscopic theory of crystal elasticity and microscopic effective low-energy Hamiltonians coupled with strain fields, and then summarizes recent advances in strain-induced optical responses of 2D TMDCs and graphene, followed by the strain engineering techniques. It concludes with exciting applications associated with strained 2D materials, discussions on existing open questions, and an outlook on this intriguing emerging field.
Strain Modulation of Graphene by Nanoscale Substrate Curvatures: A Molecular View

Yingjie Zhang,Mohammad Heiranian,Blanka Janicek,Zoe Budrikis,Stefano Zapperi,Pinshane Y. Huang,Harley T. Johnson,Narayana R. Aluru,Joseph W. Lyding,Nadya Mason

DOI: https://doi.org/10.1021/acs.nanolett.8b00273

2018-03-05

Abstract:Spatially nonuniform strain is important for engineering the pseudomagnetic field and band structure of graphene. Despite the wide interest in strain engineering, there is still a lack of control on device-compatible strain patterns due to the limited understanding of the structure-strain relationship. Here, we study the effect of substrate corrugation and curvature on the strain profiles of graphene via combined experimental and theoretical studies of a model system: graphene on closely packed SiO2 nanospheres with different diameters (20-200 nm). Experimentally, via quantitative Raman analysis, we observe partial adhesion and wrinkle features and find that smaller nanospheres induce larger tensile strain in graphene, theoretically, molecular dynamics simulations confirm the same microscopic structure and size dependence of strain and reveal that a larger strain is caused by a stronger, inhomogeneous interaction force between smaller nanospheres and graphene. This molecular-level understanding of the strain mechanism is important for strain engineering of graphene and other two-dimensional materials.

Mesoscale and Nanoscale Physics
Design of Strain-Limiting Substrate Materials for Stretchable and Flexible Electronics

Yinji Ma,Kyung-In Jang,Liang Wang,Han Na Jung,Jean Won Kwak,Yeguang Xue,Hang Chen,Yiyuan Yang,Dawei Shi,Xue Feng,John A. Rogers,Yonggang Huang

DOI: https://doi.org/10.1002/adfm.201600713

IF: 19

2016-01-01

Advanced Functional Materials

Abstract:Recently developed classes of electronics for biomedical applications exploit substrates that offer low elastic modulus and high stretchability, to allow intimate, mechanically biocompatible integration with soft biological tissues. A challenge is that such substrates do not generally offer protection of the electronics from high peak strains that can occur upon large-scale deformation, thereby creating a potential for device failure. The results presented here establish a simple route to compliant substrates with strain-limiting mechanics based on approaches that complement those of recently described alternatives. Here, a thin film or mesh of a high modulus material transferred onto a prestrained compliant substrate transforms into wrinkled geometry upon release of the prestrain. The structure formed by this process offers a low elastic modulus at small strain due to the small effective stiffness of the wrinkled film or mesh; it has a high tangent modulus (e.g., > 1000 times the elastic modulus) at large strain, as the wrinkles disappear and the film/mesh returns to a flat geometry. This bilinear stress-strain behavior has an extremely sharp transition point, defined by the magnitude of the prestrain. A theoretical model yields analytical expressions for the elastic and tangent moduli and the transition strain of the bilinear stress-strain relation, with quantitative correspondence to finite element analysis and experiments.
On-Chip Rolling Design for Controllable Strain Engineering and Enhanced Photon-Phonon Interaction in Graphene

Lu Wang,Ziao Tian,Biran Zhang,Borui Xu,Tianbo Wang,Yang Wang,Shilong Li,Zengfeng Di,YongFeng Mei

DOI: https://doi.org/10.1002/smll.201805477

IF: 13.3

2019-01-01

Small

Abstract:On-chip strain engineering is highly demanded in 2D materials as an effective route for tuning their extraordinary properties and integrating consistent functionalities toward various applications. Herein, rolling technique is proposed for strain engineering in monolayer graphene grown on a germanium substrate, where compressive or tensile strain could be acquired, depending on the designed layer stressors. Unusual compressive strains up to 0.30% are achieved in the rolled-up graphene tubular structures. The subsequent phonon hardening under compressive loading is observed through strain-induced Raman G band splitting, while distinct blueshifts of characteristic peaks (G+ , G- , or 2D) can be well regulated on an asymmetric tubular structure with a strain variation. In addition, due to the strong confinement of the local electromagnetic field under 3D tubular geometry, the photon-phonon interaction is highly strengthened, and thus, the Raman scattering of graphene in rolled-up tubes is enhanced. Such an on-chip rolling approach leads to a superior strain tuning method in 2D materials and could improve their light-matter interaction in a tubular configuration, which may hold great capability in 2D materials integration for on-chip applications such as in mechanics, electronics, and photonics.
Graphene: Graphene Nanoribbons under Mechanical Strain (adv. Mater. 2/2015)

Changxin Chen,Justin Z. Wu,Kwok-Yan Lam,Guosong Hong,Ming Gong,Bo Zhang,Yang Lu,Alexander L. Antaris,Shuo Diao,Jing Guo,Hongjie Dai

DOI: https://doi.org/10.1002/adma.201570014

IF: 29.4

2015-01-01

Advanced Materials

Abstract:On page 303, C. Chen, J. Guo, H. Dai, and co-workers introduce uniaxial strains (0-6%) into individual graphene nanoribbons (GNRs) with highly smooth edges for the first time by atomic force microscopy manipulation and investigate strain effects on GNRs. It is found that uniaxial strain downshifts the Raman G-band frequency of GNRs linearly and tunes their bandgap significantly in a non-monotonic manner. Strain engineering of GNRs is demonstrated to be promising for modulating the properties of GNRs toward potential device applications.
Electronic Properties of Polycrystalline Graphene under Large Local Strain

Xin He,Li Gao,Ning Tang,Junxi Duan,Fuhong Mei,Hu Meng,Fangchao Lu,Fujun Xu,Xinqiang Wang,Xuelin Yang,Weikun Ge,Bo Shen

DOI: https://doi.org/10.1063/1.4883866

IF: 4

2014-01-01

Applied Physics Letters

Abstract:To explore the transport properties of polycrystalline graphene under large tensile strain, a strain device has been fabricated using piezocrystal to load local strain onto graphene, up to 22.5%. Ionic liquid gate whose capability of tuning carrier density being much higher than that of a solid gate is used to survey the transfer characteristics of the deformed graphene. The conductance of the Dirac point and field effect mobility of electrons and holes is found to decrease with increasing strain, which is attributed to the scattering of the graphene grain boundaries, the strain induced change of band structure, and defects. However, the transport gap is still not opened. Our study is helpful to evaluate the application of graphene in stretchable electronics.
Strain engineering on graphene towards tunable and reversible hydrogenation

Zhiping Xu,Kun Xue

DOI: https://doi.org/10.48550/arXiv.0904.2938

2009-04-20

Materials Science

Abstract:Graphene is the extreme material for molecular sensory and hydrogen storage applications because of its two-dimensional geometry and unique structure-property relationship. In this Letter, hydrogenation of graphene is discussed in the extent of intercoupling between mechanical deformation and electronic configuration. Our first principles calculation reveals that the atomic structures, binding energies, mechanical and electronic properties of graphene are significantly modified by the hydrogenation and applied strain. Under an in-plane strain of 10 %, the binding energies of hydrogen on graphene can be improved by 53.89 % and 23.56 % in the symmetric and anti-symmetric phase respectively. Furthermore the instability of symmetrically bound hydrogen atoms under compression suggests a reversible storage approach of hydrogen. In the anti-symmetric phase, the binding of hydrogen breaks the sp2 characteristic of graphene, which can be partly recovered at tensile strain. A charge density based analysis unveils the underline mechanisms. The results reported here offer a way not only to tune the binding of hydrogen on graphene in a controllable and reversible manner, but also to engineer the properties of graphene through a synergistic control through mechanical loads and hydrogen doping.
Stretching Graphene to 3.3% Strain Using Formvar-Reinforced Flexible Substrate

Y. Jin,Q. Ren,J. Liu,Y. Zhang,H. Zheng,P. Zhao

DOI: https://doi.org/10.1007/s11340-021-00817-3

IF: 2.794

2022-01-01

Experimental Mechanics

Abstract:Background As a one-atom-thick material, the mechanical loading of graphene in large scale remains a challenge, and the maximum tensile strain that can be realized is through a flexible substrate, but only with a value of 1.8% due to the weak interfacial stress transfer. Objective Aims to illustrate the interface reinforcement brought by formvar resins as a buffering layer between graphene and substrates. Methods Single crystal graphene transferred to different substrates, applied with uniaxial stretching to compare the interface strength, and finite element analysis was performed to simulate tensile process for studying the influence of Poisson’s ratio of the buffering layer for interface reinforcement. Results In this work we use formvar resins as a buffering layer to achieve a maximum uniaxial tensile strain of 3.3% in graphene, close to the theoretical limit (3.7%) that graphene can achieve by flexible substrate stretching. The interface reinforcement by formvar is significantly higher than that by other polymers, which is attributed to the liquid–solid phase transition of formvar for more conformal interfacial contact and its suitable Poisson’s ratio with graphene to avoid its buckling along the transverse direction. Conclusions We believe that these results can provide guidance for the design of substrates and interfaces for graphene loading, as well as the support for mechanics analysis of graphene-based flexible electronic devices.
Straintronics in graphene: Extra large electronic band gap induced by tensile and shear strains

Ihor Yu. Sahalianov,Taras M. Radchenko,Valentyn A. Tatarenko,Gianaurelio Cuniberti,Yuriy I. Prylutskyy

DOI: https://doi.org/10.1063/1.5095600

IF: 2.877

2019-08-07

Journal of Applied Physics

Abstract:The possibility of inducing a sizeable energy gap in the electronic structure of a graphene layer is still one of the biggest and most debated challenges in graphene electronics. Despite promising theoretical results, some experimental studies report the absence of a bandgap even in highly mechanically strained graphene. In this paper, we address the main reasons for these discrepancies and study the influence of uniaxial tensile and shear strains as well as their combinations on the eventual bandgap opening in monolayer graphene. Deformation-dependent bandgap diagrams are constructed over a wide range of the strain tensor parameters of up to 26%, which is close to predicted graphene breaking point. The use of a combination of shear strain and uniaxial tensile deformations is found to be the easiest way for bandgap opening and tuning. The results of our numerical calculations demonstrate that shear strains can induce a bandgap of up to 4 eV at the largest elastic deformations, while a combination of shear and uniaxial strains can provide an energy gap of up to 6 eV that is substantially higher than for some materials (including silicon) typically used in nanoelectronic devices. The numerically obtained findings are carefully contrasted with other results available in the literature.

physics, applied
Fundamental Insights into Graphene Strain Sensing

Mufeng Liu,Zheling Li,Xin Zhao,Robert J. Young,Ian A. Kinloch

DOI: https://doi.org/10.1021/acs.nanolett.0c04577

IF: 10.8

2020-12-29

Nano Letters

Abstract:Graphene has been studied extensively for use in flexible electronics as ultrasensitive and wide-area strain sensors. Many sensors demonstrated so far rely on graphene networks, such that the spatial resolution is compromised, and they are unable to measure strain variations on a fine scale such as those resulting from substrate/interface failure. In this study, mono-/few-layer graphene are demonstrated to be good candidates for strain sensing with high spatial resolution to evaluate features <100 nm. The fundamentals of strain sensing–interaction with the target—have been discussed to shed light on the sensitivity and durability for future sensor fabrication. The proof-of-concept strain sensors have been shown to be able to monitor different states, e.g., the initiation and evolution, of crazes. The analysis also leads to the evaluation of interfacial energy and realization of high local strain in graphene that is applicable for other 2D materials for ultrasensitive strain sensing and bandgap opening applications.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.nanolett.0c04577?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.nanolett.0c04577</a>.Experimental method; Raman spectroscopy; deformation test monitored in situ by Raman spectroscopy and shear-lag analysis; craze analysis; energy criterion; application of the modeling on different flakes; applications of strain sensors; strategies for controlled bandgap opening (<a class="ext-link" href="/doi/suppl/10.1021/acs.nanolett.0c04577/suppl_file/nl0c04577_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Graphene Nanoribbons under Mechanical Strain.

Changxin Chen,Justin Zachary Wu,Kai Tak Lam,Guosong Hong,Ming Gong,Bo Zhang,Yang Lu,Alexander L Antaris,Shuo Diao,Jing Guo,Hongjie Dai

DOI: https://doi.org/10.1002/adma.201403750

2014-01-01

Abstract:Uniaxial strains are introduced into individual graphene nanoribbons (GNRs) with highly smooth edges to investigate the strain effects on Raman spectroscopic and electrical properties of GNRs. It is found that uniaxial strain downshifts the Raman G-band frequency of GNRs linearly and tunes their bandgap significantly in a non-monotonic manner. The strain engineering of GNRs is promising for potential electronics and photonics applications.
Strain Engineering Water Transport in Graphene Nanochannels.

Wei Xiong,Jefferson Zhe Liu,Ming Ma,Zhiping Xu,John Sheridan,Quanshui Zheng

DOI: https://doi.org/10.1103/physreve.84.056329

2011-01-01

Abstract:Using equilibrium and nonequilibrium molecular dynamic simulations, we found that engineering the strain on the graphene planes forming a channel can drastically change the interfacial friction of water transport through it. There is a sixfold change of interfacial friction stress when the strain changes from -10% to 10%. Stretching the graphene walls increases the interfacial shear stress, while compressing the graphene walls reduces it. Detailed analysis of the molecular structure reveals the essential roles of the interfacial potential energy barrier and the structural commensurateness between the solid walls and the first water layer. Our results suggest that the strain engineering is an effective way of controlling the water transport inside nanochannels. The resulting quantitative relations between shear stress and slip velocity and the understanding of the molecular mechanisms will be invaluable in designing graphene nanochannel devices.
Tuning the Graphene Work Function by Uniaxial Strain

Xin He,Ning Tang,Xiaoxiao Sun,Lin Gan,Fen Ke,Tao Wang,Fujun Xu,Xinqiang Wang,Xuelin Yang,Weikun Ge,Bo Shen

DOI: https://doi.org/10.1063/1.4906995

IF: 4

2015-01-01

Applied Physics Letters

Abstract:Forming good metal/graphene contact is of significance in making graphene devices, while tuning the graphene work function is a valid approach to decrease the contact barrier and then achieve electrodes with low contact resistance. A strain device has been fabricated to apply uniaxial strain to graphene grown by chemical vapor deposition method, and Kelvin probe force microscopy was used to measure the work function of the graphene under strain. The work function of the graphene is found to increase as strain increases. By applying a uniaxial strain of 7%, the work function can be adjusted as large as 0.161 eV. Such a result can be explained by strain induced increase of the density of states in graphene.
Manipulating 2D Materials through Strain Engineering

Xiangxiang Yu,Zhuiri Peng,Langlang Xu,Wenhao Shi,Zheng Li,Xiaohan Meng,Xiao He,Zhen Wang,Shikun Duan,Lei Tong,Xinyu Huang,Xiangshui Miao,Weida Hu,Lei Ye

DOI: https://doi.org/10.1002/smll.202402561

IF: 13.3

2024-06-02

Small

Abstract:This paper encapsulates the review's focus on recent advances in strain engineering of 2D layered materials like graphene, h‐BN, TMDs, and BP. It outlines the methods, effects on properties, and potential applications in devices, providing a roadmap for further research. This review explores the growing interest in 2D layered materials, such as graphene, h‐BN, transition metal dichalcogenides (TMDs), and black phosphorus (BP), with a specific focus on recent advances in strain engineering. Both experimental and theoretical results are delved into, highlighting the potential of strain to modulate physical properties, thereby enhancing device performance. Various strain engineering methods are summarized, and the impact of strain on the electrical, optical, magnetic, thermal, and valleytronic properties of 2D materials is thoroughly examined. Finally, the review concludes by addressing potential applications and challenges in utilizing strain engineering for functional devices, offering valuable insights for further research and applications in optoelectronics, thermionics, and spintronics.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Greater than 5 Percent Compressive Strain in Graphene via the Self Rolled up Membrane Platform

Paul Froeter,Parsian Moseni,Apratim Khandelwal,Xiuling Li

DOI: https://doi.org/10.48550/arXiv.2206.01650

2022-06-03

Abstract:Graphene is an atomically thin metallic membrane capable of sustaining reversible strain and offers a tempting prospect of controlling its optoelectronic properties via strain. Graphenes exceptional mechanical flexibility and tensile strength provide a lot of room for strain engineering. Here we use the self-rolled-up membrane platform for strain engineering and integration of graphene with stressed dielectric thin films. Graphene rolls up or down together with the stressed film upon releasing from the substrate and the curvature of the rolled-up film stack enables the strain tuning of the graphene monolayer. Raman spectroscopy was used to characterize the uniaxial strain in rolled up graphene by quantifying the red shift and splitting of the G peak in the doubly degenerate E2g optical mode. Approximately 5 percent compressive strain is realized using a SRuM diameter of roughly 2 microns. By reducing the diameter of the SRuM structure, even higher strain level can be reached. The SRuM approach can also be readily applied to induce strain in other materials beyond the level that can be achieved using conventional approaches.

Mesoscale and Nanoscale Physics

Strain engineering of graphene on rigid substrates

Mechanical Control of Graphene on Engineered Pyramidal Strain Arrays.

Strain Engineering: Electromechanical Properties of Graphene

Uniaxial Strain on Graphene: Raman Spectroscopy Study and Band-Gap

Strain engineering the properties of graphene and other two-dimensional crystals

Tailoring mechanically-tunable strain fields in graphene

Strain engineering of 2D semiconductors and graphene: from strain fields to band-structure tuning and photonic applications

Strain Modulation of Graphene by Nanoscale Substrate Curvatures: A Molecular View

Design of Strain-Limiting Substrate Materials for Stretchable and Flexible Electronics

On-Chip Rolling Design for Controllable Strain Engineering and Enhanced Photon-Phonon Interaction in Graphene

Graphene: Graphene Nanoribbons under Mechanical Strain (adv. Mater. 2/2015)

Electronic Properties of Polycrystalline Graphene under Large Local Strain

Strain engineering on graphene towards tunable and reversible hydrogenation

Stretching Graphene to 3.3% Strain Using Formvar-Reinforced Flexible Substrate

Straintronics in graphene: Extra large electronic band gap induced by tensile and shear strains

Fundamental Insights into Graphene Strain Sensing

Graphene Nanoribbons under Mechanical Strain.

Strain Engineering Water Transport in Graphene Nanochannels.

Tuning the Graphene Work Function by Uniaxial Strain

Manipulating 2D Materials through Strain Engineering

Greater than 5 Percent Compressive Strain in Graphene via the Self Rolled up Membrane Platform