Greater than 5 Percent Compressive Strain in Graphene via the Self Rolled up Membrane Platform

Paul Froeter,Parsian Moseni,Apratim Khandelwal,Xiuling Li

DOI: https://doi.org/10.48550/arXiv.2206.01650

2022-06-03

Abstract:Graphene is an atomically thin metallic membrane capable of sustaining reversible strain and offers a tempting prospect of controlling its optoelectronic properties via strain. Graphenes exceptional mechanical flexibility and tensile strength provide a lot of room for strain engineering. Here we use the self-rolled-up membrane platform for strain engineering and integration of graphene with stressed dielectric thin films. Graphene rolls up or down together with the stressed film upon releasing from the substrate and the curvature of the rolled-up film stack enables the strain tuning of the graphene monolayer. Raman spectroscopy was used to characterize the uniaxial strain in rolled up graphene by quantifying the red shift and splitting of the G peak in the doubly degenerate E2g optical mode. Approximately 5 percent compressive strain is realized using a SRuM diameter of roughly 2 microns. By reducing the diameter of the SRuM structure, even higher strain level can be reached. The SRuM approach can also be readily applied to induce strain in other materials beyond the level that can be achieved using conventional approaches.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is how to apply tunable compressive strain to graphene through the self - rolled - up membrane (S - RuM) platform to regulate its photoelectric properties. Specifically, the researchers hope to achieve the following goals through this method:

1. **Introduce and control uniaxial strain in graphene**: Utilize stress - driven self - rolled - up membrane technology to make graphene curl together with the stressed silicon nitride (SiNₓ) thin film, thereby introducing controllable uniaxial compressive strain in graphene.

2. **Verify the influence of strain on the optical and electrical properties of graphene**: Through Raman spectroscopy analysis, study the influence of strain on the splitting and red - shift of the G - band in graphene, and then quantitatively characterize the strain level.

3. **Explore the application potential of strain engineering**: Demonstrate the advantages of this method in achieving high - strain levels, and explore its application potential in other two - dimensional materials (such as MoS₂), as well as its potential applications in fields such as ultra - compact inductors and microfluidic - channel biosensors.

### Main problems and solutions

- **Problem**: Traditional strain - introduction methods are complex and easily damage the quality of graphene, limiting the study of strain effects.
- **Solution**: Use the self - rolled - up membrane platform. Release the graphene/SiNₓ bilayer structure through a simple wet - etching process, making it spontaneously curl into microtubes, thereby introducing compressive strain of up to 5% in graphene. By adjusting the microtube diameter, the strain level can be further increased.

### Key technical points

- **Self - rolled - up membrane platform (S - RuM)**: Utilize the stress - driven self - rolling mechanism to combine graphene with the stressed SiNₓ thin film to form a microtube structure.
- **Raman spectroscopy analysis**: Quantitatively characterize the strain level in graphene through the G - band splitting and red - shift phenomena in Raman spectroscopy.

### Application prospects

This method not only provides a new approach for graphene strain engineering but also shows the potential for achieving similar strain control in other two - dimensional materials, and is expected to be applied in fields such as ultra - compact inductors, microfluidic - channel biosensors, curled transistors, and microcavity optical resonators.