Abstract:The incessant reduction of transistor dimensions requires new transformations in devices or novel materials to further sustain Moore's law. From the 5 nm technology node and beyond, the gate-all-around field effect transistor (GAAFET) dominates the semiconductor industry, owing to its ultimate gate electrostatic controllability. Two-dimensional (2D) materials possess the merits of dangling-bond-free surfaces, atomic thicknesses down to sub-1 nm, and high mobility maintenance at sub-1 nm thickness, which are challenges long plaguing traditional three-dimensional (3D) semiconductors. Herein, we devised a double-gated GAAFET (DG GAAFET) based on monolayer MoS2. Compared with a DG GAAFET based on Si with the same footprint, the MoS2 DG GAAFET demonstrates the capability of suppressing short-channel effects out of the regime of the Si DG GAAFET, though a relatively small I-on value, which is attributed to the lower density of states, has been obtained in the monolayer MoS2 DG GAAFET. A single-gated GAAFET based on monolayer MoS2 (MoS2 SG GAAFET) has also been simulated as a control device, which manifests an inferior device performance and degraded short-channel effects compared to those of the MoS2 DG GAAFET, which are revealed by larger SS and a reduced I-on/I-off ratio. It is verified to be feasible to surge I-on by 84% without short-channel effect degradation via the incorporation of an additional channel, bobbing well for the application of the DG GAAFET device based on 2D materials in high-performance electronics. Besides, a logic inverter based on a double-channeled double-gated GAAFET (DG DC GAAFET) based on WSe2 and MoS2 has been simulated, and a voltage gain of 36 has been obtained under a gate voltage of 2 V. Moreover, an additional degree of freedom can be introduced by adding a SiO2 interlayer, which contributes to the subthreshold voltage matching between a MoS2 n-type transistor and a WSe2 p-type transistor, where a voltage gain of 45 at a gate voltage of 2 V has been obtained. Both the above complementary metal-oxide-semiconductor (CMOS) inverter structures can make full play of the inner areas of the GAA structure, which sheds light on the footprint decrease of inverters, leaving room for more electronics to be crammed into a single chip.

A Novel Scheme for Full Bottom Dielectric Isolation in Stacked Si Nanosheet Gate-All-Around Transistors

Bottom P-I-n Isolation Enabling GAA Nanosheet Transistor for Low-Power Applications

Design Technology Co-Optimization for Gate-All-Around Nanosheet Transistors Considering Source/Drain Confinement and Post- Gate Single Diffusion Break

Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices

Stacked Si Nanosheets Gate-All-Around Transistors with Silicon-on-Nothing Structure for Suppressing Parasitic Effects and Improving Circuits' Performance

Novel Postgate Single Diffusion Break Integration in Gate-All-Around Nanosheet Transistors to Achieve Remarkable Channel Stress for N/P Current Matching

Reverse Conducting Double Gate Lateral Insulated Gate Bipolar Transistor in Soi Based Technology

Optimization of Gate-All-Around Device to Achieve High Performance and Low Power with Low Substrate Leakage

Leakage and Thermal Reliability Optimization of Stacked Nanosheet Field-Effect Transistors with SiC Layers

Source/Drain Trimming Process to Improve Gate-All-Around Nanosheet Transistors Switching Performance and Enable More Stacks of Nanosheets

A Novel Si Nanosheet Channel Release Process for the Fabrication of Gate-All-Around Transistors and Its Mechanism Investigation

Design-Technology Co-Optimization for Stacked Nanosheet Oxide Channel Transistors in Monolithic 3D Integrated Circuit Design

Optimization of zero-level interlayer dielectric materials for gate-all-around silicon nanowire channel fabrication in a replacement metal gate process

Short-Channel Effect Suppression and Footprint Reduction in Double Gate-All-Around Field Effect Transistors and Inverters Based on Two-Dimensional Materials

Si Interlayers Trimming Strategy in Gate-All-Around Device Architecture for Si and SiGe Dual-Channel CMOS Integration

SiC Double Trench MOSFET with Split Gate and Integrated Schottky Barrier Diode for Ultra-Low Power Loss and Improved Short-Circuit Capability

Strained Si Nanosheet pFET Based on SiC Strain Relaxed Buffer Layer for High Performance and Low Power Logic Applications

Performance Enhancement of FinFET Devices with Gate-Stack (GS) High-K Dielectrics for Nanoscale Applications

DDDMOSFET Performance Improvement by Gate Oxide Removal Followed by Silicided Source/Drain Formation in Gate Slots

Novel Reconfigurable Field-Effect Transistor with Surrounded Source/Drain to Improve On-State Current

A Novel Split-Gate-Trench MOSFET Integrated With Normal Gate and Built-In Channel Diode