Abstract:One of the major bottlenecks in the commercialization of micro-light-emitting diodes (micro-LEDs) displays is the “massive transfer”. Monolithic integration of the driving element and the micro-LED pixel can radically avoid the technical problem of massive transfer. In this paper, the integrated device was fabricated on a gallium nitride (GaN) substrate. The device uses graphene as the channel material for the driving field-effect transistors (FETs) to control the micro-LEDs. However, in the traditional process, the residue of the ultraviolet photoresist on the surface of the graphene will cause severe doping, which resulting in the inferior performance of the fabricated graphene FETs (GFETs) device. To get higherperformance integrated devices, a new process method was intended in this paper. The performance of the GFETs was enhanced by optimizing the fabrication process, and the current control range of the GFETs for micro-LED was up to 11mA. The new process method adopts the PMMA thin film underlayer photolithography method, which effectively avoids the severe doping problem caused by ultraviolet photoresist residues on the graphene surface when fabricating GFETs for integrated devices. Based on the new fabricating technology, the transconductance and carrier mobility of GFETs had significantly enhanced. In conclusion, this research further expands the application of two-dimensional materials in the field of optoelectronic displays. Furthermore, the application of the new fabrication process of the integrated devices can be used as a technology accumulation to promote the commercialization of micro-LEDs.

Tunnel junction-enabled monolithically integrated GaN micro-light emitting transistor

Tunnel Junction-Enabled Monolithically Integrated GaN Micro-Light Emitting Transistor

Monolithic Integration of GaN-Based Transistors and Micro-LED

Monolithic integration of GaN-based green micro-LED and quasi-vertical MOSFET utilizing a hybrid tunnel junction

Graphene/p-AlGaN/p-GaN Electron Tunnelling Light Emitting Diodes with High External Quantum Efficiency

GaN micro-LED/GFET monolithic integrated display pixels fabricated with new processing technology

GaN-Based Micro-Light-Emitting Diode Driven by a Monolithic Integrated Ultraviolet Phototransistor

Wafer-Scale Monolithic Integration of LEDs with p-GaN-Depletion MOSFETs on a GaN LED Epitaxial Layer

Hybrid Tunnel Junction–Graphene Transparent Conductive Electrodes for Nitride Lateral Light Emitting Diodes

High-efficiency Green Micro-Leds with GaN Tunnel Junctions Grown Hybrid by PA-MBE and MOCVD

P‐11.10: Design and performance simulation study of optoelectronic co‐modulated Full GaN LET

GdN Nanoisland-Based GaN Tunnel Junctions

Direct Epitaxial Approach to Achieve a Monolithic On-Chip Integration of a HEMT and a Single Micro-LED with a High-Modulation Bandwidth

P‐9.2: GaN HEMT‐LED Homogeneous Integration for Micro‐LED Mass Transferring

Low-Leakage High-Breakdown Laterally Integrated HEMT-LED via n-GaN Electrode

Design and Photomodulation Performance of a UV-Driven Full GaN Integrated μLED and BJT Phototransistor

n+/p+ GaN and n+/p+ Al0.10Ga0.90N tunnel junctions: a promising alternative for hole injection in deep ultraviolet light-emitting diodes

Enhanced Performance of GaN-Based Single Contact Micro-LED Driven by AC Power Utilizing the Tunnel Junction

Design and Demonstration of Ultra Wide Bandgap AlGaN Tunnel Junctions

InGaN-based blue, green monolithic micro-LED display with n-type interlayer

Activation of buried p-GaN through nanopipes in large-size GaN-based tunnel junction LEDs