Abstract:The study has developed a roll‐to‐plate (R2P) transfer technique with overlay alignment capabilities, where gradual positional errors are analyzed during micro‐LED transfer and present a straightforward solution. As a demonstration, micro‐LEDs are successfully transferred to a transparent circuit board (TCB), achieving a transparent display with 72.5% transparency. Transparent displays are crucial for various applications, particularly for their potential use as windows in future self‐driving cars. These displays require high transparency, low power consumption, and high mechanical reliability. Micro‐LEDs have emerged as ideal devices for the transparent displays. Efficient mass‐production processes are essential for the commercialization of transparent micro‐LED displays. This study presents roll‐based mass transfer to enhance the productivity of transparent micro‐LED displays. Roll transfer processes traditionally face resolution challenges in alignment repeatability and positional errors in both the transverse direction (TD) and machine direction (MD). This study proposes a roll‐to‐plate (R2P) transfer process with overlay alignment to improve the repeatability precision of the alignment. Detailed experimental analyses address positional errors in the TD and MD, attributed to initial contact errors and linear velocity asynchrony, respectively. The results demonstrate successful micro‐LED transfer onto a transparent circuit board (TCB) with a maximum positional error of 3.2 μm and a 99.75% yield. The resulting micro‐LED display achieves a transparency of 72.5% with 68 pixels per inch. This study overcomes the alignment challenges in the R2P process and contributes to the commercialization of transparent micro‐LED displays. It is expected to positively impact the manufacturing of transparent applications that involve rolling processes.

P‐9.2: GaN HEMT‐LED Homogeneous Integration for Micro‐LED Mass Transferring

Mass transfer for Micro-LED display: Transfer printing techniques

P‐6.8: Study of Mass Transfer for Micro‐LED Manufacturing

Micro-LED Mass Transfer Technologies

GaN micro-LED/GFET monolithic integrated display pixels fabricated with new processing technology

P‐5.6: 5um Micro‐LED Display Adopting Mass Transfer Technology and Characteristics of GaN Micro‐LED on it

Mass transfer, detection and repair technologies in micro-LED displays

An Alternative Micro LED Mass Transfer Technology: Self-Assembly

Research on monolithic integrated driver of Micro LED

Monolithic Integration of GaN-Based Transistors and Micro-LED

84‐4: Transfer of Flip‐Chip Structure micro‐LED from Sapphire to Thin Film

Super retina TFT based full color microLED display via laser mass transfer

P‐10.1: Transfer Process of Micro‐LED Using Laser

Highly Effective Transfer of Micro-LED Pixels to Intermediate and Rigid Substrate with Weak and Tunable Adhesion by Thiol Modification

High-yield Micro-LED laser transfer accomplished using an ablation-type release material

Direct Epitaxial Approach to Achieve a Monolithic On-Chip Integration of a HEMT and a Single Micro-LED with a High-Modulation Bandwidth

Ultra-high brightness Micro-LEDs with wafer-scale uniform GaN-on-silicon epilayers

Monolithic integration of GaN-based green micro-LED and quasi-vertical MOSFET utilizing a hybrid tunnel junction

Monolithically Integrated μ LEDs/HEMTs Microdisplay on a Single Chip by a Direct Epitaxial Approach

Transfer of Micro‐LEDs with Roll‐Based Direct Overlay Alignment for Manufacturing Transparent Displays

Tunnel Junction-Enabled Monolithically Integrated GaN Micro-Light Emitting Transistor