Abstract:Micro‐LEDs are transferred from the growth substrate to the driver substrate using thin‐film assisted laser transfer and bonding technology. The transfer of Micro‐LEDs is achieved by laser‐assisted disintegration of the film. Thin‐film assisted transfer can be achieved at any pitch. Repair of dead spots after transfer can achieve 100% yield. Film‐assisted transfer reduces contact with the chip and minimizes damage. Micro‐Light Emitting Diodes (Micro‐LEDs) are key components in the field of next‐generation display technologies. In the process of making Micro‐LED displays, millions of chips need to be transferred to the driver substrate using mass transfer technology. Conventional transfer techniques, such as stamp transfer, present challenges in terms of processing efficiency and applicability due to the need for pre‐prepared tethered structures and fixed chip pitch. To overcome these limitations, the t hin‐film‐assisted laser transfer and bonding (TFA‐LTAB) technology is proposed. This technique is able to efficiently and accurately transfer Micro‐LEDs from the source substrate to the driver substrate with arbitrary pitch through thin‐film assistance, and electrically connects the chips through flip‐chip bonding technology, which significantly improves the efficiency and reliability of the transfer and joining. The TFA‐LTAB method proposed in this study integrates laser transfer and flip‐chip bonding techniques. Through the TFA‐LTAB process, these Micro‐LEDs cultured on sapphire substrates are precisely assembled onto transparent low‐temperature polycrystalline silicon thin‐film transistors (LTPS‐TFTs). The method successfully achieved mass transfer and bonding of Micro‐LEDs with a size of 30 × 15 μm2 at low temperature (180 °C) and low pressure (0.08 MPa).

Highly Effective Transfer of Micro-LED Pixels to Intermediate and Rigid Substrate with Weak and Tunable Adhesion by Thiol Modification

Highly Effective Transfer of Micro-Led Pixels to the Intermediate and Rigid Substrate with Weak and Tunable Adhesion by Thiol Modification

Laser-driven Programmable Non-Contact Transfer Printing of Objects Onto Arbitrary Receivers Via an Active Elastomeric Microstructured Stamp

Mass transfer for Micro-LED display: Transfer printing techniques

25.6: A Study on Micro‐LED Stamp Transfer Technology: Requirement and Challenges

High-yield Micro-LED laser transfer accomplished using an ablation-type release material

Advanced Mechanical Transfer of Micro-LEDs Enabled by Structurally Modified Wide Sapphire Nanomembranes through Thermal Reflow of Photoresist.

Thin‐Film Assisted Laser Transfer and Bonding (TFA‐LTAB) for the Fabrication of Micro‐LED Displays

Improved Indium Bumps Bonding Process Using Flexible Composite Structure Temporary Substrate for Micro-Led Display Applications

84‐4: Transfer of Flip‐Chip Structure micro‐LED from Sapphire to Thin Film

Advances in Laser-Assisted Mass Transfer of MicroLED

Magnetically Driven Non‐Contact Transfer Printing Based on a Bi‐Stable Elastomeric Stamp

P‐10.1: Transfer Process of Micro‐LED Using Laser

Liquid Droplet Stamp Transfer Printing

A Thermal Actuated Switchable Dry Adhesive with High Reversibility for Transfer Printing

Laser-induced adhesives with excellent adhesion enhancement and reduction capabilities for transfer printing of microchips

High Fidelity Tape Transfer Printing Based on Chemically Induced Adhesive Strength Modulation

P‐9.2: GaN HEMT‐LED Homogeneous Integration for Micro‐LED Mass Transferring

Super retina TFT based full color microLED display via laser mass transfer

A Photochemical Approach toward High‐Fidelity Programmable Transfer Printing

Flexible arrays of GaN-based Micro-LEDs fabricated on different substrates by a laser lift-off process