Abstract:Quasi‐1D BiSeI nanowires with high purity and high quality are synthesized via chemical vapor deposition on mica substrate. The high crystallinity and inherent structural anisotropy of BiSeI nanowire offer its detector board photoresponse with high responsivity, fast response rate, and prominent linear dichroism. This work opens new prospects for building novel multifunctional optoelectronic devices. Bismuth chalcohalides (BiSeI and BiSI), a class of superior light absorbers, have recently garnered great attention owing to their promise in constructing next‐generation optoelectronic devices. However, to date, the photodetection application of bismuth chalcohalides is still limited due to the challenge in controllable preparation. Herein, the synthesis of large‐scale quasi‐1D BiSeI nanowires via chemical vapor deposition growth is reported. By precisely tuning the growth temperature and the Se supply, it can effectively control the growth thermodynamics and kinetics of BiSeI crystal, and thus achieve high purity quasi‐1D BiSeI nanowires with high crystal quality, uniform diameter, and tunable domain length. Theory and optical characterizations of the quasi‐1D BiSeI nanowires reveal an indirect bandgap of 1.57 eV with prominent optical linear dichroism. As a result, the quasi‐1D BiSeI nanowire‐based photodetector demonstrates a broadband photoresponse (400–800 nm) with high responsivity of 5880 mA W−1, fast response speed of 0.11 ms and superior air stability. More importantly, the photodetector displays strong polarization sensitivity (anisotropic ratio = 1.77) under the 532 nm light irradiation. This work will provide important guides to the synthesis of other quais‐1D metal chalcohalides and shed light on their potential in constructing novel multifunctional optoelectronic devices.

Piezoelectric and optoelectronic properties of α-In2Se3 single-crystal nanobelts synthesized by a direct selenization of In2O3

Controlled Synthesis of High-Quality Monolayered Α-In2se3 Via Physical Vapor Deposition.

Phase Identification and Strong Second Harmonic Generation in Pure Ε-Inse and Its Alloys.

Edge-Epitaxial Growth of InSe Nanowires toward High-Performance Photodetectors

Piezo‐Phototronic Effect in 2D α‐In 2 Se 3 /WSe 2 van der Waals Heterostructure for Photodetector with Enhanced Photoresponse

Fabrication of High-Quality In2Se3 Nanowire Arrays Toward High-Performance Visible-Light Photodetectors.

Out-of-plane Piezoelectricity and Ferroelectricity in Layered $α$-In2Se3 Nano-flakes

Out-of-Plane Piezoelectricity and Ferroelectricity in Layered α-In2Se3 Nanoflakes

High-responsivity broad-band sensing and photoconduction mechanism in direct-Gap α-In 2 Se 3 nanosheet photodetectors

Wafer-Scale Synthesis of High-Quality Semiconducting Two-Dimensional Layered InSe with Broadband Photoresponse

Ferroelectric-Tunable Photoresponse in Α- In2Se3 Photovoltaic Photodetectors: an Ab Initio Quantum Transport Study

Synthesis and enhanced piezoelectric response of CVD-grown SnSe layered nanosheets for flexible nanogenerators

Polarization‐Sensitive Photodetector Based on High Crystallinity Quasi‐1D BiSeI Nanowires Synthesized via Chemical Vapor Deposition

Facile fabrication of amorphous-In2Se3/Si heterojunction for fast ultraviolet to near-infrared broadband photodetection

Boosting Photoresponse of Self-Powered InSe-Based Photoelectrochemical Photodetectors via Suppression of Interface Doping

Facile Synthesis of Γ-In2 Se3 Nanoflowers Toward High Performance Self-Powered Broadband Γ-In2 Se3 /si Heterojunction Photodiode.

Strain-Modulated Photoelectric Responses from a Flexible α-In2Se3/3R MoS2 Heterojunction

Fabrication of High‐Responsivity Sb2Se3‐Based Photodetectors through Selenization Process

Direct growth Bi2O2Se nanosheets on SiO2/Si substrate for high-performance and broadband photodetector

IP and OOP ferroelectricity in hexagonal γ-In2Se3 nanoflakes grown by chemical vapor deposition

A Giant Tunable Piezoelectric Performance in Two‐dimensional In2Se3 via Interface Engineering