A High‐Performance Self‐Powered UV‐Visible‐Infrared Broadband Photodetector Based on a Solution‐Processed Bi 2 Se 3 /Se Nanorods Heterojunction
Zichun Fu,Shiyong Gao,Ye Yuan,Huiqing Lu,Duoduo Ling,Shuai Ren,Ping Rong,Shujie Jiao,Jinzhong Wang,Yong Zhang
DOI: https://doi.org/10.1002/admi.202200165
IF: 5.4
2022-04-25
Advanced Materials Interfaces
Abstract:Bi2Se3/Se nanorods heterojunction is successfully synthesized through a green and facile solution route. Moreover, a high performance self‐powered photodetector is fabricated based on the as‐prepared Bi2Se3/Se nanorods heterojunction. It can be realized that Bi2Se3/Se nanorods photodetector features the fast response speed and broadband photoresponse from the ultraviolet to infrared range.Nanostructured semiconductor materials synthesized through solution processes have received a substantial body of attention owing to their cost‐effectiveness, manufacturing ease, and environmental friendliness. Here, a simple solution approach is used to synthesize Bi2Se3/Se nanorods (NRs) heterojunction by covering Se NRs with a uniform Bi2Se3 shell. The morphology, composition, and structure of the samples are characterized and the growth mechanism is also analyzed. Furthermore, the photodetector based on the Bi2Se3/Se NRs is fabricated. The as‐prepared Bi2Se3/Se NRs photodetector exhibits an outstanding broadband photoresponse from UV (365 nm) to IR (850 nm) with good repeatability and self‐powered ability. Upon light illumination, Bi2Se3/Se NRs photodetector shows maximum photocurrent of 190 µA (UV light), 194 µA (blue light), 145 µA (green light), 38 µA (red light), 4 µA (IR light) as well as a rapid response time around 0.1 s approximately. Moreover, a possible detection mechanism of Bi2Se3/Se NRs photodetector is also discussed.
materials science, multidisciplinary,chemistry