Abstract:Light-emitting diodes (LEDs) are used widely, but when operated on low-voltage direct current (DC), they consume unnecessary power because a converter must be used to convert alternating current (AC). DC flow across devices also causes charge accumulation under high current density, leading to lowered LED reliability. By contrast, gallium-nitride-based LEDs can be operated without an AC–DC converter being required, potentially leading to greater energy efficiency and reliability. This study developed a multicolor AC-driven light-emitting device by integrating the WSe2 monolayer and AlGaInP–GaInP multiple quantum well (MQW) structures. The CVD-grown WSe2 monolayer was placed on the top of an AlGaInP-based light-emitting diode (LED) wafer to create a two-dimensional/three-dimensional heterostructure. The interfaces of the hybrid devices are characterized and verified through transmission electron microscopy and energy-dispersive X-ray spectroscopy techniques. More than 20% energy conversion from the AlGaInP MQWs to the WSe2 monolayer was observed to boost the WSe2 monolayer emissions. The voltage dependence of the electroluminescence intensity was characterized. Electroluminescence intensity–voltage characteristic curves indicated that thermionic emission was the mechanism underlying carrier injection across the potential barrier at the Ag–WSe2 monolayer interface under low voltage, whereas Fowler–Nordheim emission was the mechanism at voltages higher than approximately 8.0 V. This multi-color hybrid light-emitting devices both expand the wavelength range of 2-D TMDC-based light emitters and support their implementation in such applications as chip-scale optoelectronic integrated systems, broad-band LEDs, and quantum display systems.

Dominant Mechanism of GaN-Based Single Contact Micro-LED Driven by AC Power

Enhanced Performance of GaN-Based Single Contact Micro-LED Driven by AC Power Utilizing the Tunnel Junction

Alternating current electroluminescence from GaN-based nanorod light-emitting diodes

Novel Pulsating-DC High-Voltage Linear Driving Scheme for GaN LED General Lighting

High-output power GaN-LED based on surface plasmon enhancement

Study of GaN-Based Light-Emitting Diode (LED) With a Hybrid Surface Structure

High-Efficiency, Microscale Gan Light-Emitting Diodes and Their Thermal Properties on Unusual Substrates

Monolithic Integration of GaN-Based Transistors and Micro-LED

Direct-Bandgap Electroluminescence from Germanium with Subband Engineering Utilizing a Metal-Oxide-Semiconductor Structure

AC-Driven Multicolor Electroluminescence from a Hybrid WSe2 Monolayer/AlGaInP Quantum Wells Light-Emitting Device

Unusual Strategies For Using Indium Gallium Nitride Grown On Silicon (111) For Solid-State Lighting

Ultrahigh Color Conversion Efficiency Nano-Light-Emitting Diode With Single Electrical Contact

Device Simulation on GaN‐LED Operating in Noncarrier Injection Mode for Performance Improvement by Enhancing the Tunneling Effect in Multiquantum Wells

A Novel GaN LED Structure With Both P and N Discontinuous Ohmic Contacts and Discontinuous CBL

Research on Auto-split GaN-based Vertical Structure LED

Working Mechanisms of Nanoscale Light-Emitting Diodes Operating in Non-Electrical Contact and Non-Carrier Injection Mode: Modeling and Simulation

Fully GaN Monolithic Integrated Light Emitting Triode‐on‐Bipolar Junction Transistor Device Drivable with Small Current Signals and Its Frequency Response Characteristic: A Modeling and Simulation Study

Growth and Characterization of Micro-LED Based on GaN Substrate

Operation Behavior Under Extremely High Injection Level for GaN-Based Micron LED

Fabrication and Characterization of GaN-Based Micro-LEDs on Silicon Substrate*

Improved Optical and Electrical Characteristics of GaN-Based Micro-LEDs by Optimized Sidewall Passivation