Hypoeutectic Liquid Metal Printing of 2D Indium Gallium Oxide Transistors (Small 45/2024)

Simon A. Agnew,Anand P. Tiwari,Samuel W. Ong,Md Saifur Rahman,William J. Scheideler
DOI: https://doi.org/10.1002/smll.202470334
IF: 13.3
2024-11-09
Small
Abstract:Flexible Electronics In article number 2403801, William J. Scheideler and co‐workers utilize liquid metal surface oxidation to synthesize crystalline two‐dimensional (<3 nm thick) InGaOx (IGO) semiconductors from hypoeutectic In‐Ga alloys at plastic substrate compatible temperatures (180 °C). These ultrathin channel transistors exhibit steep subthreshold slope and high mobility (∼18 cm2 Vs−1) suitable for flexible oxide electronics.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
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