Abstract:Silicon monoxide is a material which is commonly used as a dielectric medium in thin film capacitors and as an insulating layer in various vacuum evaporated devices, e.g., thin film transistors. It has been shown in a previous publication1 that the most important parameter in the preparation of this material is the ratio of the number of silicon monoxide molecules arriving at the substrate in unit time compared with the corresponding number of residual gas molecules. This ratio affects the degree of oxidation of the material during deposition and this in turn affects the physical properties, e.g., mechanical stress, porosity and susceptability to further oxidation. This is shown in Figure 1. The horizontal axis is calibrated in units of the arrival ratio N (i. e., the rate of arrival of SiO gas molecules/O2 in this case). The fraction of incident light transmitted gives a measure of the degree of film oxidation since at the wavelength used (3, 500 Å) the transmission of SiO is very much less than that of SiO2. It can be seen from the vacuum value curve that the film tends to SiO2 as N is decreased (either by decreasing the evaporation rate or by increasing the gas pressure). Typically, for a residual atmosphere of oxygen, N = 1 when the rate of deposition is 10 Å/ sec and the pressure is 8 × 10−6 torr. It can also be seen that exposing the film to the atmosphere causes an increase in the oxidation in every case. This increase is particularly strong for low N films which are very susceptible to the atmosphere, both the oxygen and the water vapor contents of the atmosphere having a strong effect. For this reason it was decided to perform all tests on the films in the original vacuum to ensure that the effects of oxidation were minimized.

Infrared dielectric properties of low-stress silicon oxide

Study of plasma-deposited amorphous SiO2 films using infrared absorption techniques

Properties of plasma-deposited amorphous SiO2 films

Infrared Absorption Properties of Si— O —Si Bonds in Plasma-deposited Amorphous SiOx∶H Films

A Study of PECVD Amorphous SiO2 Films Using Infrared Absorption Techniques

Optical Properties Study of Silicon Oxynitride Films Deposited by RF Magnetron Sputtering

Optical Properties in Mid-Infrared Range of Silicon Oxide Thin Films with Different Stoichiometries

Infrared Spectra of Silicon Nanowires

Electrical and optical characterization of SiONC dielectric thin film deposited by polymer-source chemical vapor deposition

Dielectric properties of films of silicon monoxide

Mechanical stress and thermal-elastic properties of oxide coatings for use in the deep-ultraviolet spectral region

Tunable Electronic and Optical Properties of Monolayer Silicane under Tensile Strain: a Many-Body Study.

Infrared Spectroscopic Characterization of Silicon Nitride Films—Optical Dispersion Induced Frequency Shifts

Evolution of Optical Constants of Silicon Dioxide on Silicon from Ultrathin Films to Thick Films

Ellipsometric Study of the Optical Properties of Silicon-Based Si : Sio2 Composite Thin Films under Different Annealing Temperatures

Optical and Electrical Properties of SiO2 under Uniaxial, Biaxial, and Isotropic Pressure: a First Principles Study

Strain effect in silicon-on-insulator materials: Investigation with optical phonons

Dielectric properties of strained NiO thin films

On the Optical Properties of Thin‐Film Vanadium Dioxide from the Visible to the Far Infrared

Low-Frequency Dielectric Relaxation in Structures Based on Macroporous Silicon with Meso-Macroporous Skin-Layer

Electron Dynamics in Films Made of Transition Metal Nanograins Embedded in SiO2:Infrared Reflectivity and Nanoplasma Infrared Resonance