Abstract:Bilayer‐channel oxide TFTs are fabricated. The top and bottom active layer characteristics are designed by controlling the semiconductor thickness. Top active layer characteristics affect electron transport and stability in bilayer‐channel TFTs. An optimized heterostructure channel leads to effective electron transport and outstanding bias stability. Metal‐oxide thin‐film transistors (TFTs) have garnered much attention because of their advantages such as high transparency, low leakage current, and low processing temperature. However, there is a need to continuously improve their mobility and bias stability for application to next‐generation advanced electronics. In this study, the thickness of bilayer semiconductors is finely controlled to enhance the charge transport characteristics and bias stability in solution‐processed heterojunction oxide TFTs. The thicknesses of the top and bottom layers in the bilayer are individually adjusted by controlling solution molarity. The introduction of a bilayer channel improved the electrical performance of oxide TFTs via effective charge transport. However, trap‐limited conduction becomes dominant in the bilayer with an excessively thick top layer, thereby leading to a significant reduction in mobility and positive bias stability. Meanwhile, although increasing the bottom layer thickness contributes to improved mobility and reliability, it causes a serious negative shift in threshold voltage (VTH). TFTs with an optimized bilayer structure show high mobility at a VTH close to 0 V and have particularly excellent positive bias stress stability. This study on bilayer channel thickness will be beneficial for developing advanced transistors with optimized bilayer or multilayer channels.

Bias-stress-stable Sub-1.5 V Oxide Thin-film Transistors via Synergistic Composition of Sol-gel Quaternary High- k Oxide Dielectrics

Fully solution-induced high performance indium oxide thin film transistors with ZrOx high-k gate dielectrics

Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters

Addressing the Conflict between Mobility and Stability in Oxide Thin‐film Transistors

Enhanced Stability Performance of Transparent Ozone ALD ZnO Thin-Film Transistors with SiAlO X Dielectric

Low Voltage Driven, Stable Solution-Processed Zinc-Tin-Oxide TFT with HfOy and AlOx Stack Gate Dielectric

Viable Approach of Tuning Oxide Semiconductor Thin Films in Solution‐Processed Heterojunction Thin Films Transistors for Both Higher Performances and Stability

Improved Performance and Bias Stability of Al2O3/IZO Thin-Film Transistors with Vertical Diffusion

Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors

High-performance a-ITZO TFTs with high bias stability enabled by self-aligned passivation using a-GaOx

Sub-0.5 V Highly Stable Aqueous Salt Gated Metal Oxide Electronics

Aqueous solution-deposited aluminum-gallium-oxide alloy gate dielectrics for low voltage fully oxide thin film transistors

15.2: Invited Paper: Atomic Layer Deposited Oxide Semiconductor Enabling High Mobility and Low Driving Voltage in TFTs

Negative-U Defect Passivation in Oxide-Semiconductor by Channel Defect Self-Compensation Effect to Achieve Low Bias Stress VTH Instability of Low-Thermal Budget IGZO TFT and FeFETs

59.9 mV·dec Subthreshold Swing Achieved in Zinc Tin Oxide TFTs With In Situ Atomic Layer Deposited AlO Gate Insulator

35‐4: High‐Mobility and High‐Negative Bias Illumination Stress Stability Based on ITZO/IGZO Bilayer Thin Film Transistors

Mobility–stability trade-off in oxide thin-film transistors

Impact of Layer Configuration and Doping on Electron Transport and Bias Stability in Heterojunction and Superlattice Metal Oxide Transistors

Remarkable Bias‐Stress Stability of Ultrathin Atomic‐Layer‐Deposited Indium Oxide Thin‐Film Transistors Enabled by Plasma Fluorination

Hybrid Organic-Metal Oxide Multilayer Channel Transistors with Record Operational Stability

Improved mobility and bias stability of Hf-doped IGZO/IZO/Hf-doped IGZO thin-film transistor