Sub-0.5 V Highly Stable Aqueous Salt Gated Metal Oxide Electronics

Sungjun Park,SeYeong Lee,Chang-Hyun Kim,Ilseop Lee,Won-June Lee,Sohee Kim,Byung-Geun Lee,Jae-Hyung Jang,Myung-Han Yoon
DOI: https://doi.org/10.1038/srep13088
IF: 4.6
2015-08-14
Scientific Reports
Abstract:AbstractRecently, growing interest in implantable bionics and biochemical sensors spurred the research for developing non-conventional electronics with excellent device characteristics at low operation voltages and prolonged device stability under physiological conditions. Herein, we report high-performance aqueous electrolyte-gated thin-film transistors using a sol-gel amorphous metal oxide semiconductor and aqueous electrolyte dielectrics based on small ionic salts. The proper selection of channel material (i.e., indium-gallium-zinc-oxide) and precautious passivation of non-channel areas enabled the development of simple but highly stable metal oxide transistors manifested by low operation voltages within 0.5 V, high transconductance of ~1.0 mS, large current on-off ratios over 107 and fast inverter responses up to several hundred hertz without device degradation even in physiologically-relevant ionic solutions. In conjunction with excellent transistor characteristics, investigation of the electrochemical nature of the metal oxide-electrolyte interface may contribute to the development of a viable bio-electronic platform directly interfacing with biological entities in vivo.
multidisciplinary sciences
What problem does this paper attempt to address?