Abstract:Effect of Ge-doping at the non-magnetic site (Si-site) of the Mn-based binary alloy Mn 5 Si 3 has been explored through temperature-dependent x-ray diffraction, dc-magnetic, and electrical transport measurements. All the doped alloys show D 8 8 type hexagonal structure with space group P 6 3 / m c m at room temperature and undergoes two structural distortions, hexagonal ( P 6 3 / m c m ) → orthorhombic ( C c m m ) → orthorhombic ( C c 2 m ), on cooling. The magnetic characters of these orthorhombic ( C c 2 m ), orthorhombic ( C c m m ), and hexagonal ( P 6 3 / m c m ) phases are non-collinear antiferromagnetic (AFM1), collinear antiferromagnetic (AFM2), and paramagnetic (PM), respectively. Doping of Ge results in a significant increase in the AFM1 to AFM2 transition temperature ( T N 1 ). However, the AFM2 to PM transition point remains unchanged. In addition, a reasonable increase in the critical field values of the AFM1 to AFM2 transition via another non-collinear antiferromagnetic phase (AFM1 ′ ) with increasing Ge concentration has been observed, indicating the strengthening of AFM1 and AFM1 ′ phases over the AFM2 phase. Such behaviors make the observation of unusual magnetic properties of undoped Mn 5 Si 3 alloys, like inverted hysteresis loop (IHL) and thermomagnetic irreversibility (TI), more evident for these Ge-doped alloys. Further, this study unfolds the presence of conventional and inverse magnetocaloric effect and they found to decrease with Ge doping. An interesting interplay for positive and negative magnetoresistance has also been observed in all the studied alloys.

Properties of Germanium Doped with Manganese

Magnetism Inmnxge1−xsemiconductors Mediated by Impurity Band Carriers

Electrical Properties of Germanium Semiconductors at Low Temperatures

Dopant Segregation and Giant Magnetoresistance in Manganese-Doped Germanium

Anomalous Hall resistance in Ge:Mn systems with low Mn concentrations

Metal-Insulator Transition in Homogeneously Doped Germanium

Band gap narrowing and doping level of heavily doped Germanium nanocrystals deduced from photoconductivity studies

Effects of Germanium on Movement of Dislocations in P-Type Czochralski Silicon

Transport in the metallic regime of Mn doped III-V Semiconductors

Transport Properties of Fe-Si-Mn Based Thermoelectric Alloys Doped with Carbon, Germanium

Influence of Mn concentration on the electronic and magnetic properties of Mn doped β-Ge3N4: A first-principles study

Half-metallic ferromagnetism in transition-metal doped germanium nitride: A first-principles study

Thermoelectric Propertie of Ge Based Electron Crystal Phonon Glass Materials

Novel Germanium-Based Magnetic Semiconductors

Structural, magnetic, and transport properties of polycrystalline Mn3Ga0.8Ge0.2 alloy

Magnetic and Electrical/thermal Transport Properties of Mn-doped M N+1axn Phase Compounds Cr2−xMnxGaC (0 ≤ X ≤ 1)

Influence of Ge-doping on the collinear and non-collinear antiferromagnetic phases of Mn 5 Si 3 alloy

Heavily $n$-doped Ge: low-temperature magnetoresistance properties

Weyl points and anomalous transport effects tuned by the Fe doping in Mn3Ge Weyl semimetal

Structural Growth Sequences and Electronic Properties of Manganese-Doped Germanium Clusters: MnGen(2–15)

Electronic and Magnetic Properties of Manganese and Iron-Doped Ganasn Nanocages (N=7-12)