Abstract:After more than a decade of intensive research in the field of diluted magnetic semiconductors (DMS), the nature and origin of ferromagnetism, especially in III-V compounds is still controversial. Many questions and open issues are under intensive debates. Why after so many years of investigations Mn doped GaAs remains the candidate with the highest Curie temperature among the broad family of III-V materials doped with transition metal (TM) impurities ? How can one understand that these temperatures are almost two orders of magnitude larger than that of hole doped (Zn,Mn)Te or (Cd,Mn)Se? Is there any intrinsic limitation or is there any hope to reach in the dilute regime room temperature ferromagnetism? How can one explain the proximity of (Ga,Mn)As to the metal-insulator transition and the change from Ruderman-Kittel-Kasuya-Yosida (RKKY) couplings in II-VI compounds to double exchange type in (Ga,Mn)N? In spite of the great success of density functional theory based studies to provide accurately the critical temperatures in various compounds, till very lately a theory that provides a coherent picture and understanding of the underlying physics was still missing. Recently, within a minimal model it has been possible to show that among the physical parameters, the key one is the position of the TM acceptor level. By tuning the value of that parameter, one is able to explain quantitatively both magnetic and transport properties in a broad family of DMS. We will see that this minimal model explains in particular the RKKY nature of the exchange in (Zn,Mn)Te/(Cd,Mn)Te and the double exchange type in (Ga,Mn)N and simultaneously the reason why (Ga,Mn)As exhibits the highest critical temperature among both II-VI and III-V DMS.

Transport in the metallic regime of Mn doped III-V Semiconductors

Magnetotransport in the insulating regime of Mn doped GaAs

DC-transport Properties of Ferromagnetic (ga,mn)as Semiconductors

Diluted Magnetic Semiconductors in the Low Carrier Density Regime

Boundary of Quantum Evolution under Decoherence

Extrinsic Anomalous Hall effect in Mn Doped GeSnTe Semiconductors in the Bad Metal Hopping Regime

Mechanism of carrier-induced ferromagnetism in magnetic semiconductors

Mn Doping Effects on the Gate-Tunable Transport Properties of Cd 3 As 2 Films Epitaxied on GaAs

Disorder and Frustration in Diluted Magnetic Semiconductors at Low Carrier Densities

Charge inhomogeneities and transport in semiconductor heterostructures with a manganese $δ$-layer

Magneto-electronic transport theory in ferromagnets above the Curie temperature and in semiconductors

Temperature Dependent Transport Properties Of P-Pb1-Xmnxse Films

Carrier States and Ferromagnetism in Diluted Magnetic Semiconductors

Magnetic and Electrical/thermal Transport Properties of Mn-doped M N+1axn Phase Compounds Cr2−xMnxGaC (0 ≤ X ≤ 1)

Temperature-dependent magnetization in diluted magnetic semiconductors

Intrinsic and Extrinsic Anomalous Transport Properties in Noncollinear Antiferromagnetic Mn_3Sn from First-Principle Calculations

Magnetism Inmnxge1−xsemiconductors Mediated by Impurity Band Carriers

Intrinsic and extrinsic anomalous transport properties in noncollinear antiferromagnetic Mn$_3$Sn from first-principle calculations

Calculating the Curie Temperature reliably in diluted III-V ferromagnetic semiconductors

A theory of ferromagnetism in planar heterostructures of (Mn,III)-V semiconductors

Unraveling the nature of carrier mediated ferromagnetism in diluted magnetic semiconductors