Temperature Dependent Transport Properties Of P-Pb1-Xmnxse Films

Yinghui Sun,Tie Lin,KuangHong Gao,Zhigao Hu,Huizhen Wu,Pingxiong Yang,Ning Dai,Junhao Chu
DOI: https://doi.org/10.1063/1.3478708
IF: 2.877
2010-01-01
Journal of Applied Physics
Abstract:Hall measurements are performed to survey electrical properties of p-Pb1-xMnxSe (x approximate to 0.04) films grown by molecular beam epitaxy technique. It is indicated that these films are approaching the metal-insulator transition from the metallic side. Weak localization effect was observed up to about 50 K. The deduced phase-breaking time tau(phi) on temperature is interpreted according to the concept of the electron-electron scattering in highly disordered bulk conductors. (C) 2010 American Institute of Physics. [doi:10.1063/1.3478708]
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