Doping Dependence of Normal-State Transport Properties in La- and Pb-doped Bi2Sr2CuOy.

NL WANG,Y CHONG,CY WANG,DJ HUANG,ZQ MAO,LZ CAO,ZJ CHEN
DOI: https://doi.org/10.1103/physrevb.47.3347
1993-01-01
Abstract:We report measurements of the electrical resistivity, thermoelectric power, and Hall coefficient on La- and Pb-doped Bi2Sr2CuOy compounds as a function of temperature. Both insulating and overdoped nonsuperconducting-metal samples have been obtained. Analysis of the electrical resistivity in the insulating region suggests that the conduction is governed by a variable-range-hopping mechanism in the low-temperature region. As the system changes from a superconductor to an overdoped nonsuperconducting-metal, the resistivity undergoes a change from a linear temperature dependence to a power-law temperature dependence with exponent n is similar to 1.5. This n is similar to 1.5 behavior occurs over a wide temperature range. Remarkable changes associated with the insulator-superconductor-nonsuperconducting-metal transition are also observed both in the thermoelectric power and the Hall coefficient. A significant difference is that the thermoelectric power becomes negative at the higher doping level, while the Hall coefficient remains positive. We explain the experimental results from a two-carrier model by assuming that the Cu 3d(x2-y2) electrons undergo a change from a localized state to a partially delocalized state with an increase in the number of dopant O 2p holes.
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