Magneto-electronic transport theory in ferromagnets above the Curie temperature and in semiconductors

Andrew Das Arulsamy

DOI: https://doi.org/10.48550/arXiv.cond-mat/0212202

2004-08-15

Abstract:Quantitative differences of Lagrange multipliers between standard Fermi-Dirac statistics (FDS) and Ionization energy ($E_I$) based FDS (iFDS) are analyzed in detail to obtain reasonably accurate interpretations without violating the standard FDS. The resistivity and Hall-resistance models in 1D, 2D and 3D are also derived to illustrate the transport phenomena in semiconducting manganites. It is shown via calculation that the charge carriers in these materials seem to be strongly correlated in term of electron-ion attraction or simply, fermions in those materials are somewhat gapped due to Coulomb attraction. This Coulomb attraction naturally captures the polaronic effect in manganites. $E_I$ is found to be the only essential parameter that predicts $\rho(T,doping,pressure,magnetic field)$ quite accurately. However, this model as will be pointed out, is not suitable for metals with free-electrons and strong electron-phonon scattering. It is to be noted that iFDS and $\rho(T,doping,pressure,magnetic field)$ model are only valid in the paramagnetic region of ferromagnetic manganites and other doped-semiconductors. Recent X-ray photoemission spectroscopy (XPS) studies have indicated that there exists a critical crossover from Mn(2+) to Mn(3+) depending upon Mn's concentrations in (Ga(1-x)Mnx)As diluted magnetic semiconductors (DMS). Such phenomenon occuring at certain critical concentration directly point towards the applicability of $E_I$ based Fermi-liquid (iFLT). As such, iFDS is also discussed with respect to DMS above Curie temperature.

Statistical Mechanics,Strongly Correlated Electrons

What problem does this paper attempt to address?

The problems that this paper attempts to solve mainly focus on understanding the electrical transport properties of ferromagnetic materials (especially manganese oxides) and dilute magnetic semiconductors (DMS) above the Curie temperature (\(T_C\)). Specifically, the author attempts to improve the understanding of the carrier transport mechanism in these materials and explain the changes in their resistivity (\(\rho(T, \text{doping}, \text{pressure}, \text{magnetic field})\)) by introducing Fermi - Dirac statistics based on ionization energy (iFDS).

### Main problem decomposition

1. **Improvement of resistivity model**:
- The traditional Fermi - Dirac statistics (FDS) cannot accurately predict the resistivity changes of ferromagnetic and semiconductor materials at high temperatures.
- Introduce Fermi - Dirac statistics based on ionization energy (iFDS) to more accurately describe the behavior of carriers, especially when considering electron - ion interactions.

2. **Explanation of strong correlation effects**:
- The paper explores strong correlation effects in materials, such as the polaronic effect, and explains through iFDS how these effects affect resistivity and Hall resistance.
- In particular, the ionization energy (\(E_I\)) is found to be a key parameter for predicting resistivity, which can capture the carrier gap due to Coulomb attraction.

3. **Phase transitions in dilute magnetic semiconductors**:
- The critical transition from Mn\(^{3+}\) to Mn\(^{2+}\) in dilute magnetic semiconductors (such as Mn - doped GaAs) is studied, and this transition is related to the doping concentration.
- A Fermi - liquid theory based on ionization energy (iFLT) is proposed to explain this phase transition and its impact on electrical transport properties.

4. **Transport models in different dimensions**:
- Resistivity and Hall resistance models in one - dimensional (1D), two - dimensional (2D), and three - dimensional (3D) cases are derived to fully understand the electrical transport behavior of materials in different dimensions.
- These models are particularly suitable for studying the electrical properties of manganese oxides and dilute magnetic semiconductors at high temperatures.

### Formula summary

- **Fermi - Dirac distribution function based on ionization energy**:
\[
n_i=\frac{q_i}{\exp[\mu+\lambda(E_{\text{initial state}}\pm E_I)_i]+1}
\]
where \(E_{\text{initial state}}+E_I = E_{\text{electrons}}\) and \(E_{\text{initial state}}-E_I = E_{\text{holes}}\).

- **Resistivity model**:
\[
\rho(1D)=A_1\hbar\left(\frac{m_e^*m_h^*}{m_e^*+m_h^*}\right)^{1/4}\frac{T^{3/2}}{e^2(2\pi/k_B)^{1/2}}\exp\left(\frac{E_I}{k_BT}\right)
\]
\[
\rho(2D)=A_2\pi\hbar^2\frac{\exp\left(\frac{E_I}{k_BT}\right)}{e^2k_BT}
\]
\[
\rho(3D)=A_3\frac{(2\pi\hbar^2/k_B)^{3/2}}{2e^2}\left(\frac{m_e^*m_h^*}{m_e^*+m_h^*}\right)^{-1/4}T^{1/2}\exp\left(\frac{E_I}{k_BT}\right)
\]

- **Hall resistance**:
\[
R_H^{(2D)}=-\frac{A_2\pi\hbar^2}{A(H)_2em_e^*k_BT}\exp\left(\frac{E_I}{k_BT}\right)