Abstract:Diluted magnetic semiconductors are a recent research area due to their ability to enhance ferromagnetic properties and facilitate the electrical detection of magnetoresistance and polarization. (In, Mn)As dilute magnetic semiconductor has potential application in the field of spintronic devices, such as spin field-effective transistors, spin laser light-emitted diodes, modern technology, multi-functional devices, green technology, and nanotechnology. For this study, we have considered the RKKY interaction between Mn 2+ spins via delocalized carriers. The effect of manganese ion concentration and applied magnetic field on ferromagnetic diluted magnetic semiconductor properties such as dispersion relation, Curie temperature, and reduced magnetization of (In, Mn)As are studied. We have developed a spin-wave model using the Holstein-Primakaff transformation. Based on the developed model, the number of ferromagnetic magnons, dispersion relations, and Curie temperatures were calculated with or without an applied magnetic field. The reduced magnetization is also calculated. The graph of Curie temperature and magnetization of (In,Mn)As versus temperature with applied field up to 6 T and manganese ion concentration from 0.01 to 0.1 are plotted. The graph of spin wave dispersion of (In,Mn)As versus a wave vector with varying manganese ion concentration with and without an applied magnetic field up to 6 T. In this study, an InMnAs Curie temperature of 290.68 K is found without an applied magnetic field with a 0.1 manganese ion concentration, which is near room temperature. Moreover, with an applied magnetic field of 6 T at 0.1 manganese ion concentration, a Curie temperature of 342.466 K is found, which is above room temperature. Hence, these temperatures are suitable for the field of next-generation spintronic new technology.

Transition temperature of ferromagnetic semiconductors: a dynamical mean field study

Disorder and Frustration in Diluted Magnetic Semiconductors at Low Carrier Densities

Temperature-dependent magnetization in diluted magnetic semiconductors

Diluted Magnetic Semiconductors in the Low Carrier Density Regime

Numerical Simulations Of Random Spin (And Fermionic) Models With A Wide Distribution Of Energy Scales

Curie Temperature Trends in (III,Mn)V Ferromagnetic Semiconductors

Unraveling the nature of carrier mediated ferromagnetism in diluted magnetic semiconductors

Transport properties of diluted magnetic semiconductors: Dynamical mean field theory and Boltzmann theory

How to make semiconductors ferromagnetic: A first course on spintronics

DC-transport Properties of Ferromagnetic (ga,mn)as Semiconductors

Boosting the Curie temperature with correlations in diluted magnetic semiconductors

Towards a Fully Ab-Initio Description of the Diluted Magnetic Semiconductor $Ga_{1-x}Mn_{x}As$. Ferromagnetism, Electronic Structure, and Optical Response

Impact of Next-Nearest-Neighbor hopping on Ferromagnetism in Diluted Magnetic Semiconductors

Microscopic mechanism of high-temperature ferromagnetism in Fe, Mn, and Cr-doped InSb, InAs, and GaSb magnetic semiconductors

A theory of ferromagnetism in planar heterostructures of (Mn,III)-V semiconductors

Magnetism of Semiconductor-Based Magnetic Tunnel Junctions under Electric Field from First Principles

Ferromagnetism in diluted magnetic semiconductor heterojunction systems

Precise tuning of the Curie temperature of (Ga,Mn)As-based magnetic semiconductors by hole compensation: Support for valence-band ferromagnetism

Magneto-electronic transport theory in ferromagnets above the Curie temperature and in semiconductors

Theoretical study on the effects of Mn ion doping and applied magnetic field in (In,Mn)As

Mechanism of carrier-induced ferromagnetism in magnetic semiconductors