Abstract:Intrinsic magnetic semiconductors hold great interest in the fields of fundamental magnetization and spintronics. One such semiconductor is Cr2Si2Ti6 (CST), a quasi two-dimensional (2D) magnetic semiconductor with potential applications in future magnetic devices. Whereas, the origin of ferromagnetism in CST remains a mystery. To investigate this, ac/dc susceptibility and electronic spin resonance (ESR) measurements were conducted. Based on ac susceptibility scaling, the critical temperature (TC) for the ferromagnetic (FM) to paramagnetic (PM) phase transition was found to be ~ 32.5 K, with critical exponent δ = 6.7 from the critical isotherm, β + γ = 1.72 from the temperature dependence of the crossover line, and γ = 1.43 from the temperature dependence of the susceptibility along the same line. All critical exponents were found to be consistent with the dc magnetization scaling method. However, above and below TC, the origin of magnetism cannot be explained by a single theory. To explore the origin of abnormal magnetic critical behavior, ESR measurements were performed. Below T* ~ 130 K, the ESR measurements revealed that the resonance field width (ΔH) tends to increase and decrease for the applied magnetic field H parallel and perpendicular to the c axis, respectively, indicating the onset of magnetic interaction even in the PM state. Meanwhile, the deviation from Curie-Weiss behavior below T* also confirmed the occurrence of magnetic correlation above the TC in CST. These observations suggest that the competition and cooperation among the direct and indirect interactions, the structural distortion and the van der Walls interaction at high temperature should be considered to investigate the origin of anomalous magnetism in CST. The present results provide valuable insights into the nature of ferromagnetism in 2D magnetic semiconductor.

Microscopic mechanism of high-temperature ferromagnetism in Fe, Mn, and Cr-doped InSb, InAs, and GaSb magnetic semiconductors

Two-dimensional room temperature ferromagnetic semiconductors

Two-dimensional monolayer CrGaS3: A ferromagnetic semiconductor with high Curie temperature and tunable magnetic anisotropy

High temperature ferrimagnetic semiconductors by spin-dependent doping in high temperature antiferromagnets

Observation of the possible magnetic corretion above the Curie temperature in Cr2Si2Te6 single crystal

Ultra-High-Temperature Ferromagnetism in Intrinsic Tetrahedral Semiconductors.

Raising TC of Ferromagnetic Semiconductors Through Doping Control: the Case of GaMnAs

Precise tuning of the Curie temperature of (Ga,Mn)As-based magnetic semiconductors by hole compensation: Support for valence-band ferromagnetism

High Curie temperature and high hole mobility in diluted magnetic semiconductors (B, Mn)X (X = N, P, As, Sb)

Why is the Tc So High in Fe-Based Pnictide and Chalcogenide Superconductors?

Electron Doping As a Handle to Increase the Curie Temperature in Ferrimagnetic Mn3Si2X6 (X = Se, Te).

Cr Doping-Induced Ferromagnetism in SnTe Thin Films

Electron doping as a handle to increase the Curie temperature in ferrimagnetic Mn 3 Si 2 X 6 (X = Se, Te)

Unraveling the nature of carrier mediated ferromagnetism in diluted magnetic semiconductors

Boosting the Curie temperature with correlations in diluted magnetic semiconductors

Micromagnetism And Variable-Range Hopping Conductivity In Fe1-Xinxcr2s4

Highly‐Tunable Intrinsic Room‐Temperature Ferromagnetism in 2D van der Waals Semiconductor Cr x Ga 1− x Te

Ferromagnetism in Mn and Cr Doped Gan by Thermal Diffusion

Out‐of‐Plane Superexchange Interaction Enhanced Ferromagnetism in Semiconducting Monolayer Cr2Se3

Atomic-Scale Magnetism of Cr-Doped Bi2Se3 Thin Film Topological Insulators.