Abstract:The body of research on (III,Mn)V diluted magnetic semiconductors (DMSs) initiated during the 1990s has concentrated on three major fronts: (i) the microscopic origins and fundamental physics of the ferromagnetism that occurs in these systems, (ii) the materials science of growth and defects, and (iii) the development of spintronic devices with new functionalities. This article reviews the current status of the field, concentrating on the first two, more mature research directions. From the fundamental point of view, (Ga,Mn)As and several other (III,Mn)V DMSs are now regarded as textbook examples of a rare class of robust ferromagnets with dilute magnetic moments coupled by delocalized charge carriers. Both local moments and itinerant holes are provided by Mn, which makes the systems particularly favorable for realizing this unusual ordered state. Advances in growth and postgrowth-treatment techniques have played a central role in the field, often pushing the limits of dilute Mn-moment densities and the uniformity and purity of materials far beyond those allowed by equilibrium thermodynamics. In (III,Mn)V compounds, material quality and magnetic properties are intimately connected. This review focuses on the theoretical understanding of the origins of ferromagnetism and basic structural, magnetic, magnetotransport, and magneto-optical characteristics of simple (III,Mn)V epilayers, with the main emphasis on (Ga,Mn)As. Conclusions are arrived at based on an extensive literature covering results of complementary ab initio and effective Hamiltonian computational techniques, and on comparisons between theory and experiment. The applicability of ferromagnetic semiconductors in microelectronic technologies requires increasing Curie temperatures from the current record of 173K in (Ga,Mn)As epilayers to above room temperature. The issue of whether or not this is a realistic expectation for (III,Mn)V DMSs is a central question in the field and motivates many of the analyses presented in this review.

Ferromagnetism in diluted magnetic semiconductor heterojunction systems

Exchange anisotropy effects on ferromagnetism in diluted, magnetic semiconductors

Diluted Magnetic Semiconductors in the Low Carrier Density Regime

Amplification of the induced ferromagnetism in diluted magnetic semiconductor

Experimental And Theoretical Investigations On Ferromagnetic Nature Of Mn-Doped Dilute Magnetic Semiconductors

Ferromagnetism In Semiconductors Doped With Non-Magnetic Elements

Semiconducting Antiferromagnetism in Mgh2 Doped with 3d Transition Metals: A First-Principles View

Magnetism of Semiconductor-Based Magnetic Tunnel Junctions under Electric Field from First Principles

Theory of ferromagnetic (III,Mn)V semiconductors

Electron and Hole States in Diluted Magnetic Semiconductor Quantum Dots

Disorder and Frustration in Diluted Magnetic Semiconductors at Low Carrier Densities

Recent advances in application-oriented new generation diluted magnetic semiconductors

Transport properties of diluted magnetic semiconductors: Dynamical mean field theory and Boltzmann theory

Electronic and magnetic properties of Mn∕Ge digital ferromagnetic heterostructures: An <i>ab initio</i> investigation

Unraveling the nature of carrier mediated ferromagnetism in diluted magnetic semiconductors

A theory of ferromagnetism in planar heterostructures of (Mn,III)-V semiconductors

How to make semiconductors ferromagnetic: A first course on spintronics

Ferromagnetism in dilute magnetic semiconductors through defect engineering: Li-doped ZnO.

First-principles study of a Mn-doped In<sub>2</sub>Se<sub>3</sub> monolayer: Coexistence of ferromagnetism and ferroelectricity with robust half-metallicity and enhanced polarization

Ferromagnetism Induced by Magnetic Dilution in Van Der Waals Material Metal Thiophosphates

A new diluted magnetic semiconductor based on the expanded phase of ZnS: surmounting the random distribution of magnetic impurities.