Abstract:After more than a decade of intensive research in the field of diluted magnetic semiconductors (DMS), the nature and origin of ferromagnetism, especially in III-V compounds is still controversial. Many questions and open issues are under intensive debates. Why after so many years of investigations Mn doped GaAs remains the candidate with the highest Curie temperature among the broad family of III-V materials doped with transition metal (TM) impurities ? How can one understand that these temperatures are almost two orders of magnitude larger than that of hole doped (Zn,Mn)Te or (Cd,Mn)Se? Is there any intrinsic limitation or is there any hope to reach in the dilute regime room temperature ferromagnetism? How can one explain the proximity of (Ga,Mn)As to the metal-insulator transition and the change from Ruderman-Kittel-Kasuya-Yosida (RKKY) couplings in II-VI compounds to double exchange type in (Ga,Mn)N? In spite of the great success of density functional theory based studies to provide accurately the critical temperatures in various compounds, till very lately a theory that provides a coherent picture and understanding of the underlying physics was still missing. Recently, within a minimal model it has been possible to show that among the physical parameters, the key one is the position of the TM acceptor level. By tuning the value of that parameter, one is able to explain quantitatively both magnetic and transport properties in a broad family of DMS. We will see that this minimal model explains in particular the RKKY nature of the exchange in (Zn,Mn)Te/(Cd,Mn)Te and the double exchange type in (Ga,Mn)N and simultaneously the reason why (Ga,Mn)As exhibits the highest critical temperature among both II-VI and III-V DMS.

Mechanism of carrier-induced ferromagnetism in magnetic semiconductors

Carrier States and Ferromagnetism in Diluted Magnetic Semiconductors

Disorder and Frustration in Diluted Magnetic Semiconductors at Low Carrier Densities

Carrier-Induced Magnetic Ordering Control in a Digital (ga,mn)as Structure

Transport in the metallic regime of Mn doped III-V Semiconductors

A new mechanism of exchange interaction in ferromagnetic semiconductors

Towards a Fully Ab-Initio Description of the Diluted Magnetic Semiconductor $Ga_{1-x}Mn_{x}As$. Ferromagnetism, Electronic Structure, and Optical Response

Electronic and optical properties of ferromagnetic GaMnAs in a multi-band tight-binding approach

Boundary of Quantum Evolution under Decoherence

DC-transport Properties of Ferromagnetic (ga,mn)as Semiconductors

On the nature of the spin-polarized hole states in a quasi-two-dimensional GaMnAs ferromagnetic layer

P-Type Codoping Effect in (ga,mn)as: Mn Lattice Location Versus Magnetic Properties

Carrier-induced ferromagnetism in 2D magnetically-doped semiconductor structures

Atom-by-Atom Substitution of Mn in GaAs and Visualization of their Hole-Mediated Interactions

Vanishing of the anomalous Hall effect and enhanced carrier mobility in the spin-gapless ferromagnetic Mn2CoGa1-xAlx alloys

Unraveling the nature of carrier mediated ferromagnetism in diluted magnetic semiconductors

Magnetotransport in the insulating regime of Mn doped GaAs

Diluted Magnetic Semiconductors in the Low Carrier Density Regime

Magnetotransport properties of (Ga,Mn)As investigated at low temperature and high magnetic field

Magnetism Inmnxge1−xsemiconductors Mediated by Impurity Band Carriers

Origin of the anomalous magnetic circular dichroism spectral shape in ferromagnetic (Ga,Mn)As: Impurity bands inside the band gap