A new mechanism of exchange interaction in ferromagnetic semiconductors

V. K. Dugaev,V. I. Litvinov,J. Barnas,M. Vieira

DOI: https://doi.org/10.48550/arXiv.cond-mat/0203119

2002-03-06

Abstract:We propose a new mechanism of indirect exchange interaction, which can be responsible for the ferromagnetic ordering in Mn-doped semiconductors (like GaMnAs) at low carrier concentration. The mechanism is based on the interplay of the hybridization of band states (conduction or valence) with localized impurity (donor or acceptor) states and the direct exchange interaction between localized spins and the band states. The indirect exchange coupling between two impurities occurs when the wavefunctions of the corresponding localized donor (acceptor) states overlap. This coupling is independent of the free carrier concentration and therefore may be responsible for ferromagnetic transition at low or vanishing carrier concentration.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: **What is the exchange interaction mechanism between magnetic impurities (such as Mn ions in Mn - doped semiconductors) at low carrier concentrations?**

Specifically, the traditional RKKY indirect exchange interaction mechanism cannot explain the ferromagnetic phenomena observed at low or zero free - carrier concentrations. Therefore, the author proposes a new indirect exchange interaction mechanism to explain this phenomenon.

### Background and Problem Description

1. **Background**:
- Diluted magnetic semiconductors (DMS), such as GaMnAs, exhibit ferromagnetism at low temperatures.
- The traditional RKKY mechanism mediates the indirect exchange interaction between magnetic impurities through charged carriers (such as holes), but this mechanism fails at low or zero free - carrier concentrations.

2. **Problem**:
- How to explain that there is still ferromagnetic coupling between magnetic impurities at low or zero free - carrier concentrations?
- Are there other mechanisms that can dominate magnetic coupling under these conditions?

### Core Content of the New Mechanism

The new mechanism proposed by the author is based on the following two key points:

1. **Direct Exchange Interaction**: The direct exchange coupling between the band states (conduction band or valence band) and the local spins (such as the d - shell spins of Mn ions).
2. **Hybridization**: The hybridization between the local donor or acceptor states and the band states.

These two interactions work together to transfer information from one local spin to another, thereby achieving indirect exchange coupling. This coupling occurs when the wave functions of the local states at different positions overlap.

### Mathematical Model

The author proposes an effective Hamiltonian to describe this mechanism:

\[
H_{\text{eff}}=\sum_{k} \psi_{k}^{\dagger} \varepsilon_{k} \psi_{k}+\sum_{i} \psi_{i}^{\dagger} \varepsilon_{i} \psi_{i}+\frac{1}{\sqrt{N}} \sum_{k, i} g_{k}\left(\psi_{k}^{\dagger} \mu \sigma_{\mu \nu} \cdot S_{i} \psi_{i \nu}+\text{H.c.}\right)
\]

where:
- \( \psi_{k} \) and \( \psi_{i} \) are the spinor operators of the band electrons and the local impurity states, respectively.
- \( \varepsilon_{k} \) and \( \varepsilon_{i} \) are the energy spectra of the band electrons and the local impurity states, respectively.
- \( g_{k} \) is a parameter that describes the effective hybridization of the band states and the impurity states depending on the local spins.

In addition, the transitions (hopping terms) between the local states are also considered:

\[
H_{\text{hop}}=\sum_{i j}\left(t_{i j} \psi_{i}^{\dagger} \psi_{j}+\text{H.c.}\right)
\]

where \( t_{i j} \) is the hopping integral between the local states \( \psi_{i} \) and \( \psi_{j} \).

### Conclusion

The newly proposed mechanism can explain the existence of ferromagnetic coupling at low or zero free - carrier concentrations. This mechanism does not depend on the free - carrier concentration, so it may also play an important role in non - degenerate semiconductors. This provides a new perspective for understanding ferromagnetism in diluted magnetic semiconductors and may have an important impact on future material design and applications.