Abstract:The sharpness of the interface between two semiconductors InAs and GaSb is crucial for the observation of a quantized Hall effect. Intermixing between the two materials at such an interface leads to a trapped two‐dimensional hole gas which suppresses Hall quantization and contributes an additional electrical conduction channel. The interface of common III‐V semiconductors InAs and GaSb can be utilized to realize a two‐dimensional (2D) topological insulator state. The 2D electronic gas at this interface can yield Hall quantization from coexisting electrons and holes. This anomaly is a determining factor in the fundamental origin of the topological state in InAs/GaSb. Here, the coexistence of electrons and holes in InAs/GaSb is tied to the chemical sharpness of the interface. Magnetotransport, in samples of Mn‐doped InAs/GaSb cleaved from wafers grown at a spatially inhomogeneous substrate temperature, is studied. It is reported that the observation of quantum oscillations and a quantized Hall effect whose behavior, exhibiting coexisting electrons and holes, is tuned by this spatial nonuniformity. Through transmission electron microscopy measurements, it is additionally found that samples that host this co‐existence exhibit a chemical intermixing between group III and group V atoms that extends over a larger thickness about the interface. The issue of intermixing at the interface is systematically overlooked in electronic transport studies of topological InAs/GaSb. These findings address this gap in knowledge and shed important light on the origin of the anomalous behavior of quantum oscillations seen in this 2D topological insulator.

On the nature of the spin-polarized hole states in a quasi-two-dimensional GaMnAs ferromagnetic layer

Ab Initio Study on the Electronic Structure and Magnetism of MnAs, MnSb, and MnBi

Anomalous spin polarization of GaAs two-dimensional hole systems

Spin-Polarized Tunneling as a probe of (Ga,Mn)As electronic properties

Mechanism of carrier-induced ferromagnetism in magnetic semiconductors

Variation of magnetism by defects and impurities in two-dimensional magnetic materials based on spin spiral method: A case of -(Ga, Mn)As

Atom-by-Atom Substitution of Mn in GaAs and Visualization of their Hole-Mediated Interactions

Towards a Fully Ab-Initio Description of the Diluted Magnetic Semiconductor $Ga_{1-x}Mn_{x}As$. Ferromagnetism, Electronic Structure, and Optical Response

Pecularities of Hall effect in GaAs/δ<Mn>/GaAs/In\timesGa1-\timesAs/GaAs (\times {\approx} 0.2) heterostructures with high Mn content

Composite Fermion States Around the Two-Dimensional Hole Landau Level Filling Factor 32 in Tilted Magnetic Fields

Mn Distribution and Spin Polarization Inga1−xmnxas

Cubic anisotropy in high homogeneity thin (Ga,Mn)As layers

Non-monotonic magnetic field and density dependence of in-plane magnetoresistance in dilute two-dimensional holes in GaAs/AlGaAs

Hole Mediated Magnetism In Mn-Doped Gan Nanowires

Non-Fermi-liquid behavior for holes in doped two-dimensional antiferromagnets

Interface Dependent Coexistence of Two‐Dimensional Electron and Hole Gases in Mn‐doped InAs/GaSb

Study on Raman Spectra of GaMnAs

Majority-spin non-quasiparticle states in half-metallic ferrimagnet Mn$_2$VAl

Electronic and optical properties of ferromagnetic GaMnAs in a multi-band tight-binding approach

Charge transfer spin-polarons and ferromagnetism in weakly doped AB-stacked TMD heterobilayers

A theory of ferromagnetism in planar heterostructures of (Mn,III)-V semiconductors