Abstract:One of the most attractive types of novel nonvolatile memory concepts is resistive random access memory (ReRAM) based on a reversible ("soft") dielectric breakdown effect. The interest is caused by combining simple architecture with promising performance: excellent scalability, nanosecond speed, long data retention, and low power consumption. However, the commercialization of this type of memory is retarded mainly due to serious drawbacks: high cell-to-cell variability of switching parameters and limited endurance related to the ionic origin of resistive switching effect coupled with the problem of voltage overshooting. In particular, these issues complicate the examination of test samples because during the lifespan of memory cells, and the permanent reselection of test switching parameters is required. This challenge can be overcome by developing a measurement technique that combines careful testing of every single structure and the ability to test a large number of test structures. As such a technique, we propose an automated testing algorithm that automatically avoids voltage overshooting and provides an effective way of characterization of cell-to-cell and cycle-to-cycle variability. It includes all stages of ReRAM cell operation, specifically electroforming, dc switching, and endurance testing in the pulsed mode. The developed technique allows on-the-fly restoring of the memory window in case of its degradation, making it possible to better understand the potential of the material stacks of the memory cell.

New Schemes for Self-Testing RAM

An Effective Test Method for Block RAMs in Heterogeneous FPGAs Based on a Novel Partial Bitstream Relocation Technique

Design and Test of the In-Array Build-In Self-Test Scheme for the Embedded RRAM Array

ATPG for Digital Circuits with Memory Chips

Circuit Modeling for RRAM-Based Neuromorphic Chip Crossbar Array with and Without Write-Verify Scheme.

An on-line BIST RAM architecture with self-repair capabilities

Experimental Demonstration of Non-Stateful In-Memory Logic with 1T1R OxRAM Valence Change Mechanism Memristors

An Efficient Functional Test for the Massively-Parallel C·RAM Logic-Enhanced Memory Architecture

Automated Testing Algorithm for the Improvement of 1T1R ReRAM Endurance

A built-in self-repair design for RAMs with 2-D redundancy

RRAM-Based Hardware Security Primitives

A Novel Test Methodology For Design Of An Embedded Synchronous Dual-Read/Write Port Sram With Configurable Capacity

Application of Resistive Random Access Memory in Hardware Security: A Review

Progress in Development of Resistive RAM Peripheral Circuit

An In-Array Build-In Self-Test Scheme for Embedded SRAM Array

Sneak-path Based Test and Diagnosis for 1R RRAM Crossbar Using Voltage Bias Technique

An Efficient Transparent Test Scheme for Embedded Word-Oriented Memories

Open-Source Memory Compiler for Automatic RRAM Generation and Verification

Bist Approach for Testing Embedded Memory Blocks in System-On-Chips

A novel PUF against machine learning attack: Implementation on a 16 Mb RRAM chip

A Highly Reliable RRAM Physically Unclonable Function Utilizing Post-Process Randomness Source