Design of a Ka-Band Single-Chip Front-End based on a 100 nm GaN-on-Si technology

P. Longhi,F. Costanzo,W. Ciccognani,L. Pace,A. Suriani,R. Leblanc,S. Colangeli,E. Limiti
DOI: https://doi.org/10.1109/INMMiC46721.2020.9160306
2020-07-01
Abstract:In this paper, a Single-Chip Front-End (SCFE) operating in Ka-Band (35–36.5 GHz) is presented. Chip is designed exploiting a GaN-on-Si technology featured by 100nm gate length provided by OMMIC foundry. This MMIC integrates high-power, low-noise amplification functionalities enabled by a couple of synchronous Single-Pole Double-Throw (SPDT) switches, occupying a total surface of 4.7×3 mm2. Transmit-mode (Tx) performance present a 36 dBm output power, a Power Added Efficiency (PAE) higher than 25% and a 20dB power gain at 2 dB compression. Regarding the receiving-mode (Rx) performance, a sub-3.2 dB Noise Figure (NF) and a linear gain just below the 32 dB level is obtained, with a I/O matching better than 20 dB, as well.
Engineering,Physics,Materials Science
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