A C-Band GaN Single Chip Front-End for SAR Applications

W. Ciccognani,G. Polli,R. Giofré,M. Feudale,A. Suriani,C. Lanzieri,S. Colangeli,A. Salvucci,E. Limiti,M. Vittori
DOI: https://doi.org/10.1109/RWS45077.2020.9050088
2020-01-01
Abstract:This paper describes the design and experimental characterization of a C-Band Gallium Nitride (GaN) Single Chip Front End (SCFE) designed for Synthetic Aperture Radar (SAR) systems. The SCFE is composed by a three stage High Power Amplifier (HPA), a Single Pole Double Throw switch (SPDT) and a three stage Low Noise Amplifier (LNA). The MMIC has been measured in both transmit and receive mode under small- and large-signal conditions showing interesting results. In particular, a small-signal gain around 35 dB with an associated noise figure of about 3.2 dB @Tamb in receive mode were achieved, whereas, in transmit mode, 46 dBm of output power and 30% of power added efficiency were obtained at the antenna port reference plane. The chip is optimized to work in the 5.25-5.57 GHz operating band and occupies an area of 7x7 mm2.
Computer Science,Engineering,Physics,Materials Science
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