Abstract:This paper presents a highly integrated C-band RF transceiver front-end design consisting of two Single Pole Double Throw (SPDT) transmit/receive (T/R) switches, a Low Noise Amplifier (LNA), and a Power Amplifier (PA) for Ultra-Wideband (UWB) positioning system applications. When fabricated using a 0.25 μm GaAs pseudomorphic high electron mobility transistor (pHEMT) process, the switch is optimized for system isolation and stability using inductive resonance techniques. The transceiver front-end achieves overall bandwidth expansion as well as the flat noise in receive mode using the bandwidth expansion technique. The results show that the front-end modules (FEM) have a typical gain of 22 dB in transmit mode, 18 dB in receive mode, and 2 dB noise in the 4.5–8 GHz band, with a chip area of 1.56 × 1.46 mm2. Based on the available literature, it is known that the proposed circuit is the most highly integrated C-band RF transceiver front-end design for UWB applications in the same process.

What problem does this paper attempt to address?

The paper aims to address the design issues of the radio frequency (RF) transceiver front-end in ultra-wideband (UWB) positioning systems. Specifically, the research objective is to achieve a highly integrated and low-cost RF transceiver front-end design within the C-band (4.5–8 GHz). The design needs to meet the following requirements: 1. **High Isolation**: Ensure good isolation performance between transmit and receive modes to avoid signal crosstalk, thereby ensuring system stability and accuracy. 2. **Wideband Extension**: Achieve flat noise in receive mode through bandwidth extension technology, improving the sensitivity and dynamic range of the receive path. 3. **High Performance and Integration**: While ensuring performance, optimize the circuit's integration area and cost, so that the entire front-end module has characteristics such as high gain and low noise while being miniaturized. To achieve these goals, the paper proposes a design scheme based on a 0.25-micron Gallium Arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) process. This scheme includes two single-pole double-throw (SPDT) switches, a low noise amplifier (LNA), and a power amplifier (PA). By introducing inductive resonance matching technology and bandwidth extension technology, the design not only achieves good isolation but also improves overall bandwidth and flat noise performance. Additionally, the design uses a relatively negative voltage technology to control switch switching, avoiding the introduction of additional CMOS control circuits, further enhancing integration. Ultimately, the front-end module performs excellently in the 4.5–8 GHz range, with typical gains of 18 dB (receive mode) and 22 dB (transmit mode), and a noise figure of 2 dB. Compared to similar modules, this design has higher integration and gain.

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