A Single-in-differential-out CMOS RF Front-End for UWB 6–9ghz Applications

Feng Zhou,Wei Li,Ting Gao,Fei Lan,Ning Li,Junyan Ren
DOI: https://doi.org/10.1109/icsict.2010.5667400
2010-01-01
Abstract:An integrated ultra-wideband CMOS RF front-end for UWB 6-9 GHz application is presented in this paper. A single-in-differential-out gain controllable low noise amplifier and a current-reuse bleeding IQ merged quadrature mixer are integrated as the RF front-end. This ESD protected module is implemented in TSMC 0.13μm RF CMOS process and the post-layout simulation results shows that it achieves a high voltage gain of 23.7-25.1dB and a low voltage gain of 10-12.4dB, an averaged total noise figure of 4.6-5.1dB while operating in the high gain mode and an in-band IIP3 of -6.7dBm while the low gain mode. This RF front-end consumes 22.4mA from a 1.2V supply voltage.
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