A Low Power 35 Ghz Cmos Uwb Receiver Front-End

Weinan Li,Yumei Huang,Zhiliang Hong
DOI: https://doi.org/10.1088/1674-4926/30/3/035005
2009-01-01
Journal of Semiconductors
Abstract:A novel low power RF receiver front-end for 35 GHz UWB is presented. Designed in the 0.13 mu m CMOS process, the direct conversion receiver features a wideband balun-coupled noise cancelling transconductance input stage, followed by quadrature passive mixers and transimpedance loading amplifiers. Measurement results show that the receiver achieves an input return loss below -8.5 dB across the 3.14.7 GHz frequency range, maximum voltage conversion gain of 27 dB, minimum noise figure of 4 dB, IIP3 of -11.5 dBm, and IIP2 of 33 dBm. Working under 1.2 V supply voltage, the receiver consumes total current of 18 mA including 10 mA by on-chip quadrature LO signal generation and buffer circuits. The chip area with pads is 1.1 x 1.5 mm(2).
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